Asahi Kasei Microdevices Corporation

Asahi Kasei Emd Corporation

Toshiaki Fukunaka

Edson Gomes Camargo

Hiroyuki Kato

Masayuki Sato

Yuta Takagi

Koji Matsushita

Sosuke Nishida

Yasutaka Myoraku

A gas sensor includes a light receiving element, a light emitting element, an integrated circuit, a lead frame, and a sealing member configured to seal these into a package. The lead frame includes at least one die pad portion and a plurality of terminal portions, the die pad portion includes a first region having a first thickness and a second region having a second thickness thinner than the first thickness, the integrated circuit is arranged on the second region of the die pad portion, the light emitting element is electrically connected to at least one of the plurality of terminal portions, the light receiving element is electrically connected to the integrated circuit and is arranged on the opposite side to the light emitting element with the integrated circuit interposed therebetween, and the integrated circuit is electrically connected to at least one of the plurality of terminal portions.

Gas sensor

Provided are an optical device that is a small and thin optical device including a redistribution layer and has high light emitting efficiency and light receiving efficiency, and a method for manufacturing the optical device. An optical device includes: a photoelectric conversion element configured to include a semiconductor substrate, a semiconductor layer capable of receiving or emitting light, and electrodes; a sealing portion configured to expose a surface of the photoelectric conversion element on the opposite side to an electrode-formed surface of the photoelectric conversion element on which the electrodes are formed; a redistribution layer configured to include a reflecting portion disposed in a region in which, when viewed in plan, the semiconductor layer and the electrodes do not overlap each other and configured to reflect the light to a side on which the semiconductor layer is located; and external connection terminals configured to be coupled to the redistributions.

Optical device and method for manufacturing optical device

The optical device includes a photoelectric conversion block including a photoelectric conversion chip configured to include photoelectric conversion elements arranged in a matrix and a first sealing member configured to cover side faces of the photoelectric conversion chip to expose the photoelectric conversion chip and a lens block including a lens and a second sealing member configured to cover side faces of the lens to expose one surface and an other surface of the lens. In the lens block, the one surface of the lens and the second sealing member forms a recessed portion, at least a part of a bottom surface of the recessed portion being formed by the one surface of the lens, a sidewall of the recessed portion being formed by the second sealing member, and the recessed portion being arranged such that the photoelectric conversion chip exposed from the first sealing member is covered.

Optical device having lens block having recessed portion covering photoelectric conversion block

To achieve the miniaturization of and the enhancement of the strength of a semiconductor element. In a semiconductor element () having a shape of a rectangular parallelepiped, on four sides forming one surface of the rectangular parallelepiped in plan view, portions of at least one of a first lead frame () and a second lead frame () are respectively in contact with the four sides and are exposed from a sealing portion () to serve as connection terminals (P, P, N, N), and in each of two pairs each composed of the two sides, facing each other, of the four sides, the portion of the first lead frame () is in contact with one of the two sides and is exposed as the connection terminal (P, P), the portion of the second lead frame () is in contact with the other of the two sides and is exposed as the connection terminal (N, N), and the connection terminal (P, P) formed by the first lead frame () and the connection terminal (N, N) formed by the second lead frame () are disposed at positions that are axially symmetric with each other.

Semiconductor element including encapsulated lead frames

A current sensor (current detection device)includes a conductorthrough which measurement-target current flows, a magnetic sensorthat detects magnetic fields generated by current flowing through the conductor and a packagethat, together with at least part of the conductor, separates the magnetic sensor from the conductor and covers and seals in their outer surfaces. Together with a curved portionof the conductor, the package separates, from the conductor through which measurement-target current flows, the magnetic sensor that detects magnetic fields generated by current flowing through the conductor and covers and seals in their outer surfaces so that an interface that can spread in the package, in which the magnetic sensor is embedded, from its boundaries with it is not formed; therefore, a high withstand voltage can be obtained.

Magnetic detection device, current detection device, method for manufacturing magnetic detection device, and method for manufacturing current detection device

A gas detection apparatus () includes a first layer () and a second layer () disposed opposite the first layer () in a predetermined direction (z-axis direction). The first layer () includes a light emitter that emits light and a light receiver that receives the light after the light passes through a waveguide. The second layer () includes a light input unit of the waveguide opposite the light emitter in the predetermined direction (z-axis direction) and a light output unit of the waveguide opposite the light receiver in the predetermined direction (z-axis direction). The gas detection apparatus () can be miniaturized.

Gas detection apparatus

PROBLEM TO BE SOLVED: To reduce an influence on an optical device caused by stress variation on a resin sealing body due to an environmental change and similar change. SOLUTION: An optical device includes a substrate, a semiconductor lamination portion formed on the substrateand configured to receive or emit a light, a protective layerthat has a shape to cover an entire surface of the semiconductor lamination portion, a mold resinconfigured to seal the protective layerand the substrateexcluding a surface of the substrateon an opposite side of a surface on which the semiconductor lamination portion is formed. The light is entered or emitted from a side of the substrate, and the mold resinincludes a through holeconfigured to pass through from a top surface of the mold resinto the protective layer. A deformation of the mold resinis reduced by the protective layerand the through hole. Then, stress variation acting on an active portionincluding the semiconductor lamination portion can be reduced.

Optical device and method for manufacturing the same

An infrared-sensor filter member includes an optical filter disposed in an opening portion of a second member and a first member. The infrared-sensor filter member includes a recess portion formed from a light-incident surface of the optical filter and the first member. At least a part of a bottom surface of the recess portion is formed by the light-incident surface and side walls of the recess portion, which are formed by the first member.

Infrared-sensor filter member, manufacturing method thereof, infrared sensor, and manufacturing method thereof

A filter member includes a first lead terminal, an optical filter, and a first mold member, and a light incidence surface and a light emission surface of the optical filter is exposed from the first mold member. A sensor member includes an IR sensor element, a second lead terminal and a second mold member. A light-receiving surface of the IR sensor element is exposed from the second mole member. The filter member is disposed on the sensor member so that the light emission surface of the optical filter faces the light-receiving surface of the IR sensor element in the sensor member.

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Tokyo, Japan

Toshiaki Fukunaka