Kaneka Corporation

Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Toru Terashita

Daisuke Adachi

Kunta Yoshikawa

Teruhisa Ikuta

Yoshinobu Sato

Hiroyoshi Ogura

Masafumi Hiraishi

Hisao Ichijo

Kenji Yamamoto

Gensuke Koizumi

Kohei Kojima

Junichi Nakamura

Kunihiro Nakano

Toshihiko Uto

Hisashi Uzu

Mitsuru Ichikawa

A solar cell module, which is easily coordinated with the color of an exterior member at the installation position, comprises a solar cell; a light receiving side sealing material and a light receiving side protection member laminated and disposed in this order on a light receiving side with reference to the solar cell; and a back-side sealing material and a back-side protection member laminated and arranged in this order on a back side on the opposite side from the light receiving side. A value computed from a measured value of the color of reflected light combining positive reflected light and diffused reflected light which are based on light that has become incident on an object to be measured, and a measured value of the color only of the diffused reflected light based on the light that has become incident on the object to be measured, satisfies a specific condition.

Solar cell module

A connecting member set includes a first connecting member connected to one of a pair of solar cells, and a second connecting member connected to the other solar cell. The first connecting member and the second connecting member have a first planar portion and a second planar portion, respectively. The first planar portion and the second planar portion are layered on each other and electrically connected with each other. The first planar portion has at least one of a cut-out portion or an opening through which the second planar portion is exposed toward the first planar portion when the first planar portion and the second planar portion are layered on each other.

Connection member set for solar battery cell, and solar cell string and solar cell module using same

A solar cell module includes a solar cell string including a plurality of solar cells connected through a wiring member. The solar cell includes a photoelectric conversion section, a light-receiving-surface electrode disposed on a light-receiving surface of the photoelectric conversion section, and a metal film disposed on a back face of the photoelectric conversion section. The metal film has a plurality of openings along the extending direction of the wiring member, in a connection region between the solar cell and the wiring member. The wiring member is connected through an adhesive layer to the metal film and to the photoelectric conversion section exposed from the openings of the metal film or an electrode fixed on the photoelectric conversion section. There is a non-bonding portion between the metal film and the photoelectric conversion section.

The solar cell includes a plurality of light-receiving-side finger electrodes on a light-receiving surface of a photoelectric conversion section having a semiconductor junction. The light-receiving surface of the photoelectric conversion section is covered with a first insulating layer. Each light-receiving-side finger electrodes include: a first metal seed layer provided between the photoelectric conversion section and the first insulating layer; and a first plating metal layer being conduction with the first metal seed layer through openings formed in the first insulating layer. The solar cell includes an isolated plating metal layer pieces contacting neither the light-receiving-side finger electrodes nor the back-side finger electrodes. On the surface of the first insulating layer, an isolated plating metal crowded region is present in a form of a band-shape extending parallel to an extending direction of the light-receiving-side finger electrodes.

Solar cell, method for manufacturing same and solar cell module

In the solar cell module, a first solar cell and a second solar cell are stacked together with an electroconductive member interposed therebetween, such that a cleaved surface-side periphery on a light-receiving surface of the first solar cell overlaps a periphery on a back surface of the second solar cell. The first solar cell and the second solar cell each have: photoelectric conversion section including a crystalline silicon substrate; collecting electrode; and back electrode. At a section where the first solar cell and the second solar cell are stacked, the collecting electrode of the first solar cell and the back electrode of the second solar cell are electrically connected to each other by coming into contact with the electroconductive member. An insulating member is provided on a part of the cleaved surface-side periphery on the light-receiving surface of the first solar cell, where the collecting electrode is not provided.

Solar cell module and method for manufacturing same

A method for manufacturing a multi-junction photoelectric conversion device includes forming a first electrode on a first photoelectric conversion unit including a first semiconductor layer as a photoelectric conversion layer, the first electrode including a plurality of patterned regions separated from one another by separation grooves; and eliminating a leakage existing in the first semiconductor layer by applying a reverse bias voltage between one of the patterned regions of the first electrode and a second photoelectric conversion unit comprising a second semiconductor layer as a photoelectric conversion layer. The application of the reverse bias voltage is performed while irradiating the second photoelectric conversion unit with light, generating a photocurrent in the second photoelectric conversion unit that is larger than a photocurrent in the first photoelectric conversion unit.

Method for manufacturing multijunction photoelectric conversion device

The solar cell includes a collecting electrode on a first principal surface of a photoelectric conversion section. The collecting electrode comprises a first electroconductive layer and a second electroconductive layer in this order from the photoelectric conversion section side. An insulating layer is provided on the first principal surface of the photoelectric conversion section so as to cover substantially the entire surface of the region where the first electroconductive layer is not provided and a part of the first electroconductive layer. The insulating layer on the first electroconductive layer has an opening, and the second electroconductive layer is a plating layer that is in conduction with the first electroconductive layer through the opening section of the insulating layer. The first electroconductive layer contains a metal particle component and an insulating material. The metal particle component of the first electroconductive layer includes primary particles and secondary particles. It is preferable that in a cross-section of the first electroconductive layer, the area ratio of the secondary particles to the total of the primary particles and the secondary particles and the coefficient of variation of the particle size are respectively within specific ranges.

Solar cell, method for manufacturing same

A method for manufacturing a crystalline silicon-based solar cell includes forming a first intrinsic silicon-based thin-film on a first principal surface and a lateral surface of an n-type crystalline silicon substrate, forming a p-type silicon-based thin-film on the first intrinsic silicon-based thin-film, forming a first transparent electrode layer on an entire region of the first principal surface except for a peripheral portion, forming a second intrinsic silicon-based thin-film on a second principal surface and the lateral surface of the n-type crystalline silicon substrate, forming an n-type silicon-based thin-film on the second intrinsic silicon-based thin-film, forming a second transparent electrode layer on an entire region of the second principal surface and the lateral surface of the n-type crystalline silicon substrate, forming a patterned collecting electrode on the first transparent electrode layer, and forming a plated metal electrode on the second transparent electrode layer by an electroplating method.

Method for manufacturing crystalline silicon-based solar cell and method for manufacturing crystalline silicon-based solar cell module

This solar cell module includes a solar cell and a wiring member. The solar cell includes a collecting electrode on a light-receiving side of a photoelectric conversion section, and a back electrode on a back side of the photoelectric conversion section. Sequentially from the photoelectric conversion section side, the collecting electrode includes a first collecting electrode and a second collecting electrode, and the back electrode comprises a first back electrode and a second back electrode. It is preferable that the surface roughness Ra1 of the first collecting electrode and the surface roughness Ra2 of the second collecting electrode satisfy Ra1&#x2265;Ra2 and Ra2=1.0 to 10.0 &#x3bc;m. It is also preferable that the outermost layer of the second collecting electrode and the outermost layer of the second back electrode are mainly composed of the same electroconductive material.

A high breakdown voltage semiconductor device is formed using an SOI substrate comprising a support substrate, an insulating film, and an active layer. The high breakdown voltage semiconductor device comprises an N-type well region and a P-type drain offset region formed on the active layer, a P-type source region formed on the well region, a P-type drain region formed on the drain offset region, a gate insulating film formed in at least a region interposed between the source region and the drain offset region of the active layer, and a gate electrode formed on the gate insulating film. The device further comprises an N-type deep well region formed under the drain offset region. A concentration peak of N-type impurity for formation of the deep well region is located deeper than a concentration peak of P-type impurity for formation of the drain offset region.

High breakdown voltage semiconductor device and fabrication method of the same

Provided is a semiconductor device which includes a conductive bonding pad formed on a semiconductor substrate of the first conduction type via an insulating film and a diffusion layer of the second conduction type formed on a surface of the semiconductor substrate under the bonding pad. Characteristics do not deteriorate even when a breakdown occurs during wire bonding.

Semiconductor device

An object of the present invention is to provide a semiconductor device which enables to reduce the device area, while securing the breakdown voltage between the drain and the source of each MOS transistor for the semiconductor device including plural MOS transistors, which are arrayed adjacently each other, with different types of channel conductivity. The semiconductor device includes a semiconductor substrate, a buried oxide film and a semiconductor layer, and furthermore the semiconductor layer has an island-like semiconductor layer, in which a MOS transistor is formed, the MOS transistor has a source region, and a drain region that is positioned in the periphery of the source region, an island-like semiconductor layer, in which a MOS transistor is formed, the MOS transistor has a drain region, and a source region that is positioned in the periphery of the drain region, an isolation trench which isolates the former island-like semiconductor layer from other portions of the semiconductor layer, an isolation trench which isolates the latter island-like semiconductor layer from other portions of the semiconductor layer, and a buffer region, in which the electric potential is fixed to the lowest electric potential in a circuit, which prevents an electrical interference occurred between transistors.

In a high voltage P-channel MOS transistor formed on a silicon-on-insulator (SOI) substrate, a P-type source region (), an N-type body region () and an N-body contact diffusion region () are surrounded by a P-type drain region () and a P-type drift region (). A gate electrode () is formed to overlap the end portion of the N-type body region (). The end portion of the N-type body region () has a portion in which the gate electrode () and the P-type source region () are not adjacent to each other.

Growing community of inventors

Settsu, Japan

Toru Terashita