National Institute of Information and Communications Technology, Incorporated Administrative Agency

Zaidan Hojin Handotai Kenkyu Shinkokai

Toru Oizumi

Jun-ichi Nishizawa

Toru Kurabayashi

Kyouzou Kanamoto

The ultra high-speed vertical short channel insulated-gate static induction transistor with uniform operating characteristic which has the drain layerconsisting of an epitaxial single crystal layer on the main surfaceof substrate, the channel layerwith thickness 1000 &#x212b; or less on the drain layer, the source layerconsisting of an epitaxial single crystal layer on the channel layer, and the insulated-gatesandon the sidewalls of the drain, the channel, and the source layers. Since the thickness of 1000 &#x212b; or less is accurately controlled using the molecular layer epitaxial method and the channel layeris grown up, the X-ray photolithography is not needed. Since the gate oxide film is formed by low temperature CVD using active oxygen, impurity re-distribution does not occur.

Growing community of inventors

Tokyo, Japan

Toru Oizumi