Sony Corporation

Sony Semiconductor Solutions Corporation

Sony Group Corporation

Sony Corproation

Toshifumi Wakano

Yusuke Otake

Yusuke Tanaka

Nanako Kato

Keiji Mabuchi

Masahiko Nakamizo

Fumihiko Koga

Takuya Sano

Takashi Nagano

Akira Matsumoto

Tomoyuki Hirano

Ken Koseki

Kazuhiko Nakadate

Keiji Tatani

Kenji Kobayashi

Shunsuke Maruyama

Takeshi Matsunuma

Takuro Murase

Junpei Yamamoto

Kyohei Yoshimura

Ryusei Naito

Yoshiharu Kudoh

Koji Kikuchi

Atsuhiko Yamamoto

Tsutomu Imoto

Yoichi Ueda

Hirotoshi Nomura

Takuya Maruyama

Shinichi Yoshida

Ryota Watanabe

Tetsuya Uchida

Kosuke Nakanishi

Hideyuki Honda

Yuji Isogai

Kenji Azami

Akira Tanaka

Shigeyuki Baba

Hayato Iwamoto

Keiichi Nakazawa

Hirofumi Yamashita

Junichiro Fujimagari

Shinpei Yamaguchi

Shohei Shimada

Hiroki Iwashita

Hideo Harifuchi

Eiichi Tauchi

Takashi Nakashikiryo

Kazunari Matsubayashi

Atsushi Toda

Takeshi Yanagita

Kyosuke Ito

Yuko Ohgishi

Motonobu Torii

Shinichiro Yagi

Hironori Hoshi

Torii Motonobu

Hoshi Hironori

Kikuchi Koji

A solid-state imaging element of a pixel sharing type with improved driving of transistors is disclosed. A first electric charge accumulating section and a second electric charge accumulating section are arranged in a predetermined direction. A first transfer section transfers electric charge from first photoelectric conversion elements to the first electric charge accumulating section, causing it to accumulate the electric charge. A second transfer section transfers electric charge from second photoelectric conversion elements to the second electric charge accumulating section, causing it to accumulate the electric charge. A first transistor is configured to output a signal corresponding to an amount of the electric charge accumulated in each of the first electric charge accumulating section and the second electric charge accumulating section. A second transistor is arranged with the first transistor in the predetermined direction and connected in parallel to the first transistor.

Solid-state imaging element and imaging apparatus

An imaging device includes a first chip. The first chip includes a first pixel and a second pixel. The first pixel includes a first anode region and a first cathode region, and the second pixel includes a second anode region and a second cathode region. The first chip includes a first wiring layer. The first wiring layer includes a first anode electrode, a first anode via coupled to the first anode electrode and the first anode region, and a second anode via coupled to the first anode electrode and the second anode region.

Solid-state imaging device

Distance measurement accuracy is improved. An avalanche photodiode sensor according to an embodiment includes a first semiconductor substrate and a second semiconductor substrate bonded to a first surface of the first semiconductor substrate, wherein the first semiconductor substrate includes a plurality of photoelectric conversion portions arranged in a matrix and an element separation portion, the plurality of photoelectric conversion portions include a first photoelectric conversion portion, the element separation portion has a first element separation region and a second element separation region, the first photoelectric conversion portion is arranged between the first element separation region and the second element separation region, the first semiconductor substrate further includes a plurality of concave-convex portions on a second surface opposite to the first surface and between the first element separation region and the second element separation region, and the second semiconductor substrate includes a reading circuit connected to each of the photoelectric conversion portions.

Avalanche photodiode sensor and distance measuring device including concave-convex portions for reduced reflectance

The present technology relates to a light-receiving element and a distance-measuring module for enabling improvement of characteristics. A light-receiving element includes an on-chip lens, a wiring layer, and a semiconductor layer arranged between the on-chip lens and the wiring layer, the semiconductor layer includes a first voltage application portion to which a first voltage is applied, a second voltage application portion to which a second voltage different from the first voltage is applied, a first charge detection portion arranged around the first voltage application portion, and a second charge detection portion arranged around the second voltage application portion, and the wiring layer includes at least one ground line having a wider line width than a power supply line. The present technology can be applied to, for example, a light-receiving element that generates distance information by a ToF method.

Light-receiving element and distance-measuring module

Imaging devices and electronic apparatuses with one or more shared pixel structures are provided. The shared pixel structure includes a plurality of photoelectric conversion devices or photodiodes. Each photodiode in the shared pixel structure is located within a rectangular area. The shared pixel structure also includes a plurality of shared transistors. The shared transistors in the shared pixel structure are located adjacent the photoelectric conversion devices of the shared pixel structure. The rectangular area can have two short sides and two long sides, with the shared transistors located along one of the long sides. In addition, a length of one or more of the transistors can be extended in a direction parallel to the long side of the rectangular area.

Imaging device and electronic apparatus

The present disclosure relates to a solid-state imaging element and an electronic device capable of increasing the capacitance of a charge holding unit. The solid-state imaging element includes a pixel including a photodiode, an FD that accumulates charges generated in the photodiode, and a charge holding unit that is connected in parallel with the FD. The charge holding unit includes a wiring capacitance formed by parallel running of a first wiring connected to a first potential and a second wiring connected to a second potential different from the first potential. The present disclosure can be applied to a solid-state imaging element that performs global shutter type imaging.

Solid-state imaging element and electronic device

A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode and a cathode. The cathode is in a well region of the first substrate. The first pixel includes an isolation region that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.

Photodetector

The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.

Solid-state imaging element, method for manufacturing the same, and electronic apparatus

Provided is a solid-state imaging device and an electronic apparatus capable of achieving both of a high dynamic range operation and an auto focus operation in a pixel configuration in which a plurality of unit pixels includes two or more subpixels. The solid-state imaging device includes a first pixel separation region that separates a plurality of unit pixels including two or more subpixels, a second pixel separation region that separates each of the plurality of unit pixels separated by the first pixel separation region and an overflow region that causes signal charges accumulated in the subpixels to overflow to at least one of adjacent subpixels, in which the overflow region is formed between a first subpixel and a second subpixel.

Solid-state imaging device and electronic apparatus

There is provided a solid-state image-capturing element capable of reducing the capacitance by using a hollow region. At least a part of a region between an FD wiring connected to a floating diffusion and a wiring other than the FD wiring is a hollow region. The present disclosure can be applied to a CMOS image sensor having, for example, a floating diffusion, a transfer transistor, an amplifying transistor, a selection transistor, a reset transistor, and a photodiode.

Solid-state image-capturing element having floation diffusion and hollow regions

The present disclosure relates to an image pickup device that enables inhibition of occurrence of color mixture or noise, and an electronic apparatus. The image pickup device of the present disclosure includes an image plane phase difference detection pixel for obtaining a phase difference signal for image plane phase difference AF. The image plane phase difference detection pixel includes: a first photoelectric conversion section that generates an electric charge in response to incident light; an upper electrode section that is one of electrodes disposed facing each other across the first photoelectric conversion section, the upper electrode section being formed on an incident side of the incident light on the first photoelectric conversion section; and a lower electrode section that is another of the electrodes disposed facing each other across the first photoelectric conversion section, the lower electrode section being formed on an opposite side of the incident side of the incident light on the first photoelectric conversion section, the lower electrode section being multiple-divided at a position that avoids a center of the incident light. The present disclosure is applicable to image sensors.

Image pickup device and electronic apparatus with an image plane phase difference detection pixel

To improve accuracy of distance measurement using a Z pixel having the same size as size of a visible light pixel. In a solid-state imaging apparatus, a visible light converting block includes a plurality of visible light converting units in which light receiving faces for receiving visible light are disposed and configured to generate electric charges in accordance with a light receiving amount of the received visible light, and a visible light electric charge holding unit configured to exclusively hold the electric charges respectively generated by the plurality of visible light converting units in periods different from each other. An infrared light converting block includes a plurality of infrared light converting units in which light receiving faces which have substantially the same size as size of the light receiving faces of the visible light converting units and which receive infrared light are disposed and configured to generate electric charges in accordance with a light receiving amount of the received infrared light, and an infrared light electric charge holding unit configured to collectively and simultaneously hold the electric charges respectively generated by the plurality of infrared light converting units.

Solid-state imaging apparatus, imaging system, and distance measurement methods

The present technology relates to a light detecting element and a method of manufacturing the same that make it possible to reduce pixel size. The light detecting element includes a plurality of pixels arranged in the form of a matrix. Each of the pixels includes a first semiconductor layer of a first conductivity type formed in an outer peripheral portion in the vicinity of a pixel boundary, and a second semiconductor layer of a second conductivity type opposite from the first conductivity type formed on the inside of the first semiconductor layer as viewed in plan. A high field region formed by the first semiconductor layer and the second semiconductor layer when a reverse bias voltage is applied is configured to be formed in a depth direction of a substrate. The present technology is, for example, applicable to a photon counter or the like.

Light detecting element and method of manufacturing same

Growing community of inventors

Kanagawa, Japan

Toshifumi Wakano