Fuji Electric Co., Ltd.

Fuji Electronic Co., Ltd.

Toshifusa Yamada

Shin Soyano

Tomio Shimizu

Takao Nagasawa

Rikihiro Maruyama

Seiki Igarashi

Hiroshi Hikita

Manabu Watanabe

Takatoshi Kobayashi

Akira Nakahira

Hiroaki Matsushita

Etsuo Arai

A power module is basically formed of a circuit block, a resin casing surrounding the circuit block, and circuit terminals. The circuit block has a metal base, an insulative substrate disposed on the metal base, and a plurality of circuit parts mounted on the insulative substrate. The resin casing is connected to a periphery of the metal base. The circuit terminals have terminal frames at least partly molded in the resin casing. At least one of the terminal frames has an insertion hole therein to receive an insert pin of a mold. Thus, one of the terminal frames is held in position in the mold by the insert pin of the mold during molding. The power module has an improved terminal wiring structure which stabilizes the quality and improves the reliability of the integral resin casing incorporated with the terminals inserted to the resin casing by insert-molding.

Power module

A semiconductor module includes a ceramic substrate for mounting plural semiconductor chips. Even if cracks and cleavages are formed in the ceramic substrate, further damages, such as lowering dielectric or insulation strength is prevented. The semiconductor module includes IGBTs arranged on one ceramic substrate soldered to a metal base plate, and the upper surface of the ceramic substrate is divided into zones. On each zone, a copper foil with one IGBT is mounted. A snap line is formed between the zones to localize the cracks and cleavages formed by bending stress to the snap line. The copper foils on the zones are connected to each other by a conductor bridge disposed over the snap line.

Semiconductor module with snap line

Hybrid integrated circuit for electric power control

In packaged bridge circuit modules with power switching transistors such as IGBT's, internal wiring inductance can cause switching voltage spikes and imbalance between switching transistors. Upon inclusion of suitably arranged and configured inductance elements, internal wiring inductance can produce a counter-electromotive force during switching. To this end, an internal connecting terminal may branch from an output terminal, a bridge-shaped internal connecting terminal may be connected between an emitter circuit pattern of one power transistor and a collector circuit pattern of another power transistor, or signal terminals as auxiliary emitter terminals of two power transistors may be connected to an inductance providing region in a current path of an emitter circuit pattern.

Power transistor module wiring structure

Semi-conductor element with terminal casing

A sealed semiconductor device, comprising at least one semiconductor chip, a wiring circuit board having the at least one semiconductor chip disposed thereon, at least one inner wire connecting the semiconductor chip to the wiring circuit board, a base board having the wiring circuit board disposed thereon, the base board enclosed on all sides forming a case, a silicon gel layer partially filling the case, a sealing resin layer disposed within the case above the silicon gel layer, a resin block in contact with the sealing resin layer, at least one inner terminal portion electrically connected to the wiring circuit board, at least one intermediate protruding portion electrically connected to, and projecting upwardly from, the at least one inner terminal portion, at least one aperture through the at least one intermediate protruding portion, the at least one aperture substantially disposed along a direction of a current passing through the at least one intermediate protruding portion within the case, and an outer terminal portion electrically connected to the at least one intermediate protruding portion is disclosed.

Sealed semiconductor device with protruding portion

A semiconductor device includes a housing, a semiconductor element disposed in a lower section inside the housing, an external lead terminal at least partially disposed within the housing, a gelled filler disposed within the housing, the semiconductor element and at least a portion of the external lead terminal being embedded in the gelled filler, a hardened sealing resin layer disposed over the gelled filler, and at least one internal pressure absorbing chamber having a pocket-type sealed space, the internal pressure absorbing chamber passing through the sealing resin layer and being open at an upper surface side of the gelled filler. The semiconductor device prevents a rise in the internal pressure of the housing in response to thermal expansion of the gelled filler sealed within the housing, and the absorption of external moisture by the gelled filler. When the gelled filler expands according to a heat cycle, its increase in volume is absorbed by the internal pressure absorbing chamber to prevent leakage of the gelled filler and the application of stress to the semiconductor element. The absorption of moisture from the air outside of the semiconductor device by the gelled filler is prevented by defining the internal pressure absorbing chamber as a tightly closed pocket-type space to ensure that the semiconductor device is intrinsically resistant to humidity.

Semiconductor device having housing with a gelled filler and an internal

A semiconductor device is provided with a base plate on which a circuit board is disposed. A plurality of semiconductor elements such as diodes or transistors are supported on the circuit board and interconnected by circuit wiring. A container for the device includes side walls extending upwardly from the base plate and a top cover extending between the walls. An external terminal connection is provided by an internal terminal and an external terminal that are connected by a flexible wire within the container. The internal terminal has its lower end soldered to the circuit wiring at a predetermined location and its upper end disposed in a seat in the top cover. An upwardly extending slit within the seat receives the end of the internal terminal and a transverse window opens to the slit to receive a transverse protrusion from the upper terminal end. The external terminal extends through the cover with its lower end extending inwardly of the cover where the flexible wire is connected to it.

Growing community of inventors

Kanagawa, Japan

Toshifusa Yamada