Nichia Corporation

Citizen Electronics Co., Ltd.

Citizen Holdings Company, Ltd.

Toshiaki Ogawa

Shunsuke Minato

Takeshi Kususe

Hisashi Kasai

Masahiko Sano

Nodoka Oyamada

Naoki Azuma

Masakatsu Tomonari

A semiconductor device has a light emitting element, and a resin layer; the light emitting element includes a semiconductor laminated body in which a first semiconductor layer and a second semiconductor layer are laminated in sequence, a second electrode connected to the second semiconductor layer on an upper surface of the second semiconductor layer that forms an upper surface of the semiconductor laminated body, and a first electrode connected to the first semiconductor layer on an upper surface of the first semiconductor layer in which a portion of the second semiconductor layer on one surface of the semiconductor laminated body is removed and a portion of the first semiconductor layer is exposed; and the resin layer is configured to cover at least a side surface of the light emitting element, and an upper surface of the resin layer is lower than the upper surface of the semiconductor laminated body.

Light emitting device including light emitting element, outer connection electrodes and resin layer

A semiconductor light-emitting element capable of increasing a strength of adhesion between an electrode and a protection film. The semiconductor light-emitting element includes a semiconductor structure having an n-type semiconductor layer and a p-type semiconductor layer. A transparent conductive film is disposed on the p-type semiconductor layer. An insulation film is disposed on the transparent conductive film. A p-side electrode layer is disposed on the insulation film. A protection film is disposed over the insulation film, and the protection film covers part of the p-side electrode layer.

Semiconductor light-emitting element

A semiconductor light emitting device includes a semiconductor structure, a transparent electrically-conducting layer, a dielectric film, and a metal reflecting layer. The semiconductor structure includes an active region. The transparent electrically-conducting layer is formed on the upper surface of the semiconductor structure. The dielectric film is formed on the upper surface of the transparent electrically-conducting layer. The metal reflecting layer is formed on the upper surface of the dielectric film. The dielectric film has at least one opening whereby partially exposing the transparent electrically-conducting layer. The transparent electrically-conducting layer is electrically connected to the metal reflecting layer through the opening. A barrier layer is partially formed and covers the opening so that the barrier layer is interposed between the transparent electrically-conducting layer and the metal reflecting layer.

Semiconductor light emitting device including metal reflecting layer

A semiconductor light emitting device includes first and second semiconductor layers, an active region, a transparent electrically-conducting layer, a reflecting structure, and a first electrode. The second semiconductor layer has a conductivity different from the first semiconductor layer. The active region is arranged between the first and second semiconductor layers. The transparent electrically-conducting layeris arranged on or above the first semiconductor layer. The reflecting structureis arranged on or above the transparent electrically-conducting layer. The first electrode is arranged on or above the reflecting structure, and electrically connected to the first semiconductor layer. The reflecting structureincludes at least a reflective layer. An intermediate layeris interposed between the transparent electrically-conducting layerand the reflecting structure. The intermediate layeris formed of a material containing an element with larger ionization tendency than the reflective layer

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Anan, Japan

Toshiaki Ogawa