Max Co., Ltd.

Oki Semiconductor Co., Ltd.

Oki Electric Industry Co., Ltd.

Renesas Technology Corp.

Toru Yoshie

Takuya Kitamura

Atsushi Kurabayashi

Kazuaki Baba

Hiroshi Udagawa

Toshiyuki Kanai

Toshiya Ishida

Takuya Satou

Kazuo Takahashi

Toshio Shimizu

Kazuhide Abe

Yusuke Harada

Kazuhiko Kishi

Takao Hasegawa

Mitsuteru Kurosawa

Tomoaki Sakata

Yuji Sakurazawa

Kenji Komori

Katsumi Yoneda

It, as shown in FIG., is provided with a feed rollerthat is movable, rotates the spiral coilpassing through punched holesof the bundle of paper-sheets, and guides the spiral coilto feed it toward a coil advance direction, a screw guideat a movable and adjustable side that guides and conducts a forward end of the spiral coilfed by the feed rollertoward the coil advance direction into the punched holesthereof, and a control part that receives diameter-of-coil-setting information for setting a diameter of a coil of the spiral coiland controls positions of the feed rollerand the screw guidebased on the diameter-of-coil-setting information. Such a configuration enables the feed rollerand the screw guideto move to the guided positions of the spiral coilindicated by the diameter-of-coil-setting information. Accordingly, it is possible to pass the spiral coils having the different diameters thereof through the holes of the bundle of paper-sheets stably.

Paper sheet handling device

A silicon carbide semiconductor device is fabricated by forming an amorphous layer in a semiconductor layer of a silicon carbide substrate at a boundary between a cell forming area and an outer peripheral area, forming an outer peripheral insulating film over the semiconductor layer in the outer peripheral area, and thermally oxidizing an upper surface of the semiconductor layer in the cell forming area and at least a portion of the amorphous layer exposed by the outer peripheral insulating film to form a gate oxide film including a stepped portion of increased thickness adjacent the outer peripheral insulating film. The gate electrode layer is then formed which extends from the gate oxide film to above the outer peripheral insulating film.

Silicon carbide semiconductor device and manufacturing method thereof

A sheet hold flapis arranged on an upper side of a vicinity of a rear end portion of a sheet tableto which a sheet is continuously supplied from a copier or the like. The sheet hold flap is switched to an upper initial position and a sheet holding position by a solenoid. There is carried out a control of holding a rear end portion of a sheet P by driving the sheet hold flap to the sheet holding position after taking in a sheet to the sheet table and returning the sheet hold flap to the initial position to escape from a sheet path in taking in a successive sheet. Sheet jamming by floating up the sheet is prevented by holding a sheet on the sheet table until immediately before taking in the successive sheet.

Hold flap for sheet postprocessing apparatus

A supporting base, including a supporting plate and holders, holds a sapphire substrate so that one substrate surface faces a hot plate and the other substrate surface faces a radiant heat absorbing plate mounted on the supporting plate. Radiant heat from the hot plate passes through the sapphire substrate and heats the radiant heat absorbing plate. The sapphire substrate is heated from both sides by air warmed by the hot plate and radiant heat absorbing plate, and therefore does not warp. When the temperature of the sapphire substrate has reached the necessary level, the supporting base delivers the sapphire substrate to the surface of the hot plate, then moves away while the sapphire substrate is held against the hot plate and a semiconductor fabrication process is carried out on the sapphire substrate.

Apparatus and method for manufacturing a semiconductor device with a sapphire substrate

A binder cartridge () that can accommodate a large number of binders () , which are connected in parallel to each other by an engaging mechanism. A right angle crank-shaped guide groove () is formed in a gate portion () at the front end of the binder cartridge. A binder in the front row of the binder cartridge is moved by a binder lateral movement mechanism () along the crank-shaped guide groove in the lateral direction and is separated from the other binders. A pair of upper and lower pushers () of a bind mechanism portion () pinch division ring portions of the binder in the vertical direction and insert the division ring portions into a punch hole formed on the sheets of paper.

Bind processing method, bind processing device and binder cartridge

A positional relation between the position of the positioning platefor conducting reference-positioning on sheets of paper, which are fed onto the sheet table of the bind processing device, and the position of the division ring binder held by the binding mechanism section is set to be the same as a positional relation between the sides of the sheets of paper P and the punch holes. Forward end portions of the sheets of paper are pushed onto the sheet forward end position regulating plate, and the movable positioning platecomes close to the reference positioning plateand conducts positioning on the sheets of paper in a direction perpendicular to the sheet conveyance direction so as to arrange the positions of the sheets of paper. In this laminated state, the sheets of paper are sent to the binding mechanism section and attached with a binder. At the time of attaching the binder, positions of the punch holes and positions of the ring-portions of the division type ring binder accurately agree with each other. Accordingly, there is no possibility that the binder is defectively attached to the punch holes.

Binding processing apparatus

There is provided a sensorfor detecting penetration of a sheet by a punch hole aligning pin, and there is provided controlling means for retrying a penetrating operation by returning the punch hole aligning pin to an initial position when a time period from starting to move the pin to penetrating the sheet exceeds a reference time period. Even when a degree of unalignment of the punch hole of the sheet P is considerable and the punch hole aligning pin cannot penetrate through the sheet by once, the punch hole aligning pin is penetrated therethrough frequently by repeating the penetrating operation and therefore, an error in aligning the sheet can be reduced. In a case in which the pin is not penetrated through the sheet even when the penetrating operation is carried out by a predetermined number of times, the pin is returned to the initial position and an error is displayed.

Sheet postprocessing apparatus and sheet postprocessing method

A binder cartridge () that can accommodate a large number of binders (), which are connected in parallel to each other by an engaging mechanism. A right angle crank-shaped guide groove () is formed in a gate portion () at the front end of the binder cartridge. A binder in the front row of the binder cartridge is moved by a binder lateral movement mechanism () along the crank-shaped guide groove in the lateral direction and is separated from the other binders. A pair of upper and lower pushers () of a bind mechanism portion () pinch division ring portions of the binder in the vertical direction and insert the division ring portions into a punch hole formed on the sheets of paper.

Bind processing method, bind processing device, and binder cartridge

A binding processing apparatusis provided with a punch mechanismand a binding processing mechanismfor executing a binding processing by a binder. When a sheet P is fed from a printing apparatusof a copier or the like, the sheet is butted to a stopper plateof the punch mechanism, sheet aligning sliderspush both left and right sides thereof to position and punch holes are formed by a punch blockand a die. Thereafter, the sheet is fed to a sheet trayof the binding processing mechanism, one set of the sheets are aligned and a ring shape binder is pinched by a pusherto fit the ring shape binder to the punch holes of the sheets, and a brochure subjected to a binding processing is discharged to a stack tray. A binder cartridgecan contain a number of the binders and the binding processing can be executed continuously.

An opening portion () is formed at a rear face of a staple cartridge (), a slide door () is provided at the opening portion (), and the slide door () is maintained at a closing position by a tension coil spring (). When the slide door () is pushed down, also a pressing plate () is moved down by being pushed by the slide door, the opening portion () is opened and a staple pack () can be inserted into the cartridge. A staple can be refilled to an electric stapler () in a state of mounting the staple cartridge (), and time and labor of attaching and detaching the staple cartridge is dispensed with.

Staple cartridge

The present invention provides a method for manufacturing a semiconductor substrate in which a semiconductor wafer, formed of a material less likely to increase the hole diameter, is processed to a semiconductor substrate actually applicable to an existing manufacture line. An SiC waferis temporarily fixed to a Si waferthrough a wax. The SiC wafertemporarily fixed to the Si waferis overlapped with a Si waferhaving the same hole diameter as the Si waferthrough an SOG filmP. Orientation flatsA andA are aligned, and while the Si wafersandare overlapped with each other, heating is performed under pressure to solidify the SOG filmP, whereby an SOG solidified filmS is formed. With the aid of the SOG solidified filmS, the SiC waferis adhered to the Si wafer. The SiC waferis adhered at a predetermined position of the Si waferfacing the SiC waferso as to be transferred from the Si waferto the Si wafer. The unneeded Si waferis detached, and the waxis then removed.

Method for manufacturing semiconductor substrate

A silicon carbide semiconductor device includes a semiconductor substrate containing silicon carbide, a semiconductor layer formed over the semiconductor substrate, and a plurality of well regions formed on a front surface side of a cell forming area set to the semiconductor layer. The device further includes source layers formed on the front surface side lying within the well regions, an outer peripheral insulating film thick in thickness, which is formed over the semiconductor layer in an outer peripheral area surrounding the cell forming area, a gate oxide film formed over the front surface of the semiconductor layer in the cell forming area, and a gate electrode layer formed so as to extend from above the gate oxide film to above the outer peripheral insulating film.

A number of &#xbd; ring parts (and) are arranged at constant intervals on both sides of the spine portion () of binders, and the spine portion () and the &#xbd; ring parts (and) on both upper and lower sides are coupled together via thin hinges. As the spine portion () is not in double-split hinge structure, which is different from the case of conventional binders, it is ensured that the spine portion is held until the termination of the binding operation when a binding apparatus is used for causing a holding mechanism to clutch the spine portion of the binders so as to set the binders to face the back of sheets of loose-leaf paper and also causing an engaging mechanism to close and engage the &#xbd; ring parts.

Binder and binding device

A semiconductor manufacturing apparatus includes a hot plate which heats a sapphire substrate; a support table having a support plate disposed as being spaced away from the hot plate by a predetermined interval, and having support portions which respectively support the sapphire substrate while being spaced by a predetermined interval between the hot plate and the support plate and which support the sapphire substrate in such a manner that back surfaces of the hot plate and the sapphire substrate are opposite to each other; an elevating device which moves the support table up and down; and a shielding cover which externally blocks off spacing defined between the hot plate and the sapphire substrate and spacing defined between the sapphire substrate and the support plate.

Growing community of inventors

Tokyo, Japan

Toru Yoshie