Seiko Epson Corporation

Toru Watanabe

Shogo Inaba

Akira Sato

Takeshi Mori

Ryuji Kihara

Makoto Inoguchi

Provided is an inertial sensor module having excellent detection accuracy. The inertial sensor module includes: a first sensor having a first axis, a second axis, and a third axis as detection axes; and a second sensor having accuracy higher than that of the first sensor and having the third axis as a detection axis. The first sensor and the second sensor are disposed on an inner bottom surface which is one plane in a package. The first sensor and the second sensor are sealed by the package in an airtight manner.

Inertial sensor module

An inertial measurement unit includes: a substrate; a sealing member; a first inertial sensor module including a first inertial sensor and a first package accommodating the first inertial sensor; and a second inertial sensor module including a second inertial sensor and a second package accommodating the second inertial sensor. A material of the first package includes a resin. A material of the second package is an inorganic material. The first inertial sensor module is accommodated in a space between the substrate and the sealing member and thus airtightly sealed therein. The second inertial sensor module is provided outside the space.

Inertial measurement unit

A micro electro mechanical system (MEMS) device includes: a fixed electrode made of silicon and provided above a semiconductor substrate; a movable electrode made of silicon and arranged in a mechanically movable manner by having a gap from the semiconductor substrate; and a wiring layered part that is provided around the movable electrode, covers a portion of the fixed electrode and includes wiring. One of the fixed electrode and the movable electrode is implanted with an impurity ion and at least a part of the portion of the fixed electrode covered by the wiring layered part is silicidized.

MEMS device and fabrication method thereof

An electronic device, including a substrate, a functional structure constituting a functional element formed on the substrate, and a cover structure forming a cavity portion in which the functional structure is disposed, is disclosed. In the electronic device, the cover structure includes a laminated structure of an interlayer insulating film and a wiring layer, the laminated structure being formed on the substrate in such a way that it surrounds the cavity portion, and the cover structure has an upside cover portion covering the cavity portion from above, the upside cover portion being formed with part of the wiring layer that is disposed above the functional structure.

Electronic device and method for manufacturing thereof

A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.

MEMS device having a movable electrode

A resonator with a microeletromechanical system structure has a transistor with a gate electrode, a capacitor with an upper and lower electrode, a substrate, a first and second structure of the microelectromechanical system structure, a first silicon layer of the first structure and the upper electrode formed above the substrate, a second silicon layer of the second structure and the gate electrode unit formed above the substrate, and an insulating film formed above the capacitor and the transistor, the insulating film having an opening for placement of the second structure.

Resonator including a microelectromechanical system structure with first and second structures of silicon layers

An oscillator includes: a plurality of MEMS vibrators formed on a substrate; and an oscillator configuration circuit connected to the plurality of MEMS vibrators, wherein the plurality of MEMS vibrators each have a beam structure, and the respective beam structures are different, whereby their resonant frequencies are different.

MEMS oscillator and method of manufacturing thereof

An oscillator includes: a vibrator having a first electrode and a second electrode disposed with a gap with the first electrode; a reference voltage supply circuit adapted to supply a reference voltage; and a voltage adjustment circuit having a step-up circuit operating in response to input of clock pulses and adapted to convert the reference voltage into a voltage of a predetermined level and to output the voltage of the predetermined level, wherein the vibrator is configured so as to apply the voltage of the predetermined level, which is output from the voltage adjustment circuit, between the first electrode and the second electrode, and the clock pulses to be input into the step-up circuit are obtained using the vibrator as a source.

Oscillator with little deterioration capable of outputting clock pulses with target frequency

A resonant circuit includes a substrate; a MEMS resonator including a fixed electrode and a movable electrode formed above the substrate and having a first terminal and a second terminal, the movable electrode having a movable portion opposing at least a part of the fixed electrode; a first input-output terminal connected to the first terminal connected to one of the fixed electrode and the movable electrode of the MEMS resonator; a second input-output terminal connected to the second terminal connected to an other one of the fixed electrode and the movable electrode of the MEMS resonator; a voltage applying unit supplying a potential to at least the first terminal to apply a bias voltage between the first and the second terminals; and a variable capacitance connected between the first terminal and the first input-output terminal to allow a capacitance value to be changed by a change in a potential difference between opposite ends of the variable capacitance.

Resonant circuit, oscillation circuit, filter circuit, and electronic device

A resonant circuit includes a substrate; a MEMS resonator including a fixed electrode and a movable electrode formed above the substrate and having a first terminal and a second terminal, the movable electrode having a movable portion opposing at least a part of the fixed electrode; and a voltage applying unit applying a bias voltage to the MEMS resonator, the voltage applying unit including a voltage divider circuit that includes a compensation resistance formed of a same layer as that of the movable portion to allow a resistance value to be changed by a thickness of the layer and a reference resistance formed of a layer different from that of the movable portion and connected to the compensation resistance to output a junction potential between the compensation resistance and the reference resistance to at least one of the first and the second terminals of the MEMS resonator.

Resonant circuit, method of producing same, and electronic device

A micro-electro mechanical system (MEMS) switch includes a fixed electrode formed on a substrate, and a movable electric resistor formed on the substrate, the movable electric resistor serving as an electric resistor that divides an electric potential where the MEMS switch is set to a conduction state.

MEMS switch and manufacturing method thereof

A method is for manufacturing a microelectromechanical system resonator having a semiconductor device and a microelectromechanical system structure unit formed on a substrate. The method includes: forming a lower electrode of an oxide-nitride-oxide capacitor unit included in the semiconductor device using a first silicon layer; forming, using a second silicon layer, a substructure of the microelectromechanical system structure unit and an upper electrode of the oxide-nitride-oxide capacitor unit included in the semiconductor device; and forming, using a third silicon layer, a superstructure of the microelectromechanical system structure unit and a gate electrode of a complementary metal oxide semiconductor circuit unit included in the semiconductor device.

Growing community of inventors

Matsumoto, Japan

Toru Watanabe