Asahi Kasei Kabushiki Kaisha

Tohoku University

Toru Yumoto

Masanori Tsuruta

Akira Watanabe

Toshiyuki Hirano

Eiichi Ohno

Takahiro Sawamura

Masato Saito

Tomoko Kozono

Masashi Kogawa

Provided are: a structure with a conductive pattern that can be obtained in a simple manufacturing process and that exhibits favorable interlayer adhesion; and a method for manufacturing same. An embodiment of the present invention provides a structure with a conductive pattern, the structure comprising a base material, and a copper-containing conductive layer arranged on the surface of the base material, wherein when a principal surface of the conductive layer on the side facing the base material is a first principal surface, and a principal surface of the conductive layer on the opposite side from the first principal surface is a second principal surface, the conductive layer: has a porosity of 0.01 to 50 volume percent in a first principal surface-side region that extends from the first principal surface to a depth of 100 nm in the thickness direction of the conductive layer.

Structure with conductive pattern and method for manufacturing same

In the present invention, a conductive film having low resistance is formed on a substrate, said film having excellent storage stability and high dispersion stability as an ink. A copper oxide ink () contains a copper oxide (), a dispersant (), and a reducing agent. The content of the reducing agent is in the range of formula (1), and the content of the dispersant is in the range of formula (2). (1) 0.00010≤(reducing agent mass/copper oxide mass)≤0.10 (2) 0.0050≤(dispersant mass/copper oxide mass)≤0.30 The reducing agent content promotes the reduction of copper oxide to copper during firing, and promotes the sintering of copper.

Copper oxide ink and method for producing conductive substrate using same, product containing coating film and method for producing product using same, method for producing product with conductive pattern, and product with conductive pattern

In the present invention, a conductive film having low resistance is formed on a substrate, said film having excellent storage stability and high dispersion stability as an ink. A copper oxide ink () contains a copper oxide (), a dispersant (), and a reducing agent. The content of the reducing agent is in the range of formula (1), and the content of the dispersant is in the range of formula (2). (1) 0.00010&#x2264;(reducing agent mass/copper oxide mass)&#x2264;0.10 (2) 0.0050&#x2264;(dispersant mass/copper oxide mass)&#x2264;0.30 The reducing agent content promotes the reduction of copper oxide to copper during firing, and promotes the sintering of copper.

A conductive pattern having high dispersion stability and a low resistance over a board is formed. A dispersing element () contains a copper oxide (), a dispersing agent (), and a reductant. Content of the reductant is in a range of a following formula (1). Content of the dispersing agent is in a range of a following formula (2).0.0001&#x2264;(reductant mass/copper oxide mass)&#x2264;0.10&#x2003;&#x2003;(1)0.0050&#x2264;(dispersing agent mass/copper oxide mass)&#x2264;0.30&#x2003;&#x2003;(2) The dispersing element containing the reductant promotes reduction of copper oxide to copper in firing and promotes sintering of the copper.

Dispersing element, method for manufacturing structure with conductive pattern using the same, and structure with conductive pattern

A conductive pattern having high dispersion stability and a low resistance over a board is formed. A dispersing element () contains a copper oxide (), a dispersing agent (), and a reductant. Content of the reductant is in a range of a following formula (1). Content of the dispersing agent is in a range of a following formula (2).0.0001&#x2264;(reductant mass/copper oxide mass)&#x2264;0.10&#x2003;&#x2003;(1)0.0050&#x2264;(dispersing agent mass/copper oxide mass)&#x2264;0.30&#x2003;&#x2003;(2)The dispersing element containing the reductant promotes reduction of copper oxide to copper in firing and promotes sintering of the copper.

Provided is a structure that has highly reliable electroconductive pattern regions, that offers an extremely simple manufacturing process, and that has excellent electrical insulation between the electroconductive pattern regions. This structure () having electroconductive pattern regions is provided with a support (), and, on a surface configured by the support, a layer () in which insulation regions () containing a copper oxide- and phosphorus-containing organic substance and electroconductive pattern regions () containing copper are disposed next to one another. This stack is provided with: a support, a coating layer containing copper oxide and phosphorus and disposed on a surface configured by the support; and a resin layer disposed so as to cover the coating layer.

Structure including electroconductive pattern regions, method for producing same, stack, method for producing same, and copper wiring

The present invention relates to an application liquid for forming a semiconductor film, the application liquid comprising: an inorganic semiconductor particle; and a compound having a relative permittivity of 2 or more or a compound having reducing power against the inorganic semiconductor particle; a method for producing a semiconductor film comprising a step of applying the application liquid; a semiconductor film and a semiconductor element comprising the semiconductor film; and a method for producing the semiconductor element.

Semiconductor film and semiconductor element

Provided are a solar cell that can be manufactured by non-vacuum process and can have more excellent photoelectric conversion efficiency and a manufacturing method therefor as well as such a semiconductor device and a manufacturing method therefor. A solar cell, includes at least a first semiconductor layer and a second semiconductor layer. The first semiconductor layer includes metal oxide particles of 1 nm or more and 500 nm or less in average particle size and a compound having relative permittivity of 2 or more and 1,000 or less. For instance, the content of the organic compound in the first semiconductor layer is 10 mass % or more and 90 mass % or less.

Solar cell, manufacturing method therefor, semiconductor device, and manufacturing method therefor

Provided are a solar cell that can be manufactured by non-vacuum process and can have more excellent photoelectric conversion efficiency and a manufacturing method therefor as well as such a semiconductor device and a manufacturing method therefor. A solar cell, includes at least a first semiconductor layer () and a second semiconductor layer (). The first semiconductor layer () includes metal oxide particles of 1 nm or more and 500 nm or less in average particle size and a compound having relative permittivity of 2 or more and 1,000 or less. For instance, the content of the organic compound in the first semiconductor layer () is 10 mass % or more and 90 mass % or less.

It is intended to provide a method for producing an electronic device having a multilayer structure by a coating method, and a coating solution suitable for the production method. The present invention provides a method for producing an electronic device having at least two or more stacked layers containing organic matter, comprising a first step of applying a coating solution containing organic matter and a metal and/or a metal oxide onto a substrate either directly or via an additional layer to form a mixed layer, and a second step of directly applying a solution containing organic matter onto the mixed layer formed in the first step to form an organic layer. According to this method, an electronic device having a multilayer structure can be produced easily by a convenient coating method.

Growing community of inventors

Tokyo, Japan

Toru Yumoto