Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaisha

Other

Advanced Display, Inc.

Toru Takeguchi

Takeshi Kubota

Nobuhiro Nakamura

Kazunori Inoue

Yasuyoshi Itoh

Kazushi Yamayoshi

Naoki Nakagawa

Kazuyuki Sugahara

Masami Hayashi

Nobuaki Ishiga

Kensuke Nagayama

Shinsuke Yura

Tomoyuki Irizumi

Takeshi Ono

Shingo Nagano

Kaoru Motonami

Yusuke Yamagata

Naoki Tsumura

Masaru Aoki

Hitoshi Nagata

Takuji Imamura

Kazuyuki Sakata

Atsuhiro Sono

Shinichi Yano

Kazumasa Kawase

Atsunori Nishiura

Osamu Miyagawa

Osamu Tanina

Kazutoshi Aoki

Osamu Miyakawa

Masaru Yamada

In a lead-out wiring area, a protective conductive film is formed on a bottom surface and a side surface of a first contact hole including a surface of a first low resistance conductive film, and a part of a surface of an upper interlayer insulating film, and a second protective conductive film is formed on a bottom surface and a side surface of a second contact hole including a surface of a second low resistance conductive film, and a part of the surface of the upper interlayer insulating film. Then, a lower layer terminal part for a lower layer wiring line is formed of a laminated structure of the first low resistance conductive film and the first protective conductive film, and an upper layer terminal part for an upper layer wiring line is formed of a laminated structure of the second low resistance conductive film and the second protective conductive film.

Touch panel structure, method for manufacturing touch panel structure and method for manufacturing display apparatus

A display panel includes a first substrate in which a display region and a circuit component mounting region are defined and a second substrate, an end of which is cut to expose the circuit component mounting region. The first substrate includes a plurality of first source wirings formed from the display region to the circuit component mounting region and a wiring protection pattern formed in a region corresponding to the cut end of the second substrate between any adjacent first source wirings. In a cross sectional view, an upper end of the wiring protection pattern is located above an upper end of the first source wirings.

Display panel including wiring protection pattern and display device

A thin film transistor array substrate of the present invention having an array area, and a frame area, the thin film transistor array substrate includes: a thin film transistor; an upper metal pattern formed by the same material as source and drain electrodes at the same layer; a transparent conductive film pattern; and an upper layer insulation film, wherein the transparent conductive film pattern has: a first-type transparent conductive film pattern provided to located within one of a pattern of the electrode pattern and a pattern of the metal pattern, as viewed from the top side, and to not cover pattern end faces of the electrode pattern or the metal pattern; and a second-type transparent conductive film pattern provided to stick out from an inside of at least a portion of one of the patterns, as viewed from the top side and to cover the pattern end faces.

Thin film transistor array substrate and liquid crystal display apparatus comprising a transparent conductive film pattern having a first type pattern and a second type pattern

In an active matrix substrate, the source electrode side and/or the drain electrode side of a crystalline semiconductor film extends to an area located outside both the thin-film transistor and the gate electrode, and a metal light-shielding film is provided, in the same layer as the gate electrode, between the contacting portion between the source electrode or the source line and the crystalline semiconductor film and the gate electrode, and/or between the contacting portion between the drain electrode and the crystalline semiconductor film and the gate electrode. An impurity-implanted region implanted with n-type impurity may be formed between the contacting portion between the source electrode or the source line and the crystalline semiconductor film and the gate electrode, and/or between the contacting portion between the drain electrode and the crystalline semiconductor film and the gate electrode.

Active matrix substrate and liquid crystal device

It is an object to provide a technique to improve electric characteristics after a high-temperature treatment even when a high melting point metal barrier layer is not formed. A semiconductor device includes a gate electrode formed on a transparent insulation substrate, a semiconductor layer having a Si semiconductor active film and an ohmic low resistance Si film having an n-type conductivity, being formed in this order on the gate electrode with a gate insulation film interposed between the gate electrode and the semiconductor layer, and the source and drain electrodes directly connected to the semiconductor layer and containing at least aluminum (Al). At least nitrogen (N) is contained in a first region that is in the vicinity of an interface between a side surface of the SI semiconductor active film and the source and drain electrodes.

Semiconductor device including a region containing nitrogen at an interface and display device

A method of crystallizing an amorphous semiconductor film, the method comprising the steps of: forming a gate electrode on a transparent insulating substrate; forming a gate insulating film on the transparent insulating substrate and on an upper part of the gate electrode; forming an amorphous semiconductor film on the gate insulating film; forming a light-transmissive insulating film on the amorphous semiconductor film; forming a metal film having an opening on the light-transmissive insulating film; irradiating laser light onto both a region of the light-transmissive insulating film exposed by the opening and the metal film, which is used as a mask for shielding the laser light; and performing laser annealing to make the laser light to be absorbed through the light-transmissive insulating film into a region of the amorphous semiconductor film exposed by the opening, so that the amorphous semiconductor film is heated and converted to a crystalline semiconductor film.

Method of crystallizing amorphous semiconductor film, thin-film transistor, semiconductor device, display device, and method of manufacturing the same

On a translucent substrate, an insulating film having a refractive index n and an amorphous silicon film are deposited successively. By irradiating the amorphous silicon film with a laser beam having a beam shape of a band shape extending along a length direction with a wavelength &#x3bb;, a plurality of times from a side of amorphous silicon film facing the insulating film, while an irradiation position of the laser beam is shifted each of the plurality of times in a width direction of the band shape by a distance smaller than a width dimension of the band shape, a polycrystalline silicon film is formed from the amorphous silicon film. Forming the polycrystalline silicon film forms crystal grain boundaries which extend in the width direction and are disposed at a mean spacing measured along the length direction and ranging from (&#x3bb;/n)&#xd7;0.95 to (&#x3bb;/n)&#xd7;1.05 inclusive, and crystal grain boundaries which, in a region between crystal grain boundaries adjacent to each other and extending in the width direction, extend in the length direction and are disposed at a mean spacing measured along the width direction and ranging from (&#x3bb;/n)&#xd7;0.95 to (&#x3bb;/n)&#xd7;1.05 inclusive.

Method of manufacturing semiconductor thin film

In a thin film transistor using a polycrystalline semiconductor film, when a storage capacitor is formed, it is often that a polycrystalline semiconductor film is used also in one electrode of the capacity. In a display device having a storage capacitor and thin film transistor which have a polycrystalline semiconductor film, the storage capacitor exhibits a voltage dependency due to the semiconductor film, and hence a display failure is caused. In the display device of the invention, a metal conductive filmis stacked above a semiconductor layermade of a polycrystalline semiconductor film which is used as a lower electrode of a storage capacitor

Display device and method of producing the same

A semiconductor thin film according to an embodiment of the present invention includes: a polycrystallized semiconductor thin film formed by applying laser light to an amorphous semiconductor thin film; and crystal grains arranged into a lattice shape with a size that is about &#xbd; of an oscillation wavelength of the laser light.

Semiconductor thin film, thin film transistor, method of manufacturing the semiconductor thin film, method of manufacturing the thin film transistor, and manufacturing device of semiconductor thin film

An island-like semiconductor layer is formed on a main surface of an insulating substrate. A side wall of the island-like semiconductor layer is made substantially perpendicular to the insulating substrate. An insulating film is formed along the side wall of the semiconductor layer. The insulating film is formed to include a slanted face and have a sectional shape in which a width measured from the side wall of the semiconductor layer decreases as a distance to a bottom increases. A gate insulating film can be formed on the semiconductor layer with good step coverage because of inclusion of the insulating film, to preclude a possibility of causing disconnection of a gate electrode. Also, a thickness of a portion of the semiconductor layer in which a channel region is formed is uniform, to obtain stable transistor characteristics.

Thin film transistor having an island like semiconductor layer on an insulator

A wiring layer includes a signal line and covers a predetermined portion on a source region and a drain region of a crystalline silicon layer. A gate insulating layer is on the crystalline silicon layer and the wiring layer. A gate electrode layer above the gate insulating layer includes a scanning line, a gate electrode corresponding to a channel region of the crystalline silicon layer, and a capacitor electrode corresponding to a predetermined portion of the wiring layer. The capacitor electrode is formed separately from the scanning line and the gate electrode and is configured to form a capacitor with the wiring layer. An interlayer insulating film is on the gate electrode layer and the gate insulating layer. A pixel electrode layer on the interlayer insulating film includes a pixel electrode connected to the wiring layer through a contact hole in the gate insulating layer and the interlayer insulating film.

Display device and method of manufacturing the display device

A semiconductor device includes a glass substrate having a main surface, a polysilicon film formed on the main surface, having a channel region formed and having a source region and a drain region formed on opposing sides of the channel region, a gate insulating film provided so as to be in contact with the polysilicon film and containing oxygen, and a gate electrode provided in a position facing the channel region with the gate insulating film being interposed. The polysilicon film has a thickness larger than 50 nm and not larger than 150 nm. The polysilicon film contains hydrogen in a proportion not smaller than 0.5 atomic percent and not larger than 10 atomic percent. With such a structure, a semiconductor device attaining a large drain current and having a desired electric characteristic is provided.

Semiconductor device

A thin film transistor includes: an insulation substrate; a semiconductor layer formed on the insulation substrate including, conductive regions that includes impurity, and a channel region sandwiched between the conductive regions; an insulation layer that covers the semiconductor layer; a gate electrode that is formed on the insulator layer at a position where opposes the channel region; and a source electrode and a drain electrode connected to the conductive regions. The channel region divided into a plurality of channel regions and each of channel widths of the plurality of channel regions is in a range from 5 &#x3bc;m to 30 &#x3bc;m.

Thin film transistor having a channel region that includes a plurality of connecting channel regions

A transparent conductive film substantially made from InO, SnOand ZnO, having a molar ratio In/(In+Sn+Zn) of 0.65 to 0.8 and also a molar ratio Sn/Zn of 1 or less: The transparent conductive film has a favorable electric contact property with an electrode or line made from Al or Al alloy film. Further, a semiconductor device having an electrode or line made from the transparent conductive film has high reliability and productivity.

Transparent conductive film, semiconductor device and active matrix display unit

A method of manufacturing a liquid crystal display holding a liquid crystal layer between a picture element substrate on which a pixel electrode driven by a thin film transistor is formed and a opposed counter substrate and forming a terminal to an external driving circuit on the picture element substrate, includes forming a semiconductor layer on the substrate, forming a gate insulating film on the semiconductor layer, forming a gate electrode on the gate insulating film, forming a source-drain region in the semiconductor layer, forming a source-drain wire on the substrate, forming a terminal wire on the substrate, forming insulating inorganic films on regions of the terminal wire on the external driving circuit and a display area sides, forming an organic resin film on the insulating inorganic film, and forming a conductive film on the terminal wire. The conductive film has a predetermined distance to the organic resin film.

Growing community of inventors

Tokyo, Japan

Toru Takeguchi