Kyocera Corporation

Toru Nakayama

Norimitsu Fukami

Tetsuaki Ozaki

Yuya Furukubo

[Object] To provide a cell, a cell stack, an electrochemical module and an electrochemical apparatus that can suppress decrease in output power. [Solution] A cell includes a solid oxide electrolyte layer, a first electrode layeron one of the main surfaces of the electrolyte layer, and an second electrode layeron the other. The second electrode layercontains a plurality of pores, and the pore size distribution observed at a section of the second electrode layer has at least three peaks (a first peak p, a second peak pand a third peak p). This structure leads to a cell, a cell stack, an electrochemical module and an electrochemical apparatus that can suppress decrease in output power.

Cell, cell stack unit, electrochemical module, and electrochemical apparatus

[Object] To provide a cell, a cell stack, an electrochemical module and an electrochemical apparatus that can suppress decrease in output power. [Solution] A cell includes a solid oxide electrolyte layer, a fuel electrode layeron one of the main surfaces of the electrolyte layer, and an oxygen electrode layeron the other. The oxygen electrode layercontains a plurality of pores, and the pore size distribution observed at a section of the oxygen electrode layer has at least three peaks (a first peak p, a second peak pand a third peak p). This structure leads to a cell, a cell stack, an electrochemical module and an electrochemical apparatus that can suppress decrease in output power.

A photoelectric converter includes two semiconductor layers forming a p/n junction as a photoelectric conversion layer. At least one semiconductor layer of the two semiconductor layers is a quantum dot integrated film, and the quantum dot integrated film includes two or greater quantum dot layers having different energy levels. In a case that the quantum dot integrated film is a p-type, a quantum dot layer having a large difference between an energy level (B) of a valence band and a Fermi level (E) is disposed closer to a p/n junction surface.

Photoelectric converter with a multi-layered quantum dot film

A mullite-based body including mullite, alumina, and titanium manganese oxide is disclosed. The mullite-based sintered body includes mullite of 79.3 to 85.2 mass %, alumina of 14.2 to 19.8 mass % and MnTiOof 0.6 to 1.1 mass %. The mullite-based sintered body has a relative density of 96% or higher. A circuit board and a probe card are also disclosed. The circuit board includes the mullite-based sintered body. The probe card includes the wiring substrate; a surface wiring layer on a surface of the wiring substrate; and a measuring terminal electrically coupled to the surface wiring layers for measuring the electrical characteristics of an electric circuit.

Growing community of inventors

Kirishima, Japan

Toru Nakayama