Mitsubishi Denki Kabushiki Kaisha

Toru Yamaguchi

Masashi Ohmori

Kouichirou Tsutahara

Akihiro Washitani

Toshihiko Minami

Yoshinobu Kawata

Taizo Ejima

Koichiro Tsutahara

The main feature of the present invention is to provide a reaction chamber for a chemical vapor deposition apparatus improved to achieve a uniform film deposition of high accuracy stably. The apparatus includes a wafer heating stage 28 for holding a wafer 14 with the surface downwards and for heating the wafer 14. The wafer heating stage 28 rotates about the center of the stage. In a low position opposing the wafer heating stage 28, a gas supplying head 37 is provided so as to form a constant spacing region 53 for supplying reaction gas towards the wafer heating stage 28. The reaction chamber includes a reaction chamber forming member 54 surrounding in a circumferential direction the spacing region 53 between the wafer heating stage 28 and the gas supplying head 37 to establish a reaction chamber having the spacing region 53 closed. An exhaust outlet 33 is provided in the reaction chamber forming member 54 and along the whole circumference of the wafer heating stage 28, and having a configuration selected to discharge gas in the reaction chamber upwards obliquely.

Reaction chamber for a chemical vapor deposition apparatus and a

An atmospheric CVD apparatus includes a gas head for ejecting reaction gases consisting of SiH.sub.4 gas and O.sub.2 gas, and a stage which is arranged at a position above the gas head and which is rotated while a semiconductor wafer retained on the bottom of the stage is heated to a temperature in the range of 380.degree. C. to 440.degree. C., the distance between the surface of the semiconductor wafer and the gas supply head being set in the range of 8 mm to 25 mm. The flow ratio between the reaction gases is so adjusted that when the flow rate of the O.sub.2 gas is represented as 1.0, that of the SiH.sub.4 gas is represented as 0.07 to 0.10. The apparatus deposits a reaction product film which excels in film thickness uniformity with a satisfactory level of reproducibility. Furthermore, the apparatus involves very little generation of foreign matter, including reaction products in the form of particles sticking to the surface of the semiconductor wafer, thereby making it possible to produce high-quality semiconductor devices.

Apparatus for atmospheric chemical vapor deposition

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Itami, Japan

Toru Yamaguchi