Skyworks Solutions, Inc.

Skyworks Filter Solutions Japan Co., Ltd.

Panasonic Corporation

Skyworks Panasonic Filter Solutions Japan Co., Ltd.

Toru Yamaji

Hiroyuki Nakamura

Rei Goto

Koji Kawakita

Mitsunori Miyanari

Mitsuhiro Furukawa

Yosuke Hamaoka

Eiji Kawamoto

Joji Fujiwara

Tomohiro Iwasaki

Masahiro Yasumi

Shoji Okamoto

Kazunori Nishimura

Hidekazu Nakanishi

Kozo Murakami

Yuji Yashiro

Tetsuya Tsurunari

Toru Jibu

Tetsuhiro Korechika

An electronic device package includes a lower surface for conducting electronic signals, a first solder bond pad having a first size disposed on the lower surface, and a plurality of second solder bond pads having second sizes smaller than the first size disposed on the lower surface and surrounding the first solder bond pad.

High durability solder terminals

A surface acoustic wave device comprises a substrate and an interdigital transducer (IDT) electrode disposed on the substrate. The IDT electrode includes a lower electrode layer having a lower surface in contact with an upper surface of the substrate and an upper electrode layer having a lower surface defining a base in contact with an upper surface of the lower electrode layer. Side surfaces of the lower electrode layer are substantially perpendicular to the upper surface of the substrate. Side surfaces of the upper electrode layer are disposed at an acute angle relative to the upper surface of the substrate.

Acoustic wave device including multi-layer interdigital transducer electrodes

A SAW element configured to suppress spurious emissions resulting from non-periodicity of an IDT electrode finger arrangement. In one example, the SAW element is a resonator comprising an IDT electrode including a first plurality of IDT electrode fingers connected to a first busbar and a second plurality of IDT electrode fingers connected to a second busbar, and reflectors having a plurality of reflector fingers. The pluralities of first and second IDT electrode fingers are alternatively connected to each busbar by either normal connections or reversed connections and include regions arranged by at least two different types of pitches. The normal connections are such that either the odd-numbered or even-numbered IDT electrode fingers connect to the first busbar, and the reversed connections are such that the opposite group of IDT electrode fingers connect to the first busbar.

Surface acoustic wave elements with varying electrode finger pitch and connection arrangements

Aspects of this disclosure relate to a surface acoustic wave assembly that includes a first surface acoustic wave filter, a second surface acoustic wave filter, and a thermally conductive sheet configured to dissipate heat from the first surface acoustic wave filter in an area corresponding to the second surface acoustic wave filter. The thermally conductive sheet can be thinner than a piezoelectric layer of the first surface acoustic wave filter. Related radio frequency modules and methods are disclosed.

Acoustic wave filters with thermally conductive sheet

Aspects of this disclosure relate to a surface acoustic wave device that includes a thermally conductive layer configured to dissipate heat of the surface acoustic wave device. The surface acoustic wave device includes a piezoelectric layer and an interdigital transducer electrode on the piezoelectric layer. The thermally conductive layer can be thinner than the piezoelectric layer. Related radio frequency modules and wireless communication devices are disclosed.

Surface acoustic wave device with thermally conductive layer

Aspects of this disclosure relate to an acoustic wave device that includes an acoustic obstacle disposed between canceling circuits coupled to one or more acoustic wave filters. The canceling circuits can cancel frequency components within different frequency bands. The acoustic obstacle can reduce acoustic coupling between the canceling circuits by scattering and/or absorbing acoustic energy.

Acoustic wave device with acoustically separated multi-channel feedback

An acoustic wave device comprises an IDT electrode disposed above an upper surface of a piezoelectric substrate and includes a plurality of electrode fingers configured to excite a main acoustic wave. A first dielectric film made of an oxide is disposed above the upper surface of the piezoelectric substrate and covers the plurality of electrode fingers. A second dielectric film made of non-oxide is disposed between the first dielectric film and each of the plurality of electrode fingers. A third dielectric film is disposed between the piezoelectric substrate and the plurality of electrode fingers. A speed of a transverse wave propagating through the third dielectric film is greater than a speed of the main acoustic wave propagating through the piezoelectric substrate. The third dielectric film contacts the first dielectric film between adjacent electrode fingers of the plurality of electrode fingers.

Acoustic wave device including multiple dielectric films

An elastic wave device including a substrate, an interdigital transducer (IDT) electrode provided on an upper surface of the substrate, a first wiring electrode provided on the upper surface of the substrate and connected to the IDT electrode, a dielectric film that does not cover a first region of the first wiring electrode but covers a second region of the first wiring electrode above the substrate, the first wiring electrode including a cutout in the second region, and a second wiring electrode that covers an upper surface of the first wiring electrode in the first region and an upper surface of the dielectric film in the second region above the substrate.

Acoustic wave devices having improved connection reliability

An elastic wave device including a sealing structure. Examples of the elastic wave device include a piezoelectric substrate, an IDT electrode provided on the substrate, a first wiring electrode provided on the substrate adjacent the IDT electrode, a second wiring electrode provided on the first wiring electrode, and a dielectric sealing structure that extends over and seals an excitation space above the IDT electrode in which the IDT electrode excites the elastic wave. The second wiring electrode includes a protrusion formed on its outer periphery and extending beyond the first wiring electrode into the excitation space. The first and/or second wiring electrodes are electrically connected to the IDT electrode. The dielectric sealing structure includes a sealing wall provided on the second wiring electrode, the sealing wall being spaced apart from the IDT electrode by the protrusion and having a side surface that defines a side edge of the excitation space.

Elastic wave device with sealing structure

Acoustic wave devices, and antenna duplexers, modules, and communication devices using same

An elastic wave device that can be downsized. Certain examples of the elastic wave device include a substrate, an IDT electrode provided above the substrate, a wiring electrode provided above the substrate and connected to the IDT electrode, a sealing body sealing an excitation space in which the IDT electrode excites an elastic wave, and a sealing wall provided above the wiring electrode and forming a part of the sealing body. An outer periphery of the wiring electrode includes a protrusion. In one example, the wiring electrode includes a first wiring electrode provided on an upper surface of the substrate and a second wiring electrode provided on an upper surface of the first wiring electrode, an outer periphery of the second wiring electrode being provided with the protrusion.

Elastic wave devices

An acoustic wave device includes a piezoelectric substrate, an IDT electrode including plural electrode fingers disposed above an upper surface of the piezoelectric substrate, a first dielectric film made of oxide disposed above the upper surface of the substrate for covering the electrode fingers, and a second dielectric film made of non-oxide disposed on upper surfaces of the electrode fingers and between the first dielectric film and each of the electrode fingers. The first dielectric film contacts the upper surface of the piezoelectric substrate at a position between electrode fingers out of the plural electrode fingers adjacent to each other. The acoustic wave device prevents the electrode fingers of the IDT electrode from corrosion.

Acoustic wave device and electronic apparatus including same

An antenna duplexer includes first and second filters connected to an antenna terminal. The first filter has a passband of a low frequency band. The second filter has a passband of a high frequency band. The second filter is a ladder-type filter including series-arm resonators and parallel-arm resonators. At least one parallel-arm resonator out of the parallel-arm resonators has a main resonance and an auxiliary resonance. Attenuation poles caused by the main resonance and the auxiliary resonance are within the low frequency band. This antenna duplexer has a high attenuation characteristic and a high isolation characteristic while maintaining a low insertion loss.

Growing community of inventors

Kyoto-fu, Japan

Toru Yamaji