Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Nuvoton Technology Corporation Japan

Panasonic Intellectual Property Management Co., Ltd.

Matsushita Electronics Corporation

Panasonic Semiconductor Solutions Co., Ltd.

Other

Toru Takayama

Isao Kidoguchi

Takaaki Baba

James S Harris, Jr

Tougo Nakatani

Tomoya Satoh

Yasuhiro Fujimoto

Satoshi Murasawa

Masahiro Kume

Katsuya Samonji

Hisashi Nakayama

Koichi Hayakawa

Masaaki Yuri

Osamu Imafuji

Norio Ikedo

Takahiro Okaguchi

Tomohito Yabushita

Takeshi Yokoyama

Shinji Yoshida

Kunimasa Takahashi

Kunio Itoh

Akio Yoshikawa

Hirokazu Shimizu

Hiroki Naito

Takashi Kano

Issei Ohta

Hideyuki Sugiura

Hideo Nagai

Hiroki Nagai

Hitoshi Sato

Yoshiaki Hasegawa

Kenji Orita

Seiichiro Tamai

Keiji Ito

Osamu Tomita

Masaru Kazumura

Tomoya Sato

Kunio Ito

Tohru Nishikawa

Shouichi Takasuka

Hideo Kitagawa

Masayuki Ono

Masatoshi Sasaki

Takayuki Kashima

Daisuke Ikeda

Shoichi Takasuka

Shinji Ueda

Satoko Kawasaki

Gen Shimizu

A semiconductor light-emitting device includes: a first semiconductor layer containing a first conductivity type nitride semiconductor; an active layer containing a nitride semiconductor including Ga or In; an electron barrier layer containing a nitride semiconductor including at least Al, and being of a second conductivity type; and a second semiconductor layer containing a second conductivity type nitride semiconductor. The electron barrier layer includes a region where an Al composition ratio increases monotonically toward the second semiconductor layer. A maximum impurity concentration position of the second conductivity type in the electron barrier layer is located between an interface on an active layer side of the electron barrier layer and an intermediate position between a maximum Al composition ratio position of the electron barrier layer in the region and an interface on an active layer side of the electron barrier layer.

Semiconductor light-emitting device

A semiconductor laser device lases in a multiple transverse mode and includes a stacked structure where a first conductivity-side semiconductor layer, an active layer, and a second conductivity-side semiconductor layer are stacked above a substrate. The second conductivity-side semiconductor layer includes a current block layer having an opening that delimits a current injection region. Side faces as a pair are formed in portions of the stacked structure that range from part of the first conductivity-side semiconductor layer to the second conductivity-side semiconductor layer. The active layer has a second width greater than a first width of the opening. The side faces in at least part of the first conductivity-side semiconductor layer are inclined to the substrate. A maximum intensity position in a light distribution of light guided in the stacked structure, in a direction of the normal to the substrate, is within the first conductivity-side semiconductor layer.

Semiconductor laser device, semiconductor laser module, and welding laser light source system

A nitride light emitter includes: a nitride semiconductor light-emitting element including an AlGaN substrate (0&#x2264;x&#x2264;1) and a multilayer structure above the AlGaN substrate; and a submount substrate on which the nitride semiconductor light-emitting element is mounted. The multilayer structure includes a first clad layer of a first conductivity type, a first light guide layer, a quantum-well active layer, a second light guide layer, and a second clad layer of a second conductivity type which are stacked sequentially from the AlGaN substrate. The multilayer structure and submount substrate are opposed to each other. The submount substrate comprises diamond. The nitride semiconductor light-emitting element has a concave warp on a surface closer to the AlGaN substrate.

Nitride light emitter

In a method for manufacturing a nitride semiconductor light-emitting element by splitting a semiconductor layer stacked substrate including a semiconductor layer stacked body with a plurality of waveguides extending along the Y-axis to fabricate a bar-shaped substrate, and splitting the bar-shaped substrate along a lengthwise split line to fabricate an individual element, the waveguide in the individual element has different widths at one end portion and the other end portion and the center line of the waveguide is located off the center of the individual element along the X-axis, and in the semiconductor layer stacked substrate including a first element forming region and a second element forming region which are adjacent to each other along the X-axis, two lengthwise split lines sandwiching the first element forming region and two lengthwise split lines sandwiching the second element forming region are misaligned along the X-axis.

Nitride semiconductor light-emitting element, method for manufacturing nitride semiconductor light-emitting element, and nitride semiconductor light-emitting device

A semiconductor light emitting element includes: a GaN substrate; a first semiconductor layer located above the GaN substrate and including a nitride semiconductor of a first conductivity type; an active layer located above the first semiconductor layer and including a nitride semiconductor including Ga or In; an electron barrier layer located above the active layer and including a nitride semiconductor including Al; and a second semiconductor layer located above the electron barrier layer and including a nitride semiconductor of a second conductivity type. The electron barrier layer includes: a first region having an Al composition ratio changing at a first change rate; and a second region having an Al composition ratio changing at a second change rate larger than the first change rate. In the first second regions, the Al composition ratio monotonically increases at the first change rate in the direction from the active layer toward second semiconductor layer.

Semiconductor light emitting element

A semiconductor laser device includes: a first semiconductor layer on a first conductivity side; a second semiconductor layer on the first conductivity side; an active layer; a third semiconductor layer on a second conductivity side different from the first conductivity side; and a fourth semiconductor layer on the second conductivity side. Eg2&#x3c;Eg3 is satisfied, where Eg2 and Eg3 denote maximum values of band gap energy of the second semiconductor layer and the third semiconductor layer, respectively. The third semiconductor layer includes a first region layer in which band gap energy monotonically decreases toward the fourth semiconductor layer. N2&#x3e;N3 is satisfied, where N2 denotes an impurity concentration of the second semiconductor layer, and N3 denotes an impurity concentration of the third semiconductor layer.

Semiconductor laser device, semiconductor laser module, and laser light source system for welding

A semiconductor laser device includes: a first conductivity side semiconductor layer, an active layer; and a second conductivity side semiconductor layer. The second conductivity side semiconductor layer includes a first semiconductor layer and a second semiconductor layer, the first semiconductor layer being closer to the active layer than the second semiconductor layer is. The second semiconductor layer defines a width of a current injection region for injecting current into an optical waveguide. The current injection region includes a width varying region in which a width varies. S&#x3e;S, where Sdenotes a width of the width varying region on a front end face side, and Sdenotes a width of the width varying region on a rear end face side.

A nitride-based light-emitting device includes, on a GaN substrate: a first-conductivity-side first semiconductor layer; an active layer; and a second-conductivity-side first semiconductor layer, in the stated order, and further includes an electron barrier layer of a second conductivity type between the active layer and the second-conductivity-side first semiconductor layer, the electron barrier layer including a nitride-based semiconductor containing at least Al. The electron barrier layer has a first region in which an Al composition changes. The Al composition in the first region monotonically increases in a direction from the active layer to the second-conductivity-side first semiconductor layer. An impurity concentration in the second-conductivity-side first semiconductor layer is lower in a region nearer the electron barrier layer than in a region farther from the electron barrier layer.

Nitride-based light-emitting device

A light emitting element according to the present disclosure includes: a GaN substrate; a first strain correction layer disposed above the GaN substrate and including InGaN of a first conductivity type where x is greater than 0 and less than or equal to 1; a first low refractive index layer disposed above the first strain correction layer, including InGaAlN of the first conductivity type, and having relationships of (a/0.98)+(b/0.8)&#x2265;1, (a/1.02)+(b/0.85)&#x2264;1, and (a/1.03)+(b/0.68)&#x2265;1; a first clad layer disposed above the first low refractive index layer, including AlGaN of the first conductivity type where z is greater than or equal to 0.03 and less than or equal to 0.06, and having a refractive index higher than a refractive index of the first low refractive index layer; and an active layer disposed above the first clad layer.

Light emitting element

A semiconductor light emitting element includes a substrate including GaN, a first cladding layer provided over the substrate, a quantum well active layer provided over the first cladding layer, a second cladding layer provided over the quantum well active layer, and a first refractive index correction layer provided between the substrate and the first cladding layer. The first refractive index correction layer includes a layer of InAlGaN (where x+y&#x3c;1), and x and y satisfy the relations x/1.05+y/0.69&#x3e;1, x/1.13+y/0.49&#x3e;1, or x/1.54+y/0.24&#x3e;1, and the relations x/0.91+y/0.75&#x2267;1 and x/1.08+y/0.91&#x2266;1.

In a semiconductor light-emitting element, a first cladding layer in a first conductive type, a quantum well active layer, and a second cladding layer in a second conductive type are stacked on a semiconductor substrate in this order. A ridge-shaped stripe formed at the second cladding layer forms a waveguide. Rf&#x3c;Rr and Wf&#x3e;Wr are satisfied, where the width of the ridge-shaped stripe at a front end face from which laser light is output is represented by Wf, the width of the ridge-shaped stripe at a rear end face is represented by Wr, the reflectance of the front end face is represented by Rf, and the reflectance of the rear end face is represented by Rr. Light in a fundamental transverse mode, a first high-order transverse mode, a second high-order transverse mode, and a third high-order transverse mode is guided in the waveguide.

Semiconductor light-emitting element

A semiconductor laser apparatus includes, on a substrate, a first-conductivity type layer, an active layer, a second-conductivity type layer having a ridge extending along an optical waveguide direction, and a current blocking layer formed on sides of the ridge. The ridge is disposed to separate the substrate into a first region having a first width, and a second region having a second width greater than the first width, in a direction perpendicular to the optical waveguide direction. The second-conductivity type layer has a shock attenuating portion having a height greater than or equal to that of the ridge, on sides of the ridge. In the second region, a trench extending from an upper surface of the shock attenuating portion, penetrating at least the active layer, and reaching the first-conductivity type layer, is formed along the optical waveguide direction.

Semiconductor laser apparatus

A semiconductor laser device includes an n-type clad layer, an active layer, and a p-type clad layer having a ridge and wing regions. The wing regions are provided with a first trench present on one side of the ridge and a second trench provided on the other side thereof being interposed therebetween. A reflectivity Rf at a front end face of a resonator, a reflectivity Rr at a rear end face of the resonator, a minimum value Wof a width of the first trench in a region adjacent to the front end face, a minimum value Wof a width of the second trench in the region adjacent to the front end face, a width Wof the first trench at the rear end face, and a width Wof the second trench at the rear end face satisfy Rf&#x3c;Rr, W&#x3c;Wand W&#x3c;WA width Wf of the ridge at the front end face, and a width Wr of the ridge at the rear end face satisfy Wf&#x3e;Wr. The ridge includes a region where a width decreases with distance from the front end side toward the rear end side.

Semiconductor laser device

A semiconductor laser device has a red laser element and an infrared laser element on a substrate. The red laser element has a double hetero structure in which an InGaP-based or AlGaInP-based active layer is interposed between a first conductivity type cladding layer and a second conductivity type cladding layer having a ridge. The infrared laser element has a double hetero structure in which a GaAs-based or AlGaAs-based active layer is interposed between a first conductivity type cladding layer and a second conductivity type cladding layer having a ridge. Provided that a first electrode formed over the second conductivity type cladding layer has a width Win a direction perpendicular to a cavity length direction and a second electrode formed over the second conductivity type cladding layer has a width Win a direction perpendicular to a cavity length direction, the relations of W&#x3e;Wand 80 &#x3bc;m&#x2267;W&#x2267;60 &#x3bc;m are satisfied.

A semiconductor laser devicehaving a ridge stripe structure comprises: an n-type clad layerhaving a protrusion; and an n-type current block layercovering the clad layer, except the upper surface of the protrusion. When the width of the upper surface is W, the distance between front and rear cleavage planes is L, the width of the upper surface at the front cleavage plane is Wf, and the width of the upper surface at the rear cleavage is Wr. In a range where a distance from the front cleavage plane is shorter than or equal to L/2, an area Sc of the upper surface is in a range of L/8&#xd7;(3Wf+Wr)&#x3c;Sc&#x2266;L/2&#xd7;Wf, and W in an arbitrary position in the range is in a range of &#xbd;(Wf+Wr)&#x3c;W&#x2266;Wf.

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Nara, Japan

Toru Takayama