Tokyo Electron Limited

Tohoku University

Toshiaki Hongo

Tetsu Osawa

Tadahiro Ohmi

Masaki Hirayama

Provided is a plasma processing apparatus capable of generating a uniform plasma by preventing a nonuniformity of a current flow in a slot antenna. A dielectric plate is disposed to close a top opening of a plate cover and a slot antenna for generating plasma is disposed on the dielectric plate. By allowing an outer periphery of the slot antenna to make direct contact with an inner wall portion of the plate cover by using a conductive member having elasticity, when a microwave is supplied to slot antenna, it is possible to make an electrical resistance between the inner wall portion of the processing vessel and the outer periphery of the flat plate antenna substantially the same at any point in the entire circumference of the processing vessel, so that magnitude of the microwave current flowing in the slot antenna can be made approximately the same.

Plasma processing apparatus

A plasma processing method for forming a silicon nitride film on a silicon oxide film, the method including preparing a substrate on which the silicon oxide film is formed; generating plasma by supplying a nitrogen gas onto the silicon oxide film; and nitride-processing the silicon oxide film by the plasma so as to modify an upper portion of the silicon oxide film into the silicon nitride film.

Plasma processing method for forming a silicon nitride film on a silicon oxide film

A plasma processing apparatus includes, in order to efficiently cool an insulating plate having a relatively low thermal conductivity, a process chamber, the insulating plate divided into a plurality of regions and attached airtightly to the ceiling of the process chamber, a planar antenna member placed above the insulating plate and including microwave radiation holes for transmitting therethrough microwave used for generating plasma, and a support frame member supporting the insulating plate divided into a plurality of regions and including a heat medium path for flowing a heat medium along a line by which the insulating plate is divided into a plurality of regions and along a peripheral part of the insulating plate.

A plasma processing apparatus includes, in order to enhance the planar uniformity of the plasma density in a process space, a process chamber, an insulating plate attached airtightly to the ceiling of the process chamber, a planar antenna member placed above the insulating plate and including microwave radiation holes for transmitting therethrough microwave used for generating plasma, and a shield electrode member placed between the insulating plate and the planar antenna member for blocking out radiation of the microwave from the center and a part therearound of the planar antenna member.

This plating apparatus includes a plating bath filled up with a plating solution, a first O ring arranged on a top part of the plating bath , for electrical connection with an underlying electrode formed on a wafer , a second O ring arranged on the top part of the plating bath so as to prevent the plating solution in the plating bath from contact with the first O ring , an anode plate disposed in the plating bath and an ultrasonic oscillating element arranged in the plating bath . The plating apparatus is capable of forming a plating film having an uniform thickness on the semiconductor wafer.

Plating apparatus

A plasma processing apparatus applies a high-quality process to an object to be processed by preventing impurities from being generated due to a microwave transmitting through a dielectric plate. The dielectric plate is provided between a process chamber of a plasma processing apparatus and a slot electrode guiding a microwave used for a plasma process. A thickness H of the dielectric plate has a predetermined relationship with a wavelength &lgr; of the microwave in the dielectric plate so that an amount of isolation of the dielectric plate due to transmission of the microwave is minimized. The wavelength &lgr; is represented by &lgr;&equals;&lgr; n, where &lgr; is a wavelength of the microwave in a vacuum and n is a wavelength reducing rate of the dielectric plate represented by n&equals;1/(&egr; ) , where &egr; is a specific dielectric rate of the dielectric plate in a vacuum.

Plasma processing apparatus with a dielectric plate having a thickness based on a wavelength of a microwave introduced into a process chamber through the dielectric plate

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Amagasaki, Japan

Toshiaki Hongo