Sony Corporation

Other

Sony International (Europe) Gmbh

Hideharu Miyagaki

Toru Udaka

Masaki Murata

Osamu Enoki

Rui Morimoto

Toshiharu Yanagida

Masaru Kawabata

Keiichi Nito

Kazuhiro Noda

Kazuhiro Tanaka

Toshiki Moriwaki

Akio Yasuda

Kenji Shinozaki

Toru Kihira

Mieko Kuwahara

Keita Tanaka

Osamu Goto

Takuya Ito

Mitsunobu Sekiya

Tatsuhiko Matsumoto

Masaki Ando

Yukihiro Sano

Toshifumi Takaoka

Hiroto Sasaki

Sae Miyaji

Ryoji Arai

Takumi Tsuji

Miki Sudou

Masayoshi Aonuma

An electronic device is provided and includes a first electrode, a second electrode and a photoelectric conversion layer sandwiched between the first electrode and the second electrode, the first electrode including an amorphous oxide including a quaternary compound including one or more of indium, gallium and aluminum and further including zinc and oxygen, the first electrode having a laminated structure including a first B layer and a first A layer from a photoelectric conversion layer side, and a work function value of the first A layer of the first electrode being lower than a work function of the first B layer of the first electrode.

Electronic device

An organic photoelectric conversion element, an imaging device, and an optical sensor, which can detect a plurality of wavelength regions by a single element structure, are provided. The photoelectric conversion element is formed by providing an organic photoelectric conversion portion including two or more types of organic semiconductor materials having different spectral sensitivities between the first and the second electrodes. Wavelength sensitivity characteristics of the photoelectric conversion element change according to a voltage (bias voltage) applied between the first and the second electrodes. The photoelectric conversion element is mounted in the imaging device and the optical sensor.

Photoelectric conversion element, imaging device, and optical sensor

An imaging device is provided. The imaging device includes a semiconductor substrate; a first electrode disposed above the semiconductor substrate; a second electrode disposed above the first electrode; and a photoelectric conversion layer disposed between the first electrode and the second electrode, wherein a difference between a work function value of the first electrode and a work function value of the second electrode is 0.4 eV or more, and wherein the first electrode has a sheet resistance value of 3&#xd7;10 &#x3a9;/&#x25a1; to 1&#xd7;10&#x3a9;/&#x25a1;.

Imaging device having a photoelectric conversion layer

There are provided an electronic device including a first electrode, a second electrode and a photoelectric conversion layer sandwiched between the first electrode and the second electrode, the first electrode including an amorphous oxide composed of at least a quaternary compound of indium, gallium and/or aluminum, zinc and oxygen, and a difference between a work function value of the second electrode and a work function value of the first electrode being 0.4 eV or more; and a method of producing an electrode for the electronic device.

Electronic device, solid state imaging apparatus, and method of producing electrode for electronic device

Provided is a light receiving/emitting element and a light receiving/emitting apparatus that can be easily manufactured and allow high-sensitivity detection. The light receiving/emitting element is configured to include a first organic photoelectric conversion unit and a second organic photoelectric conversion unit that is disposed on the first organic photoelectric conversion unit and is different in spectral sensitivity from the first organic photoelectric conversion unit, wherein one of the first organic photoelectric conversion unit and the second organic photoelectric conversion unit acts as a light receiving unit and the other acts as a light emitting unit. The light receiving/emitting apparatus is configured to have the light receiving/emitting element mounted thereon.

Light receiving/emitting element and light receiving/emitting apparatus

Image sensors, electronic apparatuses, and methods of manufacturing an image sensor are provided. More particularly, an image sensor having a plurality of photoelectric conversion elements included in a laminated body is provided. At least one of the photoelectric conversion elements includes organic photoelectric conversion elements. In addition, at least a first surface of the laminated body includes a curved light incident surface, which further includes a concave surface. The plurality of photoelectric conversion elements receive light through the concave light incident surface. The laminated body can be connected to a support structure.

Solid-state image pickup device and electronic apparatus

A solid-state image pickup unit of the invention includes a plurality of pixels, each of which includes a photoelectric conversion element. The photoelectric conversion element includes a photoelectric conversion layer; and first and second electrodes provided with the photoelectric conversion layer in between, the photoelectric conversion layer including a first organic semiconductor of a first conductive type and a second organic semiconductor of a second conductive type, and being configured by addition of a third organic semiconductor made of a derivative or an isomer of one of the first and second organic semiconductors.

Photoelectric conversion device, solid-state image pickup unit, and electronic apparatus including ternary system of organic semiconductors

A photoelectric conversion device includes an organic photoelectric conversion film; a first electrode and a second electrode provided with the organic photoelectric conversion film in between; and a charge block layer provided between the second electrode and the organic photoelectric conversion film, in which the charge block layer includes a work function adjustment layer including a metal element on the second electrode side of the organic photoelectric conversion film, the metal element being adopted to adjust a work function, and a first diffusion suppression layer provided between the work function adjustment layer and the second electrode and suppressing diffusion of the metal element to the second electrode side.

Photoelectric conversion device, solid-state image pickup unit, and electronic apparatuses having work function adjustment layers and diffusion suppression layers

A polarization organic photoelectric conversion device having a structure in which an organic photoelectric conversion layer is interposed between a first electrode and a second electrode, at least one of which is transparent, wherein the organic photoelectric conversion layer is one obtained by uniaxially orienting at least a portion thereof in the plane in advance.

Polarization organic photoelectric conversion device, method for producing polarization organic photoelectric conversion device, polarization optical device, imaging device, and electronic apparatus

A liquid crystal light control element, a lens barrel, and an imaging device, which are so designed as to adequately control the amount of light led to the imaging element at the time of photographing in a bright ambience are provided. The lens barrel includes an optical system, a liquid crystal light control element, and an imaging element. The object image captured by the optical system reaches the imaging element through the liquid crystal light control element, which is composed of a first liquid crystal light control unit, a second liquid crystal light control unit, and a first and a second liquid crystal layers, which are placed on top of the other in their thickness direction.

Liquid crystal light control element, lens barrel, and imaging device

An optical device includes: a sealed container having edge walls facing each other in a thickness direction of the container and a side wall connecting both of the edge walls; a first liquid with polarity or electrical conductivity and sealed within the container; a second liquid that is sealed within the container and does not mixed with the first liquid; and a voltage applying unit for applying a voltage across the first liquid. The first and second liquid have equal specific gravity, and transmissivity of the first liquid is lower than the transmissivity of the second liquid. An interface between the first liquid and the second liquid changes shape in response to a voltage applied by the voltage applying unit. The first liquid is formed so as to have equal specific gravity to the second liquid by mixing three or more kinds of liquids each having a different specific gravity.

Optical device

The liquid crystal light control element includes the first to third transparent substrates which are placed on top of the other. The second transparent substrate has the projecting part which extends in the surface direction of the second transparent substrate from the first and third transparent substrates. The projecting part has the first surface facing the first transparent electrode and the second surface facing the fourth transparent electrode. The first surface has the first to fourth terminals formed thereon which are electrically connected to the first to fourth transparent electrodes.

Electrical light control element, lens barrel, and imaging device

Between each transparent pixel electrode driven by TFT as a drive device and a common electrode, a polymer layer located in contact with the transparent pixel electrode and electrically active to change in color by electrochemical oxidization or reduction and a polymeric solid electrolytic layer located in contact with the polymer layer and containing a coloring agent are interposed. Since electrochemical oxidization or reduction brings about a color change, the contrast and the black concentration can be enhanced, and bronzing after long-time use does not occur.

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Kanagawa, Japan

Toru Udaka