Sumco Corporation

Canon Kabushiki Kaisha

Sumitomo Mitsubishi Silicon Corporation

Sumitomo Metal Industries, Inc.

Toshiaki Ono

Masataka Hourai

Wataru Sugimura

Hidekazu Takahashi

Kazuhisa Torigoe

Tadami Tanaka

Jun Fujise

Shigeru Umeno

Eiichi Asayama

Yumi Hoshino

Yuichiro Yamashita

Tetsuya Itano

Masatsugu Itahashi

Yu Maehashi

Yasuo Koike

Hideshi Nishikawa

Naoki Inatani

Masahiro Kobayashi

Toru Koizumi

Wataru Ito

Takashi Moriyama

Kazuaki Tashiro

Hideaki Takada

Tatsuhito Goden

Tomoyuki Noda

Satoshi Kato

Yukio Araoka

Bong-Gyun Ko

Shunya Kawaguchi

Takashi Matsuda

Hiroki Hiyama

Koji Matsumoto

Ken Nakajima

Akihiko Endo

Masataka Horai

Tomokazu Katano

Toshiyuki Fujiwara

Hidetoshi Hayashi

Tatsuhiko Yamazaki

Shinichiro Shimizu

Takayuki Kubo

Hiroshi Amano

Takayuki Kihara

Yoshio Honda

Ryusuke Yokoyama

Naoki Ikeda

Kentaro Tsukida

Akira Higuchi

Kazumichi Morita

Kazuya Kodani

A silicon wafer having a layer of oxygen precipitates and method of manufacturing thereof wherein the wafer exhibiting robustness characterized as having a ratio of a first average density from a first treatment that to a second average density from a second treatment is between 0.74 to 1.02, wherein the first treatment includes heating the wafer or a portion of the wafer at about 1150° C. for about 2 minutes and then between about 950 to 1000° C. for about 16 hours, and the second treatment includes heating the wafer or a portion of the wafer at about 780° C. for about 3 hours and then between about 950 to 1000° C. for about 16 hours. The wafer exhibits heretofore unattainable uniformity wherein a ratio of an oxygen precipitate density determined from any one cubic centimeter in the BMD layer of the wafer to another oxygen precipitate density from any other one cubic centimeter in the BMD layer of the wafer is in a range of 0.77 to 1.30.

Silicon wafer and manufacturing method of the same

A method of reducing warp imparted to a silicon wafer having a (110) plane orientation and a <111> notch orientation by anisotropic film stress of a multilayer film that is to be formed on a surface of the silicon wafer, that includes forming the multilayer film on a surface of the silicon wafer in an orientation so that a direction in which the warp of the wafer will be greatest coincides with a direction in which Young's modulus of a crystal orientation of the silicon wafer is greatest. Also, a method of reducing warp imparted to a silicon wafer having a (111) plane orientation by isotropic film stress of a multilayer film to be formed on a surface of the silicon wafer, that includes, prior to forming the multilayer film, causing the silicon wafer to have an oxygen concentration of 8.0×10atoms/cmor more (ASTM F-121, 1979).

Method of reducing wrap imparted to silicon wafer by semiconductor layers

A manufacturing method of an epitaxial silicon wafer includes forming an epitaxial film made of silicon on a surface of a silicon wafer in a trichlorosilane gas atmosphere; and setting the nitrogen concentration of the surface of the epitaxial film through inward diffusion from a nitride film on the epitaxial film, the nitride film being formed by subjecting the silicon wafer provided with the epitaxial film to heat treatment in a nitrogen atmosphere.

Method for setting a nitrogen concentration of a silicon epitaxial film in manufacturing an epitaxial silicon wafer

A convection pattern estimation method of a silicon melt includes: applying a horizontal magnetic field of 0.2 tesla or more to a silicon melt in a rotating quartz crucible with use of a pair of magnetic bodies disposed across the quartz crucible; before a seed crystal is dipped into the silicon melt to which the horizontal magnetic field is applied; measuring temperatures at a first and second measurement points positioned on a first imaginary line that passes through a center of a surface of the silicon melt and is not in parallel with a central magnetic field line of the horizontal magnetic field as viewed vertically from above; and estimating a direction of a convection flow in a plane in the silicon melt orthogonal to the direction in which the horizontal magnetic field is applied on a basis of the measured temperatures of the first and second measurement points.

Method of estimating convection pattern of silicon melt, method of estimating oxygen concentration of silicon single crystal, method of manufacturing silicon single crystal, and raising device of silicon single crystal

A silicon wafer having a layer of oxygen precipitates and method of manufacturing thereof wherein the wafer exhibiting robustness characterized as having a ratio of a first average density from a first treatment that to a second average density from a second treatment is between 0.74 to 1.02, wherein the first treatment includes heating the wafer or a portion of the wafer at about 1150&#xb0; C. for about 2 minutes and then between about 950 to 1000&#xb0; C. for about 16 hours, and the second treatment includes heating the wafer or a portion of the wafer at about 780&#xb0; C. for about 3 hours and then between about 950 to 1000&#xb0; C. for about 16 hours. The wafer exhibits heretofore unattainable uniformity wherein a ratio of an oxygen precipitate density determined from any one cubic centimeter in the BMD layer of the wafer to another oxygen precipitate density from any other one cubic centimeter in the BMD layer of the wafer is in a range of 0.77 to 1.30.

At least one solid-state image pickup element includes a plurality of pixels that are arranged in a two-dimensional manner. Each of the plurality of pixels includes a plurality of photoelectric conversion units each including a pixel electrode, a photoelectric conversion layer disposed on the pixel electrode, and a counter electrode disposed such that the photoelectric conversion layer is sandwiched between the pixel electrode and the counter electrode. In one or more embodiments, each of the plurality of pixels also includes a microlens disposed on the plurality of photoelectric conversion units.

Solid-state image pickup element and image pickup system

Provided is a method of accurately predicting the thermal donor formation behavior in a silicon wafer, a method of evaluating a silicon wafer using the prediction method, and a method of producing a silicon wafer using the evaluation method. The method of predicting the formation behavior of thermal donors, includes: a first step of setting an initial oxygen concentration condition before performing heat treatment on the silicon wafer for reaction rate equations based on both a bond-dissociation model of oxygen clusters associated with the diffusion of interstitial oxygen and a bonding model of oxygen clusters associated with the diffusion of oxygen dimers; a second step of calculating the formation rate of oxygen clusters formed through the heat treatment using the reaction rate equations; and a third step of calculating the formation rate of thermal donors formed through the heat treatment based on the formation rate of the oxygen clusters.

Method of predicting thermal donor formation behavior in silicon wafer, method of evaluating silicon wafer, and method of producing silicon wafer

A silicon wafer having a BMD density of 5&#xd7;10/cmor more and 2.5&#xd7;10/cmor less in a region of 80 &#x3bc;m to 285 &#x3bc;m from the wafer surface when the silicon wafer is heat-treated at a temperature X (&#xb0; C., 700&#xb0; C.&#x2264;X&#x2264;1000&#xb0; C.) for a time Y (min) and then subjected to an infrared tomography method in which the laser power is set to 50 mW and the exposure time of a detector is set to 50 msec. The time Y and the temperature X satisfy Y=7.88&#xd7;10&#xd7;X.

Silicon wafer

Provided is a method of producing a high resistance n-type silicon single crystal ingot with small tolerance margin on resistivity in the crystal growth direction, which is suitably used in a power device. In the method of producing a silicon single crystal ingot using Sb or As as an n-type dopant, while a silicon single crystal ingot is pulled up, the amount of the n-type dopant being evaporated from a silicon melt per unit solidification ratio is kept within a target evaporation amount range per unit solidification ratio by controlling one or more pulling condition values including at least one of the pressure in a chamber, the flow volume of Ar gas, and a gap between a guide portion and the silicon melt.

Method of producing silicon single crystal ingot and silicon single crystal ingot

Provided is a silicon wafer manufacturing method capable of reducing the warpage of the wafer occurring during a device process and allowing the subsequent processes, which have been suffered from problems due to severe warping of the wafer, to be carried out without problems and its manufacturing method. A silicon wafer manufacturing method according to the present invention is provided with calculating a target thickness of the silicon wafer required for ensuring a warpage reduction amount of a silicon wafer warped during a device process from a relationship between an amount of warpage of a silicon wafer and a thickness thereof occurring due to application of the same film stress to a plurality of silicon wafers having mutually different thicknesses; and processing a silicon single crystal ingot to thereby manufacture silicon wafers having the target thickness.

Silicon wafer manufacturing method

A method of manufacturing an epitaxial silicon wafer that includes growing a silicon single crystal ingot doped with a boron concentration of 2.7&#xd7;10atoms/cmor more and 1.3&#xd7;10atoms/cmor less by the CZ method; producing a silicon substrate by processing the silicon single crystal ingot; and forming an epitaxial layer on a surface of the silicon substrate. During growing of the silicon single crystal ingot, the pull-up conditions of the silicon single crystal ingot are controlled so that the boron concentration Y (atoms/cm) and an initial oxygen concentration X (&#xd7;10atoms/cm) satisfy the expression X&#x2264;&#x2212;4.3&#xd7;10Y+16.3.

Epitaxial silicon wafer

A manufacturing method for a group III nitride semiconductor substrate is provided with a first step of forming a second group III nitride semiconductor layer on a substrate; a second step of forming a protective layer on the second group III nitride semiconductor layer; a third step of selectively forming pits on dislocation portions of the second group III nitride semiconductor layer by gas-phase etching applied to the protective layer and the second group III nitride semiconductor layer; and a fourth step of forming a third group III nitride semiconductor layer on the second group III nitride semiconductor layer and/or the remaining protective layer so as to allow the pits to remain.

Manufacturing method for group III nitride semiconductor substrate and group III nitride semiconductor substrate

A method for producing an epitaxial silicon wafer, including a preliminary thermal treatment step of subjecting a silicon wafer to thermal treatment for increasing a density of oxygen precipitates, the silicon wafer being one that has an oxygen concentration in a range of 9&#xd7;10atoms/cmto 16&#xd7;10atoms/cm, contains no dislocation cluster and no COP, and contains an oxygen precipitation suppression region, and an epitaxial layer forming step of forming an epitaxial layer on a surface of the silicon wafer after the preliminary thermal treatment step. The production method further includes a thermal treatment condition determining step of determining a thermal treatment condition in the preliminary thermal treatment step, based on a ratio of the oxygen precipitation suppression region of the silicon wafer before the preliminary thermal treatment step is carried out.

Epitaxial silicon wafer and method for producing the epitaxial silicon wafer

Provided is an imaging device that includes a pixel unit in which each of a plurality of pixels includes m photoelectric conversion units and each of at least a part of the plurality of pixels outputs a first signal based on signal charges of n photoelectric conversion unit or units, where n is less than m; an adder unit configured to add a plurality of first signals output from a plurality of pixels different from each other; a determination unit configured to compare each of the plurality of first signals and a predetermined threshold to determine whether or not the plurality of first signals added by the adder unit include a signal larger than a predetermined threshold; and an output unit configured to output a determination result and the added signal.

Imaging device and imaging system

Growing community of inventors

Tokyo, Japan

Toshiaki Ono