Sharp Kabushiki Kaisha Corporation

Toshiaki Asai

Yoshihiko Tani

Tomoya Inoue

Masanori Watanabe

Katsuji Iguchi

Tetsuya Hanamoto

Akihiro Kurisu

Hiroyuki Kashihara

Hirotaka Watanabe

Hiroshi Nakatsu

Tadashi Takeoka

Kentaro Nonaka

A nitride semiconductor light-emitting element includes at least an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer. A multilayer body is provided between the n-type nitride semiconductor layer and the light-emitting layer, having at least one stack of first and second semiconductor layers. The second semiconductor layer has a greater band-gap energy than the first semiconductor layer. The first and second semiconductor layers each have a thickness of more than 10 nm and 30 nm or less. In applications in which luminous efficiency at room temperature is a high priority, the first semiconductor layer has a thickness of more than 10 nm and 30 nm or less, the second semiconductor layer has a thickness of more than 10 nm and 40 nm or less, and the light-emitting layer has V-shaped recesses in cross-sectional view.

Nitride semiconductor light-emitting element

A nitride semiconductor light emitting element is provided with: a substrate; a buffer layer that is provided on the substrate; a base layer that is provided on the buffer layer; an n-side nitride semiconductor layer that is provided on the base layer; an MQW light emitting layer that is provided on the n-side nitride semiconductor layer; and a p-side nitride semiconductor layer that is provided on the MQW light emitting layer. An x-ray rocking curve half-value width &#x3c9; (004) with respect to a (004) plane, i.e., the crystal plane of the nitride semiconductor, is 40 arcsec or less, or the x-ray rocking curve half-value width &#x3c9; (102) with respect to a (102) plane is 130 arcsec or less, and the rate P (80)/P (25) between light output P (25) at 25&#xb0; C. and light output P (80) at 80&#xb0; C. with a same operating current is 95% or more.

Nitride semiconductor light emitting element and method for manufacturing same

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Toshiaki Asai