Nec Corporation

Canon Anelva Corporation

Anelva Corporation

Renesas Electronics Corporation

Tokyo Electron Limited

Toru Tatsumi

Takashi Nakagawa

Naomu Kitano

Hirohito Watanabe

Kazuhiko Endo

Nobuyuki Ikarashi

Naoki Kasai

Hiromitsu Hada

Hidemitsu Mori

Yoshishige Matsumoto

Koji Watanabe

Hitoshi Wakabayashi

Junro Sakai

Ken-ichi Aketagawa

Kiyoshi Takeuchi

Shinya Ito

Yoshihisa Matsubara

Takashi Ishigami

Koichi Takeda

Noriaki Oda

Akira Matsumoto

Masahiro Nomura

Tadahiko Horiuchi

Kensuke Takahashi

Kenzo Manabe

Atsushi Ogura

Ko Noguchi

Masayasu Tanaka

Tohru Mogami

Masahiko Nakamae

Koichi Terashima

Yoshitake Ohnishi

Shigeharu Yamagami

Makiko Oshida

Shun-Ichi Murakami

Hiroyoshi Murota

Kenji Matsumoto

Junichi Fujikata

Hiroshi Shinriki

Akira Sakai

Atsushi Yamashita

Jun Ushida

Mitsuhiro Sugiyama

Akihito Tanabe

Takuya Seino

Daisuke Okamoto

Kenichi Nishi

Mitsuhiro Togo

Kazuaki Matsuo

Motomu Kosuda

Kazutoshi Shiba

Haruhiko Ono

Shinji Fujieda

Heiji Watanabe

Toyoji Yamamoto

A method for manufacturing a dielectric film having a high dielectric constant is provided. The method is a method for forming, on a substrate, a dielectric film including a metal oxide containing O and elements A and B, wherein the element A comprises Hf or a mixture of Hf and Zr and the element B comprises Al or Si, which includes the steps of: forming a metal oxide having an amorphous structure which has a molar ratio between element A and element B, B/(A+B) of 0.02&#x2266;(B/(A+B))&#x2266;0.095 and a molar ratio between element A and O, O/A of 1.0&#x3c;(O/A)&#x3c;2.0; and annealing the metal oxide having the amorphous structure at 700&#xb0; C. or more to form a metal oxide containing a crystal phase with a cubic crystal content of 80% or more.

Methods for manufacturing dielectric films

This invention provides a semiconductor device having a field effect transistor comprising a gate electrode comprising a metal nitride layer and a polycrystalline silicon layer, and the gate electrode is excellent in thermal stability and realizes a desired work function. In the semiconductor device, a gate insulating filmon a silicon substratehas a high-permittivity insulating film formed of a metal oxide, a metal silicate, a metal oxide introduced with nitrogen, or a metal silicate introduced with nitrogen, the gate electrode has a first metal nitride layerprovided on the gate insulating filmand containing Ti and N, a second metal nitride layercontaining Ti and N, and a polycrystalline silicon layer, in the first metal nitride layer, a molar ratio between Ti and N (N/Ti) is not less than 1.1, and a crystalline orientation X1 is 1.1&#x3c;X1 &#x3c;1.8, and in the second metal nitride layer, the molar ratio between Ti and N (N/Ti) is not less than 1.1, and a crystalline orientation X2 is 1.8&#x2266;X2.

Semiconductor device and method of manufacturing the same

To provide a method of manufacturing a dielectric film having a high dielectric constant. In an embodiment of the present invention, an HfN/Hf laminated film is formed on a substrate on which a thin silicon oxide film is formed and a dielectric film of a metal nitride made of a mixture of Hf, Si, O and N is manufactured by annealing treatment. According to the present invention, it is possible to (1) reduce an EOT, (2) reduce a leak current to Jg=1.0&#xd7;10A/cmor less, (3) suppress hysteresis caused by the generation of fixed charges, and (4) prevent an increase in EOT even if heat treatment at 700&#xb0; C. or more is performed and obtain excellent heat resistance.

Method of manufacturing hafnium-containing and silicon-containing metal oxynitride dielectric film

The lattice mismatching between a Ge layer and a Si layer is as large as about 4%. Thus, when the Ge layer is grown on the Si layer, penetration dislocation is introduced to cause leakage current at the p-i-n junction. Thereby, the photo-detection sensitivity is reduced, and the reliability of the element is also lowered. Further, in the connection with a Si waveguide, there are also problems of the reflection loss due to the difference in refractive index between Si and Ge, and of the absorption loss caused by a metal electrode. In order to solve said problems, according to the present invention, there is provided a vertical type pin-SiGe photodiode having a structure which is embedded in a groove formed in a part of a Si layer, in which a p-type or n-type doped layer is formed in a lower section of the groove, and in which a i-SiGe layer having a rectangular shape or a reverse tapered shape is formed on a layered structure formed by laminating a i-Si layer and a SiGe buffer layer on the lower section and the side wall of the groove. Further, in an optical connection section with a Si waveguide, impedance matching is effected by the layered structure composed of the i-Si layer and the SiGe buffer layer, and an upper metal layer is separated therefrom so that a poly-Si bridge structure is employed to electrically connect the upper metal layer therewith.

SiGe photodiode

To make it possible to significantly suppress the leakage current in a semiconductor device having a capacitor structure using a dielectric film. There is provided a composite oxide dielectric which is mainly composed of Zr, Al and O, and which has a composition ratio of Zr and Al in a range of (1&#x2212;x):x where 0.01&#x2266;x&#x2266;0.15, and has a crystal structure. When the dielectric is set to have the Al composition in the above described range and is crystallized, the relative dielectric constant of the dielectric can be significantly increased. When the dielectric is used as a dielectric film of a capacitor of a semiconductor device, the leakage current of the capacitor can be significantly reduced.

Dielectric, capacitor using dielectric, semiconductor device using dielectric, and manufacturing method of dielectric

The present invention provides a method of manufacturing a dielectric film having a high permittivity. An embodiment of the present invention is a method of manufacturing, on a substrate, a dielectric film including a metallic oxynitride containing an element A made of Hf or a mixture of Hf and Zr, an element B made of Al, and N and O. The manufacturing method includes: a step of forming a metallic oxynitride whose mole fractions of the element A, the element B, and N expressed as B/(A+B+N) has a range of 0.015&#x2266;(B/(A+B+N))&#x2266;0.095 and N/(A+B+N) has a range of 0.045&#x2266;(N/(A+B+N)) and a mole fraction O/A of the element A and O has a range expressed as 1.0&#x3c;(O/A)&#x3c;2.0, and having a noncrystalline structure; and a step of performing an annealing treatment at 700&#xb0; C. or higher on the metallic oxynitride having a noncrystalline structure to form a metallic oxynitride including a crystalline phase with a cubical crystal incorporation percentage of 80% or higher.

Dielectric film with hafnium aluminum oxynitride film

The present invention provides a dielectric film having a high permittivity and a high heat resistance. An embodiment of the present invention is a dielectric film () including a composite oxynitride containing an element A made of Hf, an element B made of Al or Si, and N and O, wherein mole fractions of the element A, the element B, and N expressed as B/(A+B+N) range from 0.015 to 0.095 and N/(A+B+N) equals or exceeds 0.045, and has a crystalline structure.

Dielectric film and semiconductor device using dielectric film including hafnium, aluminum or silicon, nitrogen, and oxygen

A formation method of a metallic compound layer includes preparing, in a chamber, a substrate having a surface on which a semiconductor material of silicon, germanium, or silicon germanium is exposed, and forming a metallic compound layer, includes: supplying a raw material gas containing a metal for forming a metallic compound with the semiconductor material to the chamber; heating the substrate to a temperature at which the raw material gas is pyrolyzed; and forming a metallic compound layer by reaction of the metal with the semiconductor material so that no layer of the metal is deposited on the substrate. A manufacturing method of a semiconductor device employs this formation method of a metallic compound layer.

Formation method of metallic compound layer, manufacturing method of semiconductor device, and formation apparatus for metallic compound layer

The present invention provides a method of manufacturing a dielectric film having a high permittivity. An embodiment of the present invention is a method of manufacturing, on a substrate, a dielectric film including a metallic oxynitride containing an element A made of Hf or a mixture of Hf and Zr, an element B made of Al, and N and O. The manufacturing method includes: a step of forming a metallic oxynitride whose mole fractions of the element A, the element B, and N expressed as B/(A+B+N) has a range of 0.015&#x2266;(B/A+B+N))&#x2266;0.095 and N/(A+B+N) has a range of 0.045&#x2266;(N/(A+B+N)) and a mole fraction O/A of the element A and O has a range expressed as 1.0&#x3c;(O/A)&#x3c;2.0, and having a noncrystalline structure; and a step of performing an annealing treatment at 700&#xb0; C. or higher on the metallic oxynitride having a noncrystalline structure to form a metallic oxynitride including a crystalline phase with a cubical crystal incorporation percentage of 80% or higher.

Method of manufacturing dielectric film that has hafnium-containing and aluminum-containing oxynitride

A semiconductor device comprising a first semiconductor region and a second semiconductor region,

Semiconductor device and method for manufacturing same

The task of the present invention is to enable formation of a gate insulating film structure having a good-quality interface between a silicon oxide film and silicon in an interface between a high dielectric constant thin film and a silicon substrate to provide a semiconductor device and a semiconductor manufacturing method which are capable of improving interface electrical characteristics, which has been a longstanding task in practical use of a high dielectric constant insulating film. A metal layer deposition process and a heat treatment process which supply metal elements constituting a high dielectric constant film on a surface of a base silicon oxide filmallow the metal elements to be diffused into the base silicon oxide filmto thereby form an insulating film structureas a gate insulating film, after forming the base silicon oxide filmon a surface of a silicon substrate. The insulating film structureincluding a silicate region comprises a silicon oxide film region, a silicate region, and a metal rich region, forming a silicate structure having composition modulation in which composition of metal increases as closer to an upper portion, and the composition of silicon increases as closer to a lower portion.

Semiconductor device, production method and production device thereof

A semiconductor device comprising: a MIS type field effect transistor which comprises a semiconductor raised portion protruding from a substrate plane, a gate electrode extending over the semiconductor raised portion from the top onto the opposite side faces of the semiconductor raised portion, a gate insulation film existing between the gate electrode and the semiconductor raised portion, and source and drain regions provided in the semiconductor raised portion; an interlayer insulating film provided on a substrate including the transistor; and a buried conductor interconnect that is formed by filling in a trench formed in the interlayer insulating film with a conductor, wherein the buried conductor interconnect connects one of the source and drain regions of the semiconductor raised portion and another conductive portion below the interlayer insulating film.

Semiconductor device having a conductive portion below an interlayer insulating film and method for producing the same

There is provided a semiconductor device which is capable of solving a problem of threshold control in CMOS transistor, accompanied with combination of a gate insulating film having a high dielectric constant and a metal gate electrode, and significantly enhancing performances without deterioration in reliability of a device. The semiconductor device includes a gate insulating film composed of a material having a high dielectric constant, and a gate electrode. A portion of the gate electrode making contact with the gate insulating film has a composition including silicide of metal M expressed with MxSi(0&#x3c;X&#x3c;1), as a primary constituent. X is greater than 0.5 (X&#x3e;0.5) in a p-type MOSFET, and is equal to or smaller than 0.5 (X&#x2266;0.5) in a n-type MOSFET.

Semiconductor device with silicide-containing gate electrode and method of fabricating the same

[Problems] To provide a semiconductor device including a MIS-type FET having an excellent characteristic of low leakage current despite use of a high-K material of a high dielectric constant in a gate insulating film. [Means for solving Problems] A MIS-type field-effect-transistor (FET) including: a silicon substrate (); an insulating film () formed on the silicon substrate and containing silicon and at least one of nitrogen and oxygen; a metal oxide film formed on the insulating film and containing silicon and hafnium; and a gate electrode formed on the metal oxide film, wherein a silicon molar ratio (Si/(Si+Hf)) in the meal oxide film is in the range of 2 to 15%.

Semiconductor device having a mis-type fet, and methods for manufacturing the same and forming a metal oxide film

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Tokyo, Japan

Toru Tatsumi