Mitsubishi Denki Kabushiki Kaisha

Toru Takahama

Hiroshi Ohnishi

Takeshi Iwamoto

Shigeo Sasaki

Yoshihiko Kusakabe

Kouichirou Tsutahara

Nobuyuki Kosaka

Kazuo Yoshida

Yoshimi Kinoshita

Toshihiko Noguchi

Kenichiro Yamanishi

Taizo Eshima

Tomoyuki Kanda

Hideki Komori

Katsuhisa Kitano

Susumu Hoshinouchi

Nobuyuki Zumoto

Noriko Morita

It is an object of the present invention to obtain a vacuum chucking which can vacuum suck a wafer even if dusts attach thereon. The main body of vacuum chuck (101) has a plurality of block grooves (125) on the surface on which the wafer (1) is sucked and fixed, in which vacuum evacuation paths (105) each for vacuum evacuating each block groove (125) are provided for each block groove (125). When the wafer (1) is sucked and fixed under low pressure, even if the degree of vacuum in one of the block grooves (125) decreases due to attachment of dusts on part of the suction surface, or the like, the wafer (1) can surely be sucked and held.

Semiconductor producing apparatus, and wafer vacuum chucking device, gas

It is an object of the present invention to obtain a vacuum chucking which can vacuum suck a wafer even if dusts attach thereon. The main body of vacuum chuck (101) has a plurality of block grooves (125) on the surface on which the wafer (1) is sucked and fixed, in which vacuum evacuation paths (105) each for vacuum evacuating each block groove (125) are provided for each block groove (125). When the wafer(1) is sucked and fixed under low pressure, even if the degree of vacuum in one of the block grooves (125) decreases due to attachment of dusts on part of the suction surface, or the like, the wafer (1) can surely be sucked and held.

Semiconductor producing apparatus comprising wafer vacuum chucking device

A thin film forming apparatus of the present invention comprises: a reaction chamber for receiving therein a substrate and a thin film forming gas; an ultraviolet laser beam oscillator for generating an ultraviolet laser beam for causing dissociation of the thin film forming gas to thereby form a thin film over the surface of the substrate; and a plasma generator for generating ions for controlling growth of a thin film.

Thin film forming apparatus

Growing community of inventors

Amagasaki, Japan

Toru Takahama