Mitsubishi Electric Corporation

Olympus Corporation

Japan Science and Technology Corporation

Toshiaki Hayashi

Kenji Murakami

Hajime Sotokawa

Kazuhiro Kan

Shinya Morikawa

Masaaki Tanaka

Hiroki Aoki

Masao Akai

Yuki Miyazaki

A heat exchanger that performs heat exchange between a supply air flow and an exhaust air flow includes: a heat exchange element in a prism shape; a plurality of frame bars, each of the plurality of frame bars being attached to a corresponding side of the heat exchange element, the corresponding side extending along an axial direction of the heat exchange element; and an end face plate at least partially covering an axial end face of the heat exchange element, the plurality of frame bars being joined to the end face plate. The frame bars are joined to the end face plate in such a way as to be movable in the axial direction of the heat exchange element.

Heat exchanger and heat exchange ventilator

A stent includes a first tubular unit that has a cylindrical tubular shape and a mesh circumferential surface; and a second tubular unit that has a cylindrical tubular shape and a mesh circumferential surface, and is connected to the first tubular unit in a longitudinal axis direction of the stent. The first tubular unit has a first-first direction bent portion which is bent to be convex toward the first direction side that is one side of the longitudinal axis direction, the second tubular unit has a second-second direction bent portion which is bent to be convex toward the second direction side that is the other side of the longitudinal axis direction, and the first-first direction bent portion and the second-second direction bent portion form a first connecting portion that is connected so as to be relatively movable.

Stent

A ferromagnetic double quantum well tunneling magnetoresistance device is disclosed that utilizes a two-dimensional electron (positive hole) system to obtain an infinitely great magnetoresistance ratio. Also disclosed are a sensitive magnetic sensor and a nonvolatile storage device derived from that device. In structural terms of the device, a first and a second quantum well layer of ferromagnetic material ( ) in each of which the quantum confinement for carriers is established in a two-dimensional electron (positive hole) state are each sandwiched between a pair of barrier layers of nonmagnetic material ( ) through which the carriers can tunnel. The first and second quantum well layers ( ) have a difference in coercive force so that when an external magnetic field is applied thereto only one of them may be reversed in the direction of magnetization. As a result, if magnetizations of the two quantum wells are parallel to each other, tunneling is allowed to occur, and if they are antiparallel to each other, tunneling is inhibited. A infinitely great tunneling magnetoresistance ratio is thereby obtained.

Ferromagnetic double quantum well tunnel magneto-resistance device

Growing community of inventors

Tokyo, Japan

Toshiaki Hayashi