Nagoya University

Panasonic Corporation

Mitsubishi Electric Corporation

Central Glass Company, Limited

Toru Ujihara

Makoto Kuwahara

Yukihisa Takeuchi

Shunta Harada

Tsutomu Nakanishi

Koh Saitoh

Yoshikazu Takeda

Nobuo Tanaka

Daishi Shiojiri

Hiroshi Saito

Ikuo Hayashi

Fumiaki Ichihashi

Masaki Matsumoto

Takeharu Kuroiwa

Takanori Tanaka

Takahiro Ito

Yukio Takeuchi

Tomonori Umezaki

Toshihiro Kato

Takashi Saka

Tomoaki Furusho

Peter Baltzer

Daiki Koike

Daiki Shimura

Kenta Murayama

Hidefumi Asano

Xiuguang Jin

Kohei Ishikawa

Naoto Yamamoto

Takahiko Kawaguchi

Masashi Nagaya

Mingyu Chen

Kazuaki Seki

Can Zhu

Mitsuya Nagaoka

A method for producing AlN crystals includes using at least one element, excluding Si, that satisfies a condition under which the element forms a compound with neither Al nor N or a condition under which the element forms a compound with any of Al and N provided that the standard free energy of formation of the compound is larger than that of AlN; melting a composition containing at least Al and the element; and reacting the Al vapor with nitrogen gas at a predetermined reaction temperature to produce AlN crystals.

AlN crystal preparation method, AlN crystals, and organic compound including AlN crystals

A method and apparatus for producing AlN whiskers includes reduced incorporation of metal particles, an AlN whisker body, AlN whiskers, a resin molded body, and a method for producing the resin molded body. The method for producing AlN whiskers includes heating an Al-containing material in a material accommodation unit to thereby generate Al gas; and introducing the Al gas into a reaction chamber through a communication portion while introducing nitrogen gas into the reaction chamber through a gas inlet port, to thereby grow AlN whiskers on the surface of an AlOsubstrate placed in the reaction chamber.

Method and apparatus for producing AlN whiskers, AlN whisker bodies, AlN whiskers, resin molded body, and method for producing resin molded body

It is an object of the present invention to provide a silicon carbide substrate having a low defect density that does not contaminate a process device and a silicon carbide semiconductor device including the silicon carbide substrate. A silicon carbide substrate according to the present invention is a silicon carbide substrate including: a substrate inner portion; and a substrate outer portion surrounding the substrate inner portion, wherein non-dopant metal impurity concentration of the substrate inner portion is 1&#xd7;10cmor more, and a region of the substrate outer portion at least on a surface side thereof is a substrate surface region in which the non-dopant metal impurity concentration is less than 1&#xd7;10cm.

Silicon carbide substrate, method for manufacturing silicon carbide substrate, and method for manufacturing silicon carbide semiconductor device

A lithium secondary battery has a positive electrode, an electrolyte containing lithium ions, and a negative electrode current collector having a surface on which a lithium metal or a lithium alloy is deposited/dissolved. In the surface of the negative electrode current collector, a group comprising at least one region whose principal crystal plane is a close-packed plane of the crystal structure or an off plane having an off-angle of 20&#xb0; or less with respect to the close-packed plane occupies the largest area among three or four groups each comprising at least one region having a principal crystal plane three of whose Miller indices are each represented by 0 or 1 or an off-plane having an off-angle of 20&#xb0; or less with respect to the principal crystal plane, the principal crystal plane being different for each of the three or four groups.

Lithium secondary battery

Electrons excited by irradiation of a visible light to a sample is at an energy level lower than a vacuum level, thus photoelectrons are not emitted from the sample and energy of excited electrons cannot be measured. The visible light is irradiated to the sample through a mesh electrode. A surface film for reducing the vacuum level is formed on a surface of the sample. With the surface film being formed, photoelectrons are obtained by the visible light, and these photoelectrons are accelerated by the mesh electrode toward a photoelectron spectrometer. Ultraviolet light may be irradiated to the sample and metal having same potential therewith. In this case, the mesh electrode is set at a retracted position to prohibit interaction of the mesh electrode and the ultraviolet light. A difference between the valence band and the Fermi level of the sample can be measured.

Apparatus and method for measuring energy of electrons

Provided is a method that allows growing a single crystal of silicon carbide on an off-substrate of silicon carbide while suppressing surface roughening. The method for producing a crystal of silicon carbide includes rotating a seed crystal of silicon carbide while bringing the seed crystal into contact with a starting material solution containing silicon and carbon. A crystal growth surface of the seed crystal has an off-angle, and the position of a rotation center of the seed crystal lies downstream of the central position of the seed crystal in a step flow direction that is a formation direction of the off-angle.

Method for producing crystal of silicon carbide, and crystal production device

A path of a spin-polarized electron beam is split into two by a splitter. A spin direction of the spin-polarized electron beam is rotated by a spin direction rotator disposed on a first path, and delayed by a first delay device. On a second path, the electron beam passes through a sample stage. The spin-polarized electron beams split into the first path and the second path are superposed by a biprism, and its intensity distribution is measured. Coherence is measured from a relation between a spin direction rotation angle, a delay time, and a visibility of an interference fringe.

Coherence measuring device for spin-polarized electron beam and method using the same

A technique of measuring energy of electrons excited by exposing a semiconductor material to solar ray is proposed. A surface layer having a negative electron affinity is formed on the surface of a semiconductor material. The semiconductor material is placed in a vacuum environment and exposed to solar ray. Photoelectrons emitted from the surface layer having the negative electron affinity are guided to an energy analyzer, and the energy of electrons excited by the solar ray is measured. Since the surface layer having the negative electron affinity is used, the photoelectrons are obtained from the electrons excited by the solar ray, and thereby energy measurement becomes possible.

Method and device for measuring energy of electrons excited by sunlight

An electron microscope which utilizes a polarized electron beam and can obtain a high contrast image of a sample is provided. The microscope includes: a laser; a polarization apparatus that polarizes a laser beam into a circularly polarized laser beam; a semiconductor photocathode that is provided with a strained superlattice semiconductor layer and generates a polarized electron beam when irradiated with the circularly polarized laser beam; a transmission electron microscope that utilizes the polarized electron beam; an electron beam intensity distribution recording apparatus arranged at a face reached by the polarized electron beam that has transmitted through the sample. An electron beam intensity distribution recording apparatus records an intensity distribution before and after the polarization of the electron beam is reversed, and a difference acquisition apparatus calculates a difference therebetween.

Electron microscope

A spin-polarized electron generating device includes a substrate, a buffer layer, a strained superlattice layer formed on the buffer layer, and an intermediate layer formed of a crystal having a lattice constant greater than a lattice constant of a crystal of the buffer layer, the intermediate layer intervening between the substrate and the buffer layer. The buffer layer includes cracks formed in a direction perpendicular to the substrate by tensile strain.

Spin-polarized electron source

Growing community of inventors

Nagoya, Japan

Toru Ujihara