Sony Semiconductor Solutions Corporation

Toshiaki Ono

Yoshiaki Kitano

Masahiko Nakamizo

Tomohiko Asatsuma

Tomonori Yamashita

Satoko Iida

Takeyoshi Komoto

Masaki Sakakibara

Yorito Sakano

Yusuke Matsumura

Ryoko Kajikawa

Kengo Nagata

A image pickup apparatus that includes a photoelectric conversion unit that performs photoelectric conversion, a first capacitor and a second capacitor that hold a signal from the photoelectric conversion unit, and an initialization switch that initializes the second capacitor, in which one end of the first capacitor, one end of the second capacitor, and an amplification unit that amplifies a signal from the photoelectric conversion unit are connected, another end of the second capacitor and one end of the initialization switch are connected, and another end of the first capacitor and another end of the initialization switch are connected to a voltage source.

Image pickup apparatus

Solid-state imaging devices are disclosed. In one example, a solid-state imaging device includes a pixel array with unit pixels that accumulate charge in a floating diffusion (FD) region. A pixel signal reading circuit reads a pixel signal based on the charge from the FD region of a unit pixel. The pixel signal reading circuit includes an AD converter that performs AD conversion on the pixel signal, and a determination circuit that performs brightness/darkness determination of light received by the unit pixel on the basis of the pixel signal. The determination circuit selectively controls executing or stopping of the AD conversion on a pixel signal to be subsequently read according to a result of the brightness/darkness determination.

Solid-state imaging device and control method of the same

A solid-state imaging device according to an embodiment of the present disclosure includes a stacked photoelectric converter for each of pixels. The stacked photoelectric converter has a plurality of photoelectric conversion elements stacked therein. The plurality of photoelectric conversion elements each has different wavelength selectivity. This solid-state imaging device further includes a plurality of data output lines from which pixel signals based on electric charges outputted from the photoelectric conversion elements are outputted. A plurality of data output lines is provided for each predetermined unit pixel column. The plurality of the data output lines is equal in number to an integer multiple of the photoelectric conversion elements stacked in the stacked photoelectric converter.

Solid-state imaging device

An imaging device of an embodiment has a first substrate, a second substrate, a wire, and a trench. The first substrate has a pixel having a photodiode and a floating diffusion that holds a charge converted by the photodiode. The second substrate has a pixel circuit that reads a pixel signal based on the charge held in the floating diffusion in the pixel, and is stacked on the first substrate. The wire penetrates the first substrate and the second substrate in a stacking direction, and electrically connects the floating diffusion in the first substrate to an amplification transistor in the pixel circuit of the second substrate. The trench is formed at least in the second substrate, runs in parallel with the wire, and has a depth equal to or greater than the thickness of a semiconductor layer in the second substrate.

Imaging device

A solid-state image sensor includes a plurality of imaging device blocks each including P×Q imaging devices. In an imaging device block, first charge movement controlling electrodes are provided between the imaging devices, and second charge movement controlling electrodes are provided between the imaging device blocks. In the imaging device block, P imaging devices are arrayed along a first direction, and Q imaging devices are arrayed along a second direction. Charge accumulated in a photoelectric conversion layer of the (P−1)th imaging device from the first imaging device along the first direction is transferred to the photoelectric conversion layer of the Pth imaging device and read out together with charge accumulated in the photoelectric conversion layers of the Q Pth imaging devices, under the control of the first charge movement controlling electrodes.

Solid-state image sensor with imaging device blocks that each include imaging devices

A solid-state imaging element which detects visible light and ultraviolet light in one pixel provides improved resolution. First and second photoelectric conversion elements each perform photoelectric conversion of incident light. A first accumulation part accumulates electric charges that are photoelectrically converted by the first photoelectric conversion element second accumulation part is disposed on one face of a substrate and accumulates electric charges that are photoelectrically converted by the second photoelectric conversion element. A connection part is connected to the second accumulation part and transfers the electric charges accumulated in the second accumulation part to another face of the substrate.

Solid-state imaging element and electronic device

Provided is a solid-state imaging element configured to automatically extend dynamic range for each unit pixel. A solid-state imaging element includes, for a unit pixel, a first photoelectric conversion element, a first accumulation portion that accumulates electric charge obtained by photoelectric conversion by the first photoelectric conversion element, and a first film that is electrically connected to the first accumulation portion and has an optical characteristic changing according to applied voltage. Furthermore, the unit pixel of the solid-state imaging element can further include a first transfer transistor that transfers electric charge obtained by photoelectric conversion by the photoelectric conversion element to the first accumulation portion, an amplification transistor that is electrically connected to the first accumulation portion, and a selection transistor that is electrically connected to the amplification transistor.

Growing community of inventors

Kanagawa, Japan

Toshiaki Ono