Hamamatsu-photonics K.k.

Toyohashi University of Technology

Toru Matsumoto

Kazushige Koshikawa

Hironori Takahashi

Tomonori Nakamura

Koichi Endo

Yoichi Kawada

Takashi Yasuda

Akira Shimase

Shigeru Eura

Naohiro Hozumi

Takuto Matsui

An ultrasonic testing device having a packaged semiconductor device as a testing target, the device including: an ultrasonic oscillator disposed to face the semiconductor device; a pulse generator generating a driving signal that is used in the generation of an ultrasonic wave to be output from the ultrasonic oscillator; and an analysis unit analyzing an output signal that is output from the semiconductor device in accordance with the irradiation of the ultrasonic wave from the ultrasonic oscillator, in which the pulse generator sets an optimal frequency of the driving signal such that the absorption of the ultrasonic wave in the semiconductor device is maximized.

Ultrasonic testing device and ultrasonic testing method

A device analysis apparatus is a device analysis apparatus for determining a quality of a power semiconductor device, including an application unit that applies a voltage signal to the power semiconductor device, a light detection unit that detects light from the power semiconductor device at a plurality of detection positions and outputs detection signals based on detection results, and a determination unit that determines the quality of the power semiconductor device based on temporal changes of the detection signals.

Device analysis apparatus and device analysis method

Provided is an ultrasonic inspection device for inspecting a packaged semiconductor device, The ultrasonic inspection device including an ultrasonic transducer that is disposed to face the semiconductor device; a medium holding unit that is provided at an end of the ultrasonic transducer facing the semiconductor device and holds a medium through which ultrasonic waves are propagated; a stage that moves the position of the semiconductor device relative to the ultrasonic transducer; and an analysis unit that analyzes the reaction of the semiconductor device in accordance with input of the ultrasonic waves from the ultrasonic transducer.

Ultrasonic inspection device

Provided is a method for inspecting a semiconductor device which performs an inspection of a semiconductor device as an object to be inspected, including attaching an adhesive tape to a surface to be inspected of the semiconductor device, acquiring a first pattern image based on a light detected from a region including a surface of the surface to be inspected to which the adhesive tape is attached, inputting an electrical signal to the semiconductor device to which the adhesive tape is attached, acquiring a first heat generation image by detecting light according to heat radiation from the region including the surface to which the adhesive tape is attached in a state in which the electrical signal is input, and superimposing the first pattern image and the first heat generation image.

Method for inspecting semiconductor device

This ultrasonic inspection device, for inspecting a packaged semiconductor device, is provided with: an ultrasonic transducer which outputs ultrasonic waves to a semiconductor device; a receiver (a reflection detection unit) which detects reflected waves of the ultrasonic waves reflected on the semiconductor device; a stage which moves the positions of the semiconductor device relative to the ultrasonic transducer; a stage control unit which controls driving of the stage; and an analysis unit which analyzes the reaction of the semiconductor device to the input of the ultrasonic waves from the ultrasonic transducer. The stage control unit controls the distance between the semiconductor device and the ultrasonic transducer on the basis of a peak occurring in time waveform of the reflected wave detected by the receiver.

Ultrasonic inspection device and ultrasonic inspection method

A semiconductor device inspection apparatus is an apparatus for inspecting a semiconductor device which is an object to be inspected based on a result signal which is output in accordance with input of a test pattern signal to the semiconductor device, the apparatus including: an ultrasonic transducer, disposed to face the semiconductor device, which generates ultrasonic waves; a stage for moving a relative position of the semiconductor device and the ultrasonic transducer; a stimulation condition control unit for controlling a condition of stimulation by the ultrasonic waves applied to the semiconductor device; and an analysis unit for generating a measurement image based on the result signal which is output from the semiconductor device.

Semiconductor device inspection apparatus and semiconductor device inspection method

Probe light pulses output from a light source are input to an optical effect unit after the beam diameter is changed by a beam diameter changing optical system, the pulse front is tilted by a pulse front tilting unit, and the beam diameter is adjusted by a beam diameter adjusting optical system. To the optical effect unit, probe light pulses output from the beam diameter adjusting optical system are input, and an electromagnetic wave being an object to be detected is also input. Optical characteristics of the optical effect unit change due to propagation of the electromagnetic wave, and probe light pulses affected by the change in optical characteristics are output from the optical effect unit. The probe light pulses output from the optical effect unit are detected by a photodetector.

Growing community of inventors

Hamamatsu, Japan

Toru Matsumoto