Shin-Etsu Chemical Co., Ltd.

Shin-Etsu Handotai Co., Ltd.

Toru Yamada

Teruhiko Hirasawa

Susumu Sakaguchi

Tadashi Kamioka

Takao Abe

Tsuguo Fukuda

Katsushi Tokunaga

Material gas hits the outer peripheral surface of a dam member and rides on the upper surface side, and then is allowed to flow along the main surface of a silicon single-crystal substrate placed on a susceptor. An upper lining member is disposed above the dam member so as to face the dam member. A gas introducing clearance is formed between the dam member and the upper lining member. In a vapor growth device, the upper lining member is regulated in size so that the length, formed in a direction along the horizontal reference line, of the gas introducing clearance gradually decreases as it is away from the horizontal reference line or is kept constant at any position. A vapor growth device capable of making more uniform the flowing route of a material gas flowing on the silicon single-crystal substrate, and a production method for an epitaxial wafer are provided.

Vapor phase growth apparatus and method of fabricating epitaxial wafer

The present invention provides a method and apparatus for growing a single crystal by the Czochralski method, wherein a single crystal is grown with forced cooling of neighborhood of a crystal growth interface by disposing a cooling cylinder formed of copper or a metal having a heat conductivity larger than that of copper at least in the vicinity of the crystal growth interface so as to surround the single crystal under pulling and circulating a cooling medium in the cooling cylinder. Thus, there are provided a method and apparatus for growing a single crystal, which can exert cooling effect on a growing single crystal to the maximum extent so as to realize higher crystal growth rate, even when a silicon single crystal having a diameter of 300 mm or more is grown.

Method and apparatus for growing single crystal

There are disclosed multi-crystalline silicon which is added with Ga (gallium) as a dopant and a method for producing Ga-doped multi-crystalline silicon, which comprises adding Ga to silicon melt in a crucible, which is melted by heating, and cooling the silicon melt to allow growth of multi-crystalline silicon. According to the present invention, there are provided multi-crystalline silicon and a multi-crystalline silicon wafer for producing solar cells showing stable conversion efficiency for light energy without causing photodegradation as well as methods for producing them.

Ga-doped multi-crytsalline silicon, Ga-doped multi-crystalline silicon wafer and method for producing the same

Proposed is a low-cost method for the preparation of a wire-formed crystal of silicon having a diameter of 1 mm or smaller, in which a vertically held starting rod of silicon is melted at one end portion by high-frequency induction heating, a seed crystal is brought into contact with the molten portion and then the seed crystal and the starting silicon rod are pulled apart in the vertical direction at a controlled velocity with a controlled high-frequency power input so that the melt of silicon drawn by the seed crystal is solidified and crystallized into the form of a wire.

Method for the preparation of wire-formed silicon crystal

A novel structure of a silicon solar cell is disclosed, which can be prepared at an outstandingly low cost but can still exhibit good efficiency for the conversion of solar energy to electricity. The silicon solar cell comprises, as an integral body:

Growing community of inventors

Annaka, Japan

Toru Yamada