Fuji Photo Film Company, Limited

Fujifilm Corporation

Fujinon Corporation

Toshiaki Kuniyasu

Toshiaki Fukunaga

Toshihito Kimura

Tomonori Nishio

Kazuteru Nishijima

Toshiro Hayakawa

Mitsugu Wada

Takashi Nakamura

Hiroshi Maeda

Akinori Harada

Yoshinori Hotta

Takayuki Fujiwara

Kazuhiro Nishida

Fusao Yamanaka

Akira Wakabayashi

Hirotaka Watano

Hiroshi Makino

Akihiro Mukaiyama

A medicine-holding body is disposed in a flow path of a nozzle portion of an adapter for blood dispensing. The medicine-holding body is formed of a plurality of fibers which is made of polyester and is bundled by aligning a longitudinal direction thereof in a flowing direction which is a direction in which blood flows. The medicine-holding body holds an anticoagulant for suppressing coagulation of blood, as a medicine to be mixed into blood. The surface area of the medicine-holding body is greater than or equal to 10 mmand less than 600 mm. In a case where the surface area of the medicine-holding body is greater than or equal to 10 mm, the concentration of the anticoagulant becomes greater than or equal to a lower limit value of 10 U/mL even under most severe conditions such as a dispensing speed of 500 &#x3bc;L/second. In a case where the surface area of the medicine-holding body is less than 600 mm, it is possible to maintain the occurrence rate of hemolysis to be less than or equal to 10%.

Adapter for blood dispensing

A pipette tip includes a body and projections. In the body, a flow passage in which liquid from the syringe flows and an ejection opening that ejects the liquid, which has flowed through the flow passage, to the outside are formed. The ejection opening is formed in a distal end portion. The projections are provided on the distal end portion and protrude from a region around the ejection opening in the ejection direction of liquid. The projections are partially disposed around the central axis of the body. Even in a case where a residual droplet adheres to the ejection opening, the residual droplet does not adhere to an injection opening of a sample container, because the projections guard a region around the residual droplet.

Pipette tip and liquid injection method

A centrifugal separation unit that performs centrifugal separation on a sample that has been injected into a container by rotating the container about a center axis of the container, as a rotation axis, a measurement unit that measures a sample component in the container that has been centrifugally separated by the centrifugal separation unit, and a correction unit that performs, on a result of the measurement, correction operation processing based on a change in concentration caused by evaporation of the sample during the centrifugal separation are provided.

Measurement apparatus

In a container for centrifugal separation that includes a container main body including a retention part in which a sample is retained, and in which a component of the sample in the retention part is centrifugally separated by rotating the container main body about its center axis, as a rotation axis, material having thixotropic properties has been applied to an entire bottom surface of the retention part.

Container for centrifugal separation and its production method

An ultrasonic transducer in which electrodes can be easily and positively joined to a multiplicity of micro-fabricated vibrators and electric wiring can be easily and positively provided. The ultrasonic transducer has a vibrator arrangement having vibrators provided in a predetermined arrangement, each vibrator having first and second electrodes; an interlayer board for holding the vibrator arrangement in which through-holes are respectively formed in positions corresponding to the second electrodes of the vibrators; and a wiring board having a plurality of electrodes electrically connected to the second electrodes of the vibrators through the through-holes formed in the interlayer board, respectively.

Ultrasonic transducer and method of manufacturing the same

A multilayered structure which includes insulating layers and electrode layers and can be easily arrayed. The multilayered structure is manufactured by using a substrate on which first and second groups of columnar structures are arranged in a predetermined arrangement, and includes: a first electrode layer formed by forming a film of a conducting material on the substrate or an insulating layer except for portions around the first group of columnar structures; an insulating layer formed by spraying powder of an insulating material on the first electrode layer to deposit the powder thereon; a second electrode layer formed by forming a film of a conducting material on the insulating layer except for portions around the second group of columnar structures; and interconnections formed by filing, with a conducting material, holes formed by removing the columnar structures from the substrate.

Multilayered structure and method of manufacturing the same, and ultrasonic transducer

A laminated structure in which interconnections can be easily formed for electrodes and in which the damage of an insulating layer attributed to stress is relieved. The laminated structure includes a laminated piece having a first electrode layer provided with a first insulating region, a piezoelectric material layer, and a second electrode layer provided with a second insulating region at a position different from that of the first insulating region, a first interconnection line electrically connected to the first electrode layer while passing through the second insulating region provided in the second electrode layer, and a second interconnection line electrically connected to the second electrode layer while passing through the first insulating region provided in the first electrode layer.

Laminated structure and method of manufacturing the same

A multilayered structure array has narrow pitches by making thinner coatings for insulating internal electrode layers from side electrodes and the productivity of the multilayered structure array is improved. The multilayered structure includes: a first internal electrode layer; a piezoelectric layer formed on the first internal electrode layer; a second internal electrode layer formed on the piezoelectric layer; a first coating formed on an end surface of the first internal electrode layer in a first side surface region of the multilayered structure and containing one of metal oxide, metal nitride, metal fluoride and metal sulfide in at least one part thereof; and a second coating formed on an end surface of the second internal electrode layer in a second side surface region of the multilayered structure and containing one of metal oxide, metal nitride, metal fluoride and metal sulfide in at least one part thereof.

Multilayered structure, multilayered structure array and method of manufacturing the same

In a semiconductor laser element having a plurality of semiconductor layers formed on a substrate, a groove-form concave portion is formed on the surface of the substrate opposite to the surface having the semiconductor layers. The concave portion is filled with metal having a higher heat conductivity higher than the substrate. The semiconductor laser element achieves improved heat dissipation characteristics and high reliability even under high-output operation.

Semiconductor laser element and semiconductor laser

In a semiconductor laser device: a p-type AlGaAs cladding layer is formed above an active layer, where z&#x2267;0.3; a p-type GaAs contact layer is formed on the cladding layer except for at least one near-edge portion of the cladding layer; and an electrode is formed on at least the contact layer. The upper surface of each of the at least one near-edge portion of the cladding layer is insulated, where each of the at least one near-edge portion of the cladding layer is located in a vicinity of one of opposite end facets perpendicular to the direction of laser emission.

Semiconductor laser device in which near-edge portion of upper cladding layer is insulated for preventing current injection

An n-GaAs buffer layer, an n-AlGaAs lower cladding layer, an n- or i-InGaP lower optical waveguide layer, an InGaAsP quantum cell active layer, a p- or i-InGaP upper optical waveguide layer, a p-AlGaAs first upper cladding layer, a p- or i-InGaP etch-stopping layer, a p-AlGaAs second upper cladding layer, and a p-GaAs contact layer, are grown upon an n-GaAs substrate. A photoresist is coated on the wafer, and two grooves are formed by etching. Then, the photoresist on the perimeter of the device is removed and the contact layer is selectively etched. Next, the photoresist is lifted off. A SiOfilm is formed on the entire surface. After a window is formed in a portion of the SiOfilm corresponding to a ridge portion, a p-electrode is formed on a region of the SiOfilm other than the device perimeter.

Semiconductor laser device with a current non-injection region near a resonator end face, and fabrication method thereof

In a process for producing a semiconductor light emitting device, first, a lamination including an active zone, cladding layers, and a current confinement layer is formed. Then, a near-edge portion of the lamination having a stripe width is removed so as to produce a first space, and a second near-edge portion located under the first space and a stripe portion of the lamination being located inside the first space and having the stripe width are concurrently removed so that a second space is produced, and cross sections of the active layer and the current confinement layer are exposed in the second space. Finally, the first and second spaces are filled with a regrowth layer so that a dopant to the regrowth layer is diffused into a near-edge region of the remaining portion of the active layer.

Semiconductor light emitting device in which near-edge portion is filled with doped regrowth layer, and dopant to regrowth layer is diffused into near-edge region of active layer

In a process for producing a substrate for use in a semiconductor element: a first GaN layer having a plurality of pits at its upper surface is formed; and then a second GaN layer is formed by growing a GaN crystal over the first GaN layer until the upper surface of the second GaN layer becomes flattened. Each of the above plurality of pits has an opening area of 0.005 to 100 &mgr;m and a depth of 0.1 to 10.0 &mgr;m.

GaN substrate formed under controlled growth condition over GaN layer having discretely formed pits

A semiconductor laser device improves reliability during high-power oscillation. An n-type GaAs buffer layer, an n-type In Ga P lower cladding layer, an n-type or i-type In Ga As P optical waveguide layer, an i-type GaAs P tensile-strain barrier layer, an In Ga As P compressive-strain quantum-well active layer, an i-type GaAs P tensile-strain barrier layer, a p-type or i-type In Ga As P upper optical waveguide layer, a p-type In Ga P first upper cladding layer, a GaAs etching stop layer, a p-type In Ga P second upper cladding layer, and a p-type GaAs contact layer are grown on a plane of an n-type GaAs substrate. Two ridge trenches are formed on the resultant structure, and current non-injection regions are formed by removing the p-type GaAs contact layer in portions extending inwardly by 30 &mgr;m from cleavage positions of edge facets of the resonator on a top face of a ridge portion between the ridge trenches.

Growing community of inventors

Kaisei-machi, Japan

Toshiaki Kuniyasu