Mitsubishi Denki Kabushiki Kaisha

Taiyo Sanso Co., Ltd.

Ryoden Semiconductor System Engineering Corporation

Taiyo Toyo Sanso Co., Ltd.

Dan Science Co., Ltd.

Tsiyo Sanso Co., Ltd.

Toshiaki Ohmori

Takaaki Fukumoto

Masuo Tada

Itaru Kanno

Takeki Hata

Hiroshi Tanaka

Masaharu Hama

Nobuaki Doi

Cozy Ban

Keisuke Namba

Motonori Yanagi

Norio Yamazaki

Masashi Mizuno

Tadashi Hyono

Kazuhiko Akamatsu

Shinichi Satou

Akemi Nagae

Yasuo Kamimura

Hiroi Takahiko

Shinji Endo

In forming a conduction film in a semiconductor device, after an uneven natural oxide film on a silicon film has been once removed, an even and clean silicon oxide film is formed by an oxidizing chemical solution treatment. After that, a silicide film is formed, thus forming a stable conduction film consisting of a two-layered structure of a polysilicon/silicide film.

Method of manufacturing a semiconductor device wiring layer having an oxide layer between the polysilicon and silicide layers

Super clean air suitable for use in a tunnel-type wafer transport system, etc., is produced efficiently with the specific energy consumption reduced and the yield improved by making good use of part of cooling energy and gas produced in a low temperature separation type nitrogen producing apparatus. Material air 1a collected from the atmosphere is pretreated in a room temperature adsorption tower 7, this pretreated air is adsorption treated at -60.degree. C. in a first low temperature adsorption tower 9, and the treated air 1c is further adsorption treated at -150.degree. C. in a second low temperature adsorption tower 10, thereby producing super clean air 1e containing not higher than 1 ppb of the chemical components other than nitrogen, oxygen and noble gases and having a dew point of not higher than -100.degree. C. The airs 1b and 1c are cooled in heat exchangers 12, 13 and 14 by utilizing cooling energy produced in the low temperature separation type nitrogen producing apparatus, that is, the low temperature gas 3f passed through an expansion turbine 38 from a rectifying tower 37.

Method and apparatus for producing super clean air

The present invention is directed to providing an apparatus which is improved so as to remove a contamination on a substrate efficiently. This apparatus includes a jet nozzle jetting out droplets toward a substrate. A liquid supply device and a gas supply device are connected to the jet nozzle. A mixing device mixing a liquid and a gas supplied to the jet nozzle and changing the liquid into the droplets is provided in the jet nozzle.

Washing apparatus and washing method

In an apparatus for treating the surface of a semiconductor substrate, hydrogen fluoride is dissolved in a nonaqueous solvent, ionizing anhydrous hydrogen fluoride, and the solution is vaporized. The vapor of the solution is introduced onto the surface of the semiconductor in a reaction chamber to treat this surface. The semiconductor substrate can be subjected to treatments, such as cleaning and etching, without producing reactions products on the surface.

Apparatus for treating the surface of a semiconductor substrate

To remove foreign matter (contaminants in the form of fine particles or a film of oil) deposited on a solid surface, fine frozen particles (0.01 .mu.m to 5 mm in diameter) are used. The fine frozen particles, together with chilled nitrogen, are jetted onto the surface of a solid by the pressure of a carrier gas (nitrogen (N.sub.2) gas). These fine frozen particles are produced by freezing a liquid such as water (super pure water) or alcohol. The hardness of the fine frozen particles is adjusted according to the type of liquid, the frozen freezing temperature and jetting temperature in order to control the damage to the surface of the solid. Low temperature cleaning (0.degree. to -150.degree. C.) in which fine frozen particles and chilled nitrogen are sprayed is achieved.

Method of cleaning a surface by blasting the fine frozen particles

A method in which a liquid is sprayed through a nozzle to form minute droplets of substantially uniform size. These uniform droplets are sprayed into and frozen by a refrigeration medium, such as liquid nitrogen, to form uniform diameter frozen particles. The frozen particles are ejected onto the surface of a substrate used in a liquid crystal display device to orient the liquid crystal material applied to the surface.

Method of preparing or rubbing a substrate to be used in a LCD device by

The method of treating a surface of a substrate (12) comprises the steps of physically treating the surface by jetting hydrogen peroxide containing ice particles (28) onto the substrate surface, and chemically treating the substrate surface with hydrogen peroxide solution obtained by melting the hydrogen peroxide containing ice particles (28).

Method of treating surface of substrate with ice particles and hydrogen

A cleaning device using fine frozen particles electrically charges the fine frozen particles produced by atomizing a liquid within a refrigerated atmosphere, controlling the speed, direction and divergence of the charged particles to cause them to strike a desired portion of an object to be cleaned. All of these operations are performed in a variable degree of vacuum. Thus, the speed, direction and divergence of the particles and the particle grain size can be precisely controlled.

Cleaning device using fine frozen particles

A cleaning method and a gettering method for semiconductor wafers comprises blasting frozen particles at the surface of a semiconductor wafer. A processing apparatus for a semiconductor wafer comprises means for forming ultrafine frozen particles and means for blasting the frozen particles at the surface of a semiconductor wafer to perform either the gettering or the cleaning of the semiconductor wafer. In one form of the invention, the frozen particles are formed by spraying a mist of water into a chamber partially filled with liquid nitrogen, which freezes the mist to form ice particles. In another form of the invention, the frozen particles are formed by spraying a mist of water into a chamber containing cold nitrogen gas, which freezes the mist to form ice particles. In another form of the invention, the frozen particles are formed by heating water to form water vapor and introducing the water vapor into a freezing chamber containing a two-phase mixture of a coolant which freezes the vapor into ultrafine particles. The frozen particles are blasted at a semiconductor wafer through a blasting nozzle by a gas such as nitrogen gas. When the frozen particles are used for gettering, they may further include nuclei of particles such as silica powder.

Processing method for semiconductor wafers

A cleaning method and a gettering method for semiconductor wafers comprises blasting frozen particles at the surface of a semiconductor wafer. A processing apparatus for a semiconductor wafer comprises means for forming ultrafine frozen particles and means for blasting the frozen particles at the surface of a semiconductor wafer to perform either the gettering or the cleaning of the semiconductor wafer. In one form of the invention, the frozen particles are formed by spraying a mist of water into a chamber partially filled with liquid nitrogen, which freezes the mist to form ice particles. In another form of the invention, the frozen particles are formed by spraying a mist of water into a chamber containing cold nitrogen gas, which freezes the mist to form ice particles. In another form of the invention, the frozen particles are formed by heating water to form water vapor and introducing the water vapor into a freezing chamber containing a two-phase mixture of a coolant which freezes the vapor into ultrafine particles. The frozen particles are blasted at a semiconductor wafer through a blasting nozzle by a gas such as nitrogen gas. When the frozen particles are used for gettering, they may further include abrasive particles such as silica powder.

Processing apparatus for semiconductor wafers

A semiconductor manufacturing apparatus includes members for uniformly supplying a reactant gas into a chamber and uniformly discharging it from the chamber, and two rectifying members disposed on opposite sides of a substrate for making the flow rate and the direction of the reactant gas constant. This arrangement ensures that the surface of the substrate is processed with a high degree of accuracy.

Semiconductor manufacturing apparatus

A solid surface cleaning device utilizes a jet of ice particles of ultrapure water for removing contaminants from a surface of a solid such as a semiconductor wafer. The electrical resistivity of ultrapure water stored in a tank is reduced by means of a gas such as dry air or carbon dioxide evolving into the water from a bubble tube disposed in the tank. The water whose resistivity is thus reduced is sprayed from a nozzle into an ice-making container which is refrigerated by the vaporization of a refrigerant discharged into the container. The fine ice particles that are thus generated in the container are sprayed and blasted from a jet spray nozzle onto the surface of the cleaned solid supported within a jet spray chamber. The air inside the chamber is exhausted by a blower together with the ice particles that have been ejected from the jet spray nozzle.

Ice particle forming and blasting device

A carrier cleaning and drying apparatus for cleaning and drying a wafer processing carrier has a cleaning tank for accommodating the carrier and a high-pressure injection nozzle disposed in an upper portion of the cleaning tank and for injecting a pressurized cleaning solution. This high-pressure injection nozzle is moved within a plane and the cleaning solution is injected at high pressure therefrom, thereby removing dust adhering to the inner and outer surfaces of the carrier by means of the force of injection. A supporting and rotating mechanism portion is also provided which, during cleaning of the carrier, swings the carrier at a predetermined angle, and, after cleaning, effects drying by spinning the carrier at high speed.

Growing community of inventors

Itami, Japan

Toshiaki Ohmori