Toyota Jidosha Kabushiki Kaisha

Denso Corporation

Kabushiki Kaisha Toyota Chuo Kenkyusho

Toru Onishi

Nobuki Tada

Junji Ito

Nobuhiro Ishida

Noriko Yasutani

Rie Hirao

Katsuhiro Kutsuki

Satoshi Katahira

Risa Nagura

Yusuke Yamashita

Yasushi Urakami

Kenro Tokuhiro

Chie Imamura

Atsushi Onogi

Shin Kusase

Yuichi Takeuchi

Yukihiko Watanabe

Sachiko Aoi

Takeo Maekawa

Kensaku Yamamoto

Shuhei Mitani

Tadashi Misumi

Takehiro Kato

Shuhei Oki

Tomoharu Ikeda

Takashi Shimamura

Hibiki Matsushita

Kunihito Kato

Emiko Tominaga

Rahman Md Tasbir

Yuichiro Matsuura

A stable transformant, in which a gene of interest is incorporated into the genome, is simply and efficiently produced. A method for producing a transformant, comprising a step of introducing into a host, linear genome-introduced nucleic acid fragment(s) comprising a gene of interest and a helper plasmid for transformation having a pair of homologous recombination sequences for incorporation of the linear genome-introduced nucleic acid fragment(s), and then selecting a transformant, in which the gene of interest is incorporated into the predetermined position in the host genome and the gene of interest is expressed therein.

Helper plasmid for transformation, method for producing transformant using the same, and transformation method

This invention is intended to improve the ethanol fermentation ability of a yeast strain having xylose-metabolizing ability with the use of a mutant gene encoding a mutant protein comprising a consensus sequence comprising a substitution of amino acid in the 30th position in SEQ ID NO: 1, amino acid in the 43rd position in SEQ ID NO: 4, and amino acid in the 31st position in SEQ ID NO: 7 with other amino acid residues.

Mutant gene associated with improvement in ethanol productivity via ethanol fermentation and method for producing ethanol using the same

A manufacturing method of a silicon carbide semiconductor device may include: forming a gate insulating film on a silicon carbide substrate; and forming a gate electrode on the gate insulating film. The forming of the gate insulating film may include forming an oxide film on the silicon carbide substrate by thermally oxidizing the silicon carbide substrate under a nitrogen atmosphere.

Manufacturing method of silicon carbide semiconductor device and silicon carbide semiconductor device

The present disclosure is intended to reduce the amount of glycerin produced as a by-product in ethanol fermentation to a significant extent using a transgenic yeast comprising a gene having the pentose assimilating ability and encoding glycerin dehydrogenase having a mitochondrial transport signal introduced thereinto.

Transgenic yeast and method for producing ethanol using the same

In an end portion of a trench, an opening where the end portion of the trench is exposed is formed in a lead-out electrode, a side surface of the trench gate electrode on a top surface side of a semiconductor substrate is spaced from a trench side surface, and a range adjacent to a boundary line positioned between a top surface of the semiconductor substrate and the trench side surface is covered with a laminated insulating film configured such that an interlayer insulating film is laminated on a gate insulating film. This makes it possible to prevent dielectric breakdown of an insulating film.

Semiconductor device

An acetic acid metabolizing ability of a recombinant yeast strain having xylose-metabolizing ability is to be improved. In such a recombinant yeast strain having xylose-metabolizing ability, the acetaldehyde dehydrogenase gene has been introduced and a gene encoding NADH dehydrogenase involved in reoxidation of cytoplasmic NADH on the mitochondrial outer membrane has been suppressed.

Recombinant yeast and a method for producing ethanol using the same

A eukaryotic cell having xylose utilization ability. Provided is a protein that has xylose isomerase activity and has an amino acid sequence including, when aligned with an amino acid sequence expressed by SEQ ID NO:1, the 1st to 6th motifs expressed respectively by SEQ ID NOs:2 to 7 from the N-terminus side in the order described, and having, in place of asparagine (N) in an amino acid sequence of the 6th motif, another amino acid.

Protein having xylose isomerase activity and use of same

Technique disclosed herein can suppress performance variation among semiconductor devices to be manufactured upon manufacturing each semiconductor device by forming diffusion layer by ion implantation to semiconductor substrate after etching. A semiconductor device includes a semiconductor substrate. The semiconductor substrate includes an emitter region, a top body region, a barrier region, a bottom body region, a drift region, a collector region, a trench, a gate insulating film, and a gate electrode. A front surface of the gate electrode is provided at a deeper position than a front surface of the semiconductor substrate. Within the gate electrode, a front surface of a first portion at a widthwise center of a trench is provided at a shallower position than a front surface of a second portion in contact with the gate insulating film.

Semiconductor device with a gate electrode positioned in a semiconductor substrate

A switching device may include a semiconductor substrate; gate trenches; bottom insulating layers covering bottom surfaces of the gate trenches; gate insulating layers covering side surfaces of the gate trenches; and gate electrodes arranged in the gate trenches. The gate insulating layers in a center portion may have a first thickness and a first dielectric constant, and one or more of the gate insulating layers in a peripheral portion may have, within at least a part of the peripheral portion, a second thickness thicker than the first thickness and a second dielectric constant greater than the first dielectric constant. The semiconductor substrate may include a first region being in contact with the gate insulating layers, a body region being in contact with the gate insulating layers under the first region, and a second region being in contact with the gate insulating layers under the body region.

Switching device

A semiconductor device includes a semiconductor substrate of silicon carbide, and a temperature sensor portion. The semiconductor substrate includes a portion in which an n-type drift region and a p-type body region are laminated. The temperature sensor portion is disposed in the semiconductor substrate and is separated from the drift region by the body region. The temperature sensor portion includes an n-type cathode region being in contact with the body region, and a p-type anode region separated from the body region by the cathode region.

Temperature sensing semiconductor device

The invention is intended to improve xylose assimilation ability and ethanol fermentation ability in a xylose-assimilating yeast into which a xylose isomerase gene has been introduced. The amount of NADH produced by the recombinant yeast into which the xylose isomerase gene had been introduced as a result of the enzymatic reaction of acetohydroxy acid reductoisomerase is lowered.

Recombinant yeast and method for producing ethanol using the same

The invention is intended to metabolize acetic acid and to lower acetic acid concentration in a medium at the time of xylose assimilation and ethanol fermentation by a yeast strain having xylose-metabolizing ability. To this end, a recombinant yeast strain having xylose-metabolizing ability and comprising an acetaldehyde dehydrogenase gene introduced thereinto is cultured in a medium containing cellulose, cellulase, and xylose to perform ethanol fermentation.

Growing community of inventors

Toyota, Japan

Toru Onishi