Semiconductor Energy Laboratory Co., Ltd.

Nikon Corporation

Kabushiki Kaisha Toshiba

Sharp Kabushiki Kaisha Corporation

Nippon Steel & Sumitomo Metal Corporation

University of Colorado

Sharp Corporation

Toru Takayama

Shunpei Yamazaki

Junya Maruyama

Yumiko Ohno

Yuugo Goto

Hongyong Zhang

Yasuhiko Takemura

Yasuyuki Arai

Satoshi Murakami

Hideki Uochi

Kengo Akimoto

Hideaki Kuwabara

Hisashi Ohtani

Akiharu Miyanaga

Toshiji Hamatani

Hideomi Suzawa

Atsuo Isobe

Naoki Hirose

Koji Ono

Mai Akiba

Keiji Sato

Masakazu Murakami

Jun Koyama

Masayuki Sakakura

Takeshi Fukunaga

Hiroki Adachi

Takuya Tsurume

Hirokazu Yamagata

Tatsuya Arao

Tetsuji Yamaguchi

Taketomi Asami

Naoya Sakamoto

Mayumi Mizukami

Etsuko Fujimoto

Junichi Koezuka

Noriko Shibata

Takashi Inujima

Hajime Kimura

Akio Nakagawa

Osamu Nakamura

Mitsunori Sakama

Shigenori Hayashi

Kazutoshi Nakamura

Toshiyuki Naka

Hideto Ohnuma

Naoto Kusumoto

Masahiko Hayakawa

Koji Dairiki

Hiroshi Shibata

Kazuo Nishi

Ritsuko Kawasaki

Toru Mitsuki

Takashi Inushima

Masato Yonezawa

Kiyoshi Kato

Mitsuhiro Ichijo

Tetsunori Maruyama

Kunihiro Fukino

Hitoshi Imanari

Toshihiko Saito

Takashi Hamada

Naoki Makita

Akio Endo

Koichiro Tanaka

Toshimitsu Konuma

Takeshi Osada

Takanori Matsuzaki

Akira Mase

Shinji Maekawa

Fumiaki Funada

Kenji Itoh

Akira Ishikawa

Tatsuo Morita

Gen Fujii

Toshio Watanabe

Keitaro Imai

Yukie Suzuki

Eiji Sugiyama

Tomohiko Omura

Ryosuke Watanabe

Masafumi Morisue

Masahiko Sato

Yuko Tachimura

Hiroyuki Sakayori

Masaya Kadono

Ippei Kobayashi

Yohei Kanno

Mutsuo Yamamoto

Junichiro Sakata

Yuji Arai

Kosei Noda

Satoshi Yamazaki

Takeshi Fukada

Hajime Tokunaga

Dragan Maksimovic

Seiji Yasumoto

Mitsufumi Codama

Yuki Imoto

Yoshiharu Shiokama

Nobumitsu Amachi

A structure for preventing deteriorations of a light-emitting device and retaining sufficient capacitor elements (condenser) required by each pixel is provided. A first passivation film, a second metal layer, a flattening film, a barrier film, and a third metal layer are stacked in this order over a transistor. A side face of a first opening provided with the flattening film is covered by the barrier film, a second opening is formed inside the first opening, and a third metal layer is connected to a semiconductor via the first opening and the second opening. A capacitor element that is formed of a lamination of a semiconductor of a transistor, a gate insulating film, a gate electrode, the first passivation film, and the second metal layer is provided.

Display device

There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for partially reducing contact property between a first material layer () and a second material layer () (laser light irradiation, pressure application, or the like) is performed before peeling, and then peeling is conducted by physical means. Therefore, sufficient separation can be easily conducted in an inner portion of the second material layer () or an interface thereof.

Peeling method and method of manufacturing semiconductor device

To realize a high-performance liquid crystal display device or light-emitting element using a plastic film. A CPU is formed over a first glass substrate and then, separated from the first substrate. A pixel portion having a light-emitting element is formed over a second glass substrate, and then, separated from the second substrate. The both are bonded to each other. Therefore, high integration can be achieved. Further, in this case, the separated layer including the CPU serves also as a sealing layer of the light-emitting element.

Semiconductor device and method for manufacturing the same

To provide a semiconductor device in which a layer to be peeled is attached to a base having a curved surface, and a method of manufacturing the same, and more particularly, a display having a curved surface, and more specifically a light-emitting device having a light emitting element attached to a base with a curved surface. A layer to be peeled, which contains a light emitting element furnished to a substrate using a laminate of a first material layer which is a metallic layer or nitride layer, and a second material layer which is an oxide layer, is transferred onto a film, and then the film and the layer to be peeled are curved, to thereby produce a display having a curved surface.

Vehicle, display device and manufacturing method for a semiconductor device

A first display element includes a first pixel electrode that reflects visible light, a liquid crystal layer, and a first common electrode that transmits visible light. A second display element includes a second pixel electrode that transmits visible light, a light-emitting layer, and a second common electrode that reflects visible light. A separation layer that reflects visible light is formed over a formation substrate, an insulating layer is formed over the separation layer, and the second display element is formed over the insulating layer. The formation substrate and a second substrate are bonded to each other. Then, the formation substrate and the separation layer are separated from each other. The exposed separation layer is processed into the first pixel electrode. The liquid crystal layer is positioned between the first common electrode and the first pixel electrode and a first substrate and the second substrate are bonded to each other.

Display device including two display elements, display module, electronic device, and method for manufacturing display device

A semiconductor device having a semiconductor element (a thin film transistor, a thin film diode, a photoelectric conversion element of silicon PIN junction, or a silicon resistor element) which is light-weight, flexible (bendable), and thin as a whole is provided as well as a method of manufacturing the semiconductor device. In the present invention, the element is not formed on a plastic film. Instead, a flat board such as a substrate is used as a form, the space between the substrate (third substrate ()) and a layer including the element (peeled layer ()) is filled with coagulant (typically an adhesive) that serves as a second bonding member (), and the substrate used as a form (third substrate ()) is peeled off after the adhesive is coagulated to hold the layer including the element (peeled layer ()) by the coagulated adhesive (second bonding member ()) alone. In this way, the present invention achieves thinning of the film and reduction in weight.

Semiconductor device and method of manufacturing the same

The present invention provides a peeling off method without giving damage to the peeled off layer, and aims at being capable of peeling off not only a peeled off layer having a small area but also a peeled off layer having a large area over the entire surface at excellent yield ratio. The metal layer or nitride layeris provided on the substrate, and further, the oxide layerbeing contact with the foregoing metal layer or nitride layeris provided, and furthermore, if the lamination film formation or the heat processing of 500&#xb0; C. or more in temperature is carried out, it can be easily and clearly separated in the layer or on the interface with the oxide layerby the physical means.

Semiconductor device and peeling off method and method of manufacturing semiconductor device

The light-emitting apparatus comprising thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer on the upper and side surfaces of the second organic insulation layer and having an opening over the anode, an organic compound layer in contact with the anode and the fourth inorganic insulation layer and containing light-emitting material, and a cathode in contact with the organic compound layer, wherein the third and the fourth inorganic insulation layers comprise silicon nitride or aluminum nitride.

Light emitting apparatus and method for manufacturing the same

A light emitting device having high definition, a high aperture ratio, and high reliability is provided. The present invention achieves high definition and a high aperture ratio with a full color flat panel display using red, green, and blue color emission light by intentionally forming laminate portions, wherein portions of different organic compound layers of adjacent light emitting elements overlap with each other, without depending upon the method of forming the organic compound layers or the film formation precision.

Light emitting device, method of manufacturing the same, and manufacturing apparatus therefor

Growing community of inventors

Kanagawa, Japan

Toru Takayama