Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Toru Okino

Mitsuyoshi Mori

Yutaka Hirose

Yoshihisa Kato

Yusuke Otake

Kazuo Fujiwara

Tsuyoshi Tanaka

Yoshihiro Sato

Ryohei Miyagawa

Yusuke Sakata

Yoshiyuki Ohmori

Yasuhiro Shimada

Daisuke Ueda

Hideto Motomura

Takumi Yamaguchi

Motonori Ishii

Hiroyuki Handa

Seiji Yamahira

Yoshihide Sawada

Toshinobu Matsuno

Shigeru Saitou

Yuta Moriura

Yohei Morishita

Yoshitaka Nakamura

Toru Sakuragawa

Shota Yamada

Akio Oki

Satoshi Morishita

Yasufumi Kawai

Hiroyuki Hagino

Shinzou Kouyama

Manabu Kamoshida

A flame detection system includes a determiner and an outputter. The determiner is configured to, when image processing performed on image data detects ultraviolet light, determine that a light emitting source is a fire flame. The outputter is configured to output a determination result by the determiner.

Flame detection system, reporting system, flame detection method, and non-transitory storage medium

A travel sickness estimation system includes an estimation unit and an output unit. The estimation unit is configured to perform estimation processing of estimating, based on person information indicating conditions of a person who is on board a moving vehicle, whether or not the person is in circumstances that would cause travel sickness for him or her. The output unit is configured to output a result of the estimation processing performed by the estimation unit.

Travel sickness estimation system, moving vehicle, travel sickness estimation method, and travel sickness estimation program

An imaging system includes: an image sensor sensitive to ultraviolet light and visible light; a lens configured to focus light from a subject onto the image sensor; and an image processor configured to process image signals output from the image sensor. The image processor obtains the difference between image signals Aand Aoutput from the image sensor at times t1 and t2, respectively. If the differential signal Ais greater than or equal to a predetermined value, the image processor determines that light from the subject contains the ultraviolet light, and generates an image signal CI based on the differential signal A

Imaging system, and method for specifying UV emission location using same

A gas sensor includes: a cell array which includes a plurality of cells disposed in rows and columns; a read-out circuit which reads out signals from the plurality of cells; and a signal processor which processes the signals read out. Each of the plurality of cells includes: a gas molecule detector which is electrically isolated between adjacent ones of the plurality of cells; and an amplifier circuit which is electrically connected to the gas molecule detector.

Gas sensor and gas sensing system

An electronic prepared slide includes: an image sensor that has a light receiving surface and receives, on the light receiving surface, light that has passed through a specimen disposed above the light receiving surface; and a removable nonvolatile transparent film that is disposed on the light receiving surface and seals the light receiving surface.

Electronic prepared slide, solid state imaging element, and electronic prepared slide assembly method

A solid-state imaging device according to the present disclosure includes: a charge storage region that stores a signal charge obtained through photoelectric conversion in a photoelectric conversion film; an amplification transistor that amplifies the signal charge stored in the charge storage region in a corresponding pixel; a contact plug that is electrically connected to the charge storage region and contains a semiconductor material; and a line that is disposed above the contact plug and contains a semiconductor material. The contact plug and the charge storage region are electrically connected, and the contact plug and a gate electrode of the amplification transistor are electrically connected via the line.

Solid-state imaging device

A solid-state imaging device in which a plurality of pixels are two-dimensionally arranged includes a silicon layer; a plurality of photodiodes which are formed in the silicon layer to correspond to the pixels and generate signal charges by performing photoelectric conversion on incident light; and a plurality of color filters formed above the silicon layer to correspond to the plurality of the pixels. A protrusion is formed in a region on a side of the silicon layer between adjacent ones of the color filters wherein the protrusion has a refractive index lower than refractive indices of the adjacent ones of the color filters and, each of the color filters is in contact with the adjacent ones of the color filters, above the protrusion.

Solid-state imaging device and method of manufacturing the solid-state imaging device

A solid-state imaging device includes: a substrate; an insulator layer formed on the substrate; a semiconductor layer formed on the insulator layer; and a silicon layer formed on the semiconductor layer. The silicon layer includes a plurality of pixels each including a photoelectric converter configured to convert light into signal charge, and a circuit configured to read the signal charge, and a refractive index of the insulator layer is lower than a refractive index of the semiconductor layer.

Solid-state imaging device and method for fabricating the same

Solid-state imaging device of the present invention is a backside-illumination-type solid-state imaging device including wiring layer formed on first surface side of semiconductor substrate; and light receiving section that photoelectrically converts light incident from second surface side that is opposite from first surface side, wherein spontaneous polarization film formed of a material having spontaneous polarization is formed on a light receiving surface of light receiving section. Accordingly, a hole accumulation layer can be formed on the light receiving surface of light receiving section, and a dark current can be suppressed.

A solid-state imaging device according to the present invention includes pixels which are arranged two-dimensionally and each of which includes: a light absorbing layer that converts light into signal charges; a signal read circuit to read out the signal charges, the signal read circuit being formed on a side opposite to a light incident plane side of the light absorbing layer; a metal layer that is formed on the light incident plane side of the light absorbing layer, the metal layer having an aperture to transmit, into the light absorbing layer, light of a wavelength range depending on a shape of the aperture, a driving circuit that applies a voltage to the metal layer to generate, in the light absorbing layer, a potential gradient to collect the signal charges.

A solid-state imaging device includes semiconductor substrate; a plurality of photoelectric conversion sections of n-type that are formed at an upper part of semiconductor substrate and arranged in a matrix; output circuit that is formed on a charge detection surface that is one surface of semiconductor substrate and detects charges stored in photoelectric conversion sections; a plurality of isolating diffusion layers of a p-type that are formed under output circuit and include high concentration p-type layers adjacent to respective photoelectric conversion sections; and color filters formed on a light incident surface that is the other surface opposing the one surface of semiconductor substrate and transmit light with different wavelengths. Shapes of respective photoelectric conversion sections correspond to color filters and differ depending on the high concentration p-type layer configuring isolating diffusion layer.

In each of pixelsarranged in an array pattern, an insulating isolation partelectrically isolates adjacent photoelectric conversion elements, and the photoelectric conversion elementand an amplifier transistor. The insulating isolation partconstitutes a first region A between the photoelectric conversion elementswhere the amplifier transistoris not arranged, and a second region B between the photoelectric conversion elementswhere the amplifier transistoris arranged. A low concentration first isolation diffusion layeris formed below the insulating isolation partconstituting the first region A, and a high concentration second isolation diffusion layerand a low concentration first isolation diffusion layerare formed below the insulating isolation partconstituting the second region B. A source/drain region of the amplifier transistorin the second region B is formed in a well regionformed simultaneously with the second isolation diffusion layer

Solid state imaging device

Each of pixelsarranged in an array pattern includes a photoelectric conversion element, a transfer transistorfor transferring charges to a floating diffusion layer, and an amplifier transistorfor outputting the transferred charges to an output line. An insulating isolation partisolates the adjacent photoelectric conversion elements, and isolates the photoelectric conversion elementand the amplifier transistor. The insulating isolation partconstitutes a first region A between the photoelectric conversion elementswhere the amplifier transistoris not arranged, and a second region B between the photoelectric conversion elementswhere the amplifier transistoris arranged. First and second isolation diffusion layersandare formed below the insulating isolation part, and the second isolation diffusion layeris wider than the first isolation diffusion layerin the first region A.

Solid state imaging device including source/drain region of amplifier transistor being disposed in isolation diffusion layer

A solid state imaging device includes a pixel having a photoelectric conversion element formed on a semiconductor substrate. The photoelectric conversion element includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type formed on the first semiconductor layer and forming a junction therebetween; a third semiconductor layer formed on the second semiconductor layer and having a smaller band gap energy than the second semiconductor layer, the third semiconductor layer being made of a single-crystal semiconductor and containing an impurity; and a fourth semiconductor layer of the first conductivity type covering a side surface and an upper surface of the third semiconductor layer. Provision of the fourth semiconductor layer can reduce a current flowing in dark conditions.

Growing community of inventors

Osaka, Japan

Toru Okino