Kioxia Corporation

Ebara Corporation

Adv Antest Corporation

Stanley Electric Co., Ltd

Toshiba Memory Corporation

Suncall Corporation

Other

Toshifumi Watanabe

Naofumi Abiko

Yoichi Nakagawa

Suguru Ozawa

Masahiro Ishida

Takahiro Yamaguchi

Yuji Araki

Mani Soma

Akio Sugahara

Masahiro Yoshihara

Akihiro Imamoto

Mamoru Yuasa

Mami Kakoi

Kohei Masuda

Tetsuji Togawa

Atsushi Yoshida

Yasuo Furukawa

Kenro Kubota

Shouichi Ozaki

Fumiya Watanabe

Masaya Nakagawa

Kazuhiko Satou

Shojiro Wakabayashi

Tao Xu

Atsuko Saeki

Harumi Abe

Ryota Tsuchiya

Masayuki Nakanishi

Takeshi Hioka

Satoru Yamamoto

Mario Sako

Kenji Kodera

Teppei Higashitsuji

Kaori Tachibana

Risa Kimura

Yuichi Miyaji

Shigeo Fujisawa

Kazuyoshi Taniguchi

Iwao Shoji

Akihiko Ando

Yu Machida

A semiconductor memory includes a memory cell, a bit line electrically connected to the memory cell, a sense amplifier including a first latch circuit, a first hookup circuit, a second latch circuit, a first wiring, and a first pre-charge circuit. The sense amplifier is in a first circuit area. The first hookup circuit is in a second circuit area and configured to control connection between the bit line and the sense amplifier. The first wiring is connected between the first latch circuit and the second latch circuit. The first pre-charge circuit includes a first transistor in a third circuit area between the first circuit area and the second circuit area. The first transistor has a first end connected to the first wiring at a first position in the third circuit area and a second end connectable to a terminal supplied with one of a pre-charge voltage and a ground voltage.

Semiconductor memory

A semiconductor memory device includes an output pin configured for connection with a memory controller, an output circuit configured to output through the output pin a voltage signal that changes over time in accordance with one or more bits of data to be output to the memory controller, and a control circuit configured to temporarily change a drive capability of the output circuit each time a voltage signal corresponding to one bit of the data is output through the output pin.

Semiconductor memory device having a control circuit for changing a drive capability of an output circuit of the semiconductor memory device

A gas solution supply deviceincludes: a first gas-liquid separatorin which gas solution is stored; a second gas-liquid separatorprovided at a stage subsequent to the first gas-liquid separatorand in which gas solution to be supplied to a use point is stored; an intermediate lineprovided between the first gas-liquid separatorand the second gas-liquid separator; a pressure booster pumpprovided on the intermediate lineand increases a pressure of gas solution being supplied from the first gas-liquid separatorto the second gas-liquid separator; a gas supply linethat supplies gas as a material of the gas solution; and a gas dissolving unitprovided on the intermediate lineand dissolves the gas supplied from the gas supply linein the gas solution supplied from the first gas-liquid separator

Gas solution supply device

A semiconductor memory device includes a memory cell, a word line connected to the memory cell, a source line connected to the memory cell, a bit line connected to the memory cell, and a control circuit configured to perform a read operation on the memory cell. During the read operation, the control circuit applies to the word line a first voltage, a second voltage greater than the first voltage after applying the first voltage, and a third voltage greater than the first voltage and smaller than the second voltage after applying the second voltage, and applies to the source line a fourth voltage according to a timing at which the second voltage is applied to the word line, a fifth voltage smaller than the fourth voltage after applying the fourth voltage, and a sixth voltage greater than the fifth voltage after applying the fifth voltage.

Nonvolatile semiconductor memory device

A semiconductor memory device according to an embodiment includes a plurality of planes each including a plurality of blocks each including a memory cell, an input/output circuit configured to receive a command set from an external controller, and a sequencer configured to execute an operation in response to the command set. Upon receiving a first command set that instructs execution of a first operation, the sequencer executes the first operation. Upon receiving a second command set that instructs execution of a second operation during execution of the first operation, the sequencer executes the second operation in parallel with the first operation. Upon receiving a third command set that instructs execution of a third operation during execution of the first operation, the sequencer suspends the first operation, executes the third operation, and resumes the first operation upon completion of the third operation.

Semiconductor memory device

A semiconductor device includes a first pad, a second pad, a first output driver provided for the first pad and configured to output a first transmission signal to the first pad, a second output driver provided for the second pad and configured to output a second transmission signal to the second pad, a register that stores first and second calibration values, a first reference resistor for the first pad and having a resistance value that is set according to the first calibration value, a second reference resistor for the second pad and having a resistance value that is set according to the second calibration value, a first setting circuit configured to calibrate a resistance value of the first output driver using the first reference resistor, and a second setting circuit configured to calibrate a resistance value of the second output driver using the second reference resistor.

Semiconductor device

A semiconductor memory device includes a memory cell array including a plurality of memory cells, a word line connected to the plurality of memory cells, a plurality of bit lines connected respectively to the plurality of memory cells, a sense amplifier connected to the plurality of bit lines, and a controller configured to execute a write operation in a plurality of program loops each including a program operation and a verify operation. The sense amplifier is configured to apply a first voltage, a second voltage higher than the first voltage, a third voltage higher than the second voltage, and a fourth voltage higher than the third voltage to first, second, third, and fourth bit lines of the plurality of bit lines, respectively, while a program voltage is applied to the word line in the program operation.

A semiconductor memory device according to an embodiment includes a plurality of planes including a plurality of blocks each being a set of memory cells, and a sequencer configured to execute a first operation and a second operation shorter than the first operation. Upon receiving a first command set that instructs execution of the first operation, the sequencer is configured to execute the first operation. Upon receiving a second command set that instructs execution of the second operation while the first operation is being executed, the sequencer is configured to suspend the first operation and execute the second operation or execute the second operation in parallel with the first operation, based on an address of a block that is a target of the first operation and an address of a block that is a target of the second operation.

A gas solution manufacturing deviceincludes a gas supply lineconfigured to supply a gas as a raw material of a gas solution, a liquid supply lineconfigured to supply a liquid as a raw material of the gas solution, a gas solution production unitconfigured to mix the gas and the liquid together to produce the gas solution, a gas-liquid separation unitconfigured to perform gas-liquid separation of the produced gas solution into a supplied liquid to be supplied to a use point and a discharged gas to be discharged through an exhaust port, and a gas dissolving unitprovided in the liquid supply lineand configured to dissolve the discharged gas resulting from the gas-liquid separation in the liquid. The gas dissolving unitis configured with a hollow fiber membrane configured with a gas permeable membrane.

Gas solution manufacturing device

A gas dissolved liquid manufacturing device includes: a pump configured to pressurize a liquid; a pipe communicating with the pump; a nozzle disposed in the pipe, the nozzle being configured to generate micro bubbles using a supplied gas; and a gas-liquid separation tank whose upper part communicates with the pipe, the gas-liquid separation tank being configured to separate a gas-liquid mixture generated by the nozzle into a gas and a liquid.

Gas-dissolved liquid manufacturing device

A semiconductor memory device according to an embodiment includes a plurality of planes including a plurality of blocks each being a set of memory cells, and a sequencer configured to execute a first operation, and a second operation shorter than the first operation. Upon receiving a first command set that instructs execution of the first operation, the sequencer is configured to execute the first operation. Upon receiving a second command set that instructs execution of the second operation while the first operation is being executed, the sequencer is configured to suspend the first operation and execute the second operation or execute the second operation in parallel with the first operation, based on an address of a block that is a target of the first operation and an address of a block that is a target of the second operation.

A gas dissolution supply apparatus dissolves a gas supplied from a gas supply unit in a liquid supplied from a liquid supply unit to produce a gas dissolution in a gas dissolving unit, stores the gas dissolution produced in the gas dissolving unit in a gas dissolution tank, supplies the gas dissolution from the gas dissolution tank to a point of use, measures the flow rate of a part of the gas dissolution supplied to the point of use that is returned to the gas dissolving unit, and adjusts the flow rate of the liquid supplied from the liquid supply unit to the gas dissolving unit based on the result of the measurement.

Gas dissolution supply apparatus and gas dissolution supply method

Growing community of inventors

Tokyo, Japan

Toshifumi Watanabe