Kioxia Corporation

Toshiaki Yanase

Kazuhiro Matsuo

Shinji Mori

Keiichi Sawa

Atsushi Takahashi

Yuta Saito

Hiroyuki Yamashita

In one embodiment, a semiconductor storage device includes a stacked body in which a plurality of conducting layers are stacked through a plurality of insulating layers in a first direction, a semiconductor layer penetrating the stacked body, extending in the first direction and including metal atoms, and a memory film including a first insulator, a charge storage layer and a second insulator that are provided between the stacked body and the semiconductor layer. The semiconductor layer surrounds a third insulator penetrating the stacked body and extending in the first direction, and at least one crystal grain in the semiconductor layer has a shape surrounding the third insulator.

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Yokkaichi Mie, Japan

Toshiaki Yanase