Semiconductor Energy Laboratory Co., Ltd.

Toru Sonoda

Satoshi Inoue

Tomoya Aoyama

Kohei Yokoyama

Hideki Uchida

Rena Tsuruoka

In a method for manufacturing a light-emitting device according to an embodiment of the present invention, one surface of a first substrate including a reflective layer including an opening, a light absorption layer formed over the reflective layer to cover the opening in the reflective layer, a protective layer formed over the light absorption layer and including a groove at a position overlapped with the opening in the reflective layer, and a material layer formed over the protective layer and a deposition surface of a second substrate are disposed to face each other and light irradiation is performed from the other surface side of the first substrate, so that an EL layer is formed in a region on the deposition surface of the second substrate, which is overlapped with the opening in the reflective layer.

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Nara, Japan

Toru Sonoda