Kabushiki Kaisha Toshiba

Toru Mikami

Shinichi Ito

Toshiya Kotani

Yuichiro Yamazaki

Kei Hayasaki

Toru Koike

Toshihiko Kikuchi

In accordance with an embodiment, a measurement apparatus includes a library creation unit, a spectral profile acquiring unit, and a measurement unit. The library creation unit creates a library in which a layer stack model is matched to a theoretical profile regarding a pattern of stacked layers. The spectral profile acquiring unit acquires an actual measured profile by applying light to a measurement target pattern obtained when the pattern is actually created. The measurement unit measures the sectional shape of the measurement target pattern by performing fitting of the theoretical profile to the actual measured profile. The layer stack model is created by calculating a feature value that reflects the intensity of reflected light from an interface for each of the layers, determining a priority order of analysis from the feature value, and sequentially performing fitting of the theoretical profile to the measured profile in the determined priority order.

Measurement apparatus and measurement method

Wavelength dispersion of intensity of light reflected from an evaluation object is measured. A complex refractive index of a substance forming the evaluation object and the environment are prepared. Virtual component ratios comprising a mixture ratio of the substances forming the evaluation object and the environment are prepared. Reflectance wavelength dispersions to the virtual component ratios are calculated. Similar reflectance wavelength dispersions having a small difference with the measured wavelength dispersion are extracted from the reflectance wavelength dispersions. Weighted average to the virtual component ratios used for calculating the similar reflectance wavelength dispersions are calculated to obtain a component ratio of the substance forming the evaluation object and the environment so that weighting is larger when the difference is smaller. A structure of the evaluation object is determined from the calculated component ratio.

Structure inspection method, pattern formation method, process condition determination method and resist pattern evaluation apparatus

A method monitors a thickness of a subject film deposited on an underlying structure, the underlying structure contains at least one thin film formed on a substrate. The method includes determining thickness data of the underlying structure and storing the thickness data of the underlying structure in a thickness memory; measuring profile of optical spectrum of the subject film on the underlying structure; reading the thickness data of the underlying structure from the thickness memory; calculating theoretical profiles of the optical spectrum of the subject film based upon corresponding candidate film thicknesses of the subject film and the thickness data of the underlying structure; and searching a theoretical profile of the subject film, which is closest to the measured profile of optical spectrum of the subject film so as to determine a thickness of the subject film.

Method for monitoring film thickness, a system for monitoring film thickness, a method for manufacturing a semiconductor device, and a program product for controlling film thickness monitoring system

A method monitors a thickness of a subject film deposited on an underlying structure, the underlying structure contains at least one thin film formed on a substrate. The method includes determining thickness data of the underlying structure and storing the thickness data of the underlying structure in a thickness memory; measuring profile of optical spectrum of the subject film on the underlying structure; reading the thickness data of the underlying from the thickness memory; calculating theoretical profiles of the optimal spectrum of the subject film based upon corresponding candidate film thicknesses of the subject film and the thickness data of the underlying structure; and searching a theoretical profile of the subject film, which is closest to the measured profile of optical spectrum of the subject film so as to determine a thickness of the subject film.

A dimension measurement method includes irradiating a measurement mark on a sample on which a pattern to be measured is formed with light from a measurement direction, detecting reflected diffracted light from the measurement mark to measure intensity thereof, and calculating a shape parameter of the pattern on the basis of the measured intensity, the measurement mark having measurement patterns which have the same shape as at least part of the pattern and are arranged in rows and columns, the columns being composed of the measurement patterns disposed with a predeter period in the direction perpendicular to the measurement direction, wherein a relation between a wavelength of the light and the period is adjusted so that the measurement mark generates the reflected diffracted light substantially the same as reflected diffracted light which would be generated when the column is assumed to be a continuous line pattern.

Dimension measurement method, method of manufacturing semiconductor device, dimension measurement apparatus and measurement mark

A film thickness measuring method comprises projecting white light onto a wafer with a film to be measured and sensing a first reflected light intensity from the wafer, determining the first reflected light intensity in the form of a first light intensity profile with wavelength as the abscissa axis and light intensity as the ordinate axis, projecting the white light onto a reference sample having the same structure as that of the underlying layer below the film and sensing a second reflected light intensity from the sample, determining the second reflected light intensity in the form of a second light intensity profile similarly to the first light intensity profile, calculating a normalized light intensity profile by dividing the first light intensity profile by the second light intensity profile, and calculating the film thickness of the film to be measured from the normalized light intensity profile.

Film thickness measuring method and step measuring method

A mark position detecting system includes a light source for illuminating light on a mark for alignment measurement formed on a semiconductor substrate, a light detecting optical system and a measured light intensity profile preparing part, a theoretical light intensity profile preparing part, a light intensity profile comparison part. The measured light intensity profile preparation part prepares a measured light intensity profile denoting light intensity of reflected light from the mark from a detection result by the detecting optical system. The theoretical light intensity profile preparing part prepares a theoretical light intensity profile of the reflected light from a region of the mark where the intensity would change, using information on the shape and material of the mark. The light intensity profile comparison part compares the theoretical light intensity profile with the measured light intensity profile to detect the mark and misalignment.

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Fujisawa, Japan

Toru Mikami