Kabushiki Kaisha Toshiba

Kioxia Corporation

Samsung Electronics Co., Ltd.

Toshiba Memory Corporation

Toshifumi Hashimoto

Noboru Shibata

Hiroshi Maejima

Weihan Wang

Shigenori Hato

Hitoshi Minai

Takashi Maeda

Takuya Futatsuyama

Koji Kato

Masumi Saitoh

Tetsuaki Utsumi

Sanad Bushnaq

Tomoki Nakagawa

Takashi Ando

Fumitaka Arai

Tsuneo Inaba

Toshiki Hisada

Takeshi Nakano

Jumpei Sato

Yuji Aoshima

Yusuke Umezawa

Susumu Kikuchi

Ryo Aoki

A semiconductor memory device includes a substrate, a plurality of first conductive layers, a second conductive layer disposed at a position farther from or a position closer to the substrate than the plurality of first conductive layers, a first semiconductor column, a first electric charge accumulating film, a first wiring disposed at a position farther from or a position closer to the substrate than the plurality of first conductive layers and the second conductive layer, a first contact that is disposed between one end of the second conductive layer and the first semiconductor column and is electrically connected to the second conductive layer and the first wiring, and a second contact that is disposed between another end of the second conductive layer and the first semiconductor column and is electrically connected to the second conductive layer and the first wiring.

Semiconductor memory device that includes a semiconductor column that penetrates a plurality of conductive layers

The present disclosure relates to a clothes dryer. The clothes dryer includes a drum configured to accommodate and dry clothes, and a lint removal device configured to remove lint in air flowing out of the drum. The lint removal device includes a filter part configured such that the lint is adhered thereto, and a screw rotatably disposed at an inner side of the filter part to push out the lint adhered to the filter part. The screw includes a shaft, and a blade extending from the shaft and having a helical shape, and the blade has elasticity to remove foreign substances introduced into the lint removal device without damage to the filter part.

Clothes dryer

A first conductor extends along first and second axes. A first memory pillar is provided in the first conductor and includes a first semiconductor and a charge accumulation layer. A second conductor extends along the second axis and is in contact with the first memory pillar. A third conductor extends along the first and second axes and is arranged with a distance from the first conductor along the second axis. A second memory pillar is provided in the third conductor and includes a second semiconductor and a charge accumulation layer. The fourth conductor extends along the second axis and is in contact with the second memory pillar. The fifth conductor extends along the second axis and is coupled to the first and second memory pillars.

Memory device with memory pillar inside conductor

A semiconductor memory device includes a plurality of memory cells, a word line connected to gates of the memory cells, a bit line electrically connected to one ends of the memory cells through a plurality of select gate transistors, respectively, the select gate transistors including two outer select gate transistors and one or more inner select gate transistors between the two outer select gate transistors, two outer select gate lines connected to gates of the two outer select gate transistors, respectively, one or more inner select gate lines connected to gates of the one or more inner select gate transistors, respectively, and a voltage generation circuit configured to independently control supply of voltages to the outer select gate lines and the inner select gate lines during an operation to read data stored in the memory cells.

Semiconductor memory device

A semiconductor memory device includes a memory chip. The memory chip includes a first region including a plurality of first memory cells and second memory cells, a second region different from the first region, a plurality of first word lines stacked apart from each other in a first direction in the first and second regions, a first pillar including a first semiconductor layer extending through the first word lines, and a first insulator layer provided between the first semiconductor layer and the first word lines, in the first region, the first memory cells being located at intersections of the first pillar with the first word lines, a first bonding pad in the second region, and a first transistor between the first word lines and the first bonding pad, and connected between one of the first word lines and the first bonding pad, in the second region.

Semiconductor memory device having transistors between bonding pads and word lines

A semiconductor memory device is provided that includes a plurality of memory blocks, arranged in a second direction, that are spaced from a semiconductor substrate in a first direction intersecting with a surface of the semiconductor substrate; a first wiring that is farther from the semiconductor substrate than the plurality of memory blocks in the first direction; a second wiring that is closer to the semiconductor substrate than the plurality of memory blocks in the first direction; a first contact; a first transistor with a first active region disposed in the semiconductor substrate, the second wiring being electrically connected to a first memory block among the plurality of memory blocks via the first transistor; and a second transistor where the second wiring being electrically connected to a second memory block among the plurality of memory blocks via the second transistor.

Semiconductor memory device including a memory chip and a circuit chip bonded to the memory chip

The present disclosure relates to a clothes dryer capable of reducing pressure loss of air due to a lint removal device. The clothes dryer includes a case, a drum rotatably supported inside the case, an air supply port configured to guide air into the drum, an exhaust port configured to guide air inside the drum to the outside of the drum, an exhaust duct configured to guide air passed through the exhaust port to the air supply port, a connecting duct connecting the exhaust port and the exhaust duct, and a lint removal device configured to remove lint in the air passed through the exhaust port, wherein the lint removal device is disposed inside the exhaust duct and configured to communicate with the connecting duct.

Dryer

A clothes dryer comprises a drum to stir clothes accommodated therein, an exhaust duct configured to discharge air inside the drum, a lint removing device including a filter to remove lint in air discharged to the exhaust duct, and a foreign-substance separating plate installed between the exhaust duct and the lint removing device to separate solid foreign substances in the air discharged to the exhaust duct.

According to one embodiment, a memory system includes: a semiconductor memory including a memory cell array, the memory cell array including a memory cell, and a controller configured to issue a first read command sequence after a lapse of a first time period from access to the semiconductor memory, and issue a second read command sequence after a lapse of a second time period from access to the semiconductor memory. When the controller issues the first read command sequence, the semiconductor memory applies a first voltage and a second voltage to the memory cell. When the controller issues the second read command sequence, the semiconductor memory applies a third voltage and a fourth voltage to the memory cell.

Memory system

A semiconductor memory device includes a first memory transistor, a first wiring connected to a gate electrode of the first memory transistor, a connection transistor connected to the first wiring, and a second wiring connected to the connection transistor. In a first write operation for the first memory transistor, during a first time period, a voltage of the first wiring increases to a first voltage and a voltage of the second wiring increases to a second voltage larger than the first voltage, and during a second time period directly after the first time period and directly after the connection transistor is turned ON, the voltage of the first wiring increases to a third voltage larger than the first voltage and smaller than the second voltage, and the voltage of the second wiring decreases to a fourth voltage larger than the first voltage and smaller than the second voltage.

Semiconductor memory device in which a conductive line connected to a word line selected for programming is charged to a voltage larger than the program voltage

A semiconductor storage device comprises a memory block including first and second memory cells, first and second word lines electrically connected to the first and second memory cells, respectively, first and second booster circuits, and a control circuit. During a read operation in which the first word line is a selected word line, the control circuit controls the first booster circuit to start boosting the output voltage thereof before a target block address associated with the read command is determined, causes the output voltage of the first booster circuit to be supplied to the first and second word lines, controls the second booster circuit to start boosting the output voltage thereof, and causes the output voltage of the second booster circuit, instead of the output voltage of the first booster circuit, to be supplied to the first word line.

Semiconductor storage device

A semiconductor memory device includes a first memory cell array including a first memory cell that is capable of holding two or more bits of data including at least a first bit and a second bit, a second memory cell array including a second memory cell that is capable of holding two or more bits of data including at least a first bit and a second bit, a first word line electrically connected to a gate of the first memory cell, and a second word line electrically connected to a gate of the second memory cell. In a read operation, at least first, second, and third voltages are applied successively to both the first word line and the second word line to read a first page including the first bit of the first memory cell and a second page including the second bit of the second memory cell.

Growing community of inventors

Yokohama, Japan

Toshifumi Hashimoto