Hitachi, Ltd.

Renesas Electronics Corporation

Renesas Technology Corp.

Hitachi Power Semiconductor Device, Ltd.

Other

Hitachi Device Engineering Co., Ltd.

Toru Masuda

Takahiro Nakamura

Katsuyoshi Washio

Kenichi Ohhata

Nobuhiro Shiramizu

Hiroshi Mori

Seiichi Hayakawa

Yuji Takayanagi

Hiroshi Kageyama

Hiroaki Nambu

Kazuo Kanetani

Ryoji Takeyari

Youji Idei

Ayumu Hatanaka

Takeshi Kusunoki

Yasushi Hatta

Daichi Kawamura

Masao Kondo

Satoru Akiyama

Akitoyo Konno

Katsumi Ishikawa

Takae Shimada

Akio Shima

Naoki Sakurai

Junpei Kusukawa

Norio Hayashi

Kunihiko Yamaguchi

Masamitsu Inaba

Kazutoshi Ogawa

Masamichi Tanabe

Tomomitsu Kitamura

Ryuusei Fujita

Nobuhiro Kasa

Eiji Ohue

Daisuke Ikarashi

Takashi Wada

Taizo Yoshikawa

There is provided a power semiconductor module with multiple semiconductor chips arranged in parallel on an insulated substrate, allowing for high density mounting of semiconductor chips and highly reliable with less difference in operating characteristics from one semiconductor chip to another. The above module includes an insulated substrate; a first conductive pattern laid out on the insulated substrate; multiple power semiconductor chips arranged on the first conductive pattern; a first wiring formed to bridge and directly connecting respective gate electrodes of the power semiconductor chips; and a second wiring formed to bridge and directly connecting respective source electrodes of the power semiconductor chips, wherein the first wiring is placed alongside of the second wiring and may be angled within 30 degrees with respect to the second wiring.

Power semiconductor module

To provide a semiconductor device signal transmission circuit for drive-control, a method of controlling a semiconductor device signal transmission circuit for drive-control, a semiconductor device, a power conversion device, and an electric system for a railway vehicle capable of preventing malfunction due to noise while speeding up or reducing loss of a switching operation. The semiconductor device signal transmission circuit for drive-control that is connected between a semiconductor device constituting an arm in a power conversion device and a drive circuit configured to drive the semiconductor device, including: an inductor; and an impedance circuit including a switch and connected in parallel with the inductor.

Semiconductor device signal transmission circuit for drive-control, method of controlling semiconductor device signal transmission circuit for drive-control, semiconductor device, power conversion device, and electric system for railway vehicle

The invention provides a gate drive device, a gate drive method, a power semiconductor module, and an electric power conversion device capable of reducing a negative gate surge voltage. The gate drive device drives a semiconductor device constituting an arm in an electric power conversion device. Before a turn-off start of a drive arm, in a counter arm, a voltage between one main terminal of the semiconductor device and a gate terminal of the semiconductor device is charged to a voltage value that is larger, in a positive direction, than a negative voltage of a negative gate power supply and smaller than a gate threshold voltage of the semiconductor device.

Gate drive device, gate drive method, power semiconductor module, and electric power conversion device

When a distance between an end portion of a brazing material and a downward extended line of a side surface of an insulating substrate is taken as 'a', and a distance between an end portion of a solder resist on the side of a solder and the downward extended line of the side surface of the insulating substrate is taken as 'b', the positional relationship a&#x3c;b is satisfied. The position of the end portion of the solder is regulated by the solder resist, and the position of the end portion of the brazing material on the side of the side surface of the insulating substrate is closer to the side of the side surface of the insulating substrate than to the position of the end portion of the solder on the side of the side surface of the insulating substrate.

An acoustic emission wave detection system and an acoustic emission wave detector are provided. The acoustic emission wave detection system includes an acoustic emission wave detector, a photoelectric converter, and a determination processor. The acoustic emission wave detector includes a housing, an optical fiber that guides light from a wideband light source into the housing, and an FBG housed in the housing and having a diffractive grating that reflects light guided into the housing. The FBG is fixed on a side of the other end in the housing such that the light guided into the housing is received by one end thereof. An acoustic emission wave from a high-voltage apparatus is received by the other end thereof. Due to the insulation resistance of the FBG, the acoustic wave detector can be installed close to or in contact with the high-voltage apparatus without introducing discharges or noise from the high-voltage apparatus.

Acoustic emission wave detection system for a high voltage apparatus

The object of the present invention is to compensate for a difference in threshold voltage between a plurality of switching devices incorporated in a power module. The present invention solves the subject described above by mounting a switching device having a high threshold voltage in comparison with a different switching device at a location at which the temperature of the power module during operation is higher than that at another location at which the different switching device is mounted. Eventually, a power conversion apparatus of a high performance and a vehicle drive apparatus of a high performance can be provided.

Power module, electrical power conversion device, and driving device for vehicle

A first conductive pattern includes: a first feeding point for supplying a potential to the first conductive pattern located at one end thereof; one or more diode elements located over the first conductive pattern; and a plurality of switching elements over the first conductive pattern on the opposite side to the first feeding point with the diode elements in between. A second conductive pattern includes a second feeding point that is provided in proximity to the first feeding point and supplies a potential different from that for the first conductive pattern to the second conductive pattern. The plurality of the switching elements is electrically connected with the second conductive pattern through a plurality of bonding wires. The second conductive pattern is provided with a slit pattern that defines an area of connection of the plurality of the bonding wires with the second conductive pattern over the second conductive pattern.

Power transistor module

There are provided a variable inductor with little degradation in quality factor, and an oscillator and a communication system using the variable inductor. An inductance controller comprising a reactance device with a variable device value, such as, for example, a variable capacitor, is connected to a secondary inductor, magnetically coupled to a primary inductor through mutual inductance. The inductance controller is provided with an inductance control terminal for receiving a control signal for controlling capacitance of the variable capacitor. Inductance of the primary inductor is varied by varying the capacitance by the control signal.

Variable inductor, and oscillator and communication system using the same

There is disclosed a variable-gain amplifier circuit that operates on a low voltage, exhibits low distortion, provides a wide range of variation, and is suitable for use in a low-power-consumption wireless communication system. The variable-gain amplifier circuit is configured so that a variable-load circuit, which includes three reactance function elements and provides a wide range of impedance variation, is connected to a conductor circuit whose output terminal generates a positive-phase output current proportional to conductance with respect to an input voltage.

Variable-gain amplifier circuit and wireless communication device integrated circuit equipped therewith

The present invention provides a semiconductor integrated circuit including an active mixer circuit that is operated at low voltage, low noise, and low power consumption. It includes a transconductance amplifier, a transformer, and a multiplier, connects a transformer between the transconductance amplifier and the multiplier, and separates between the transconductance amplifier and the multiplier with respect to direct current inside the transformer. Further, each of the tranconductance amplifier and the multiplier is configured of transistors that are single-stacked between the supply voltage terminal and ground terminal.

Active mixer circuit and a receiver circuit or a millimeter-wave communication unit using it

The present invention is directed to provide a low-power-consumption wide-range RF signal processing unit having a small chip occupation area. A semiconductor integrated circuit has, on a semiconductor chip, a resonant circuit including a first capacitor having a capacitance which can be controlled by a first control signal of a first control terminal, and a gyrator for equivalently emulating an inductor by including a second capacitor having a capacitance which can be controlled by a second control signal of a second control terminal. The capacitance and the inductor form a parallel resonant circuit. At the time of changing parallel resonant frequency, the capacitances of the first and second capacitors are coordinately changed. The parallel resonant circuit is suitable for an active load which is connected to an output node of an amplifier.

Active resonant circuit with resonant-frequency tunability

The present invention provides a voltage-controlled oscillator operating from microwave frequencies to millimeter wave frequencies, which is capable of outputting a large power with an output impedance thereof being set up to a predetermined level at low power consumption, and a communication device using the same. The voltage-controlled oscillator includes: a differential alternating current generator including a resonator capable of varying resonant frequency according to an input control voltage, for generating a pair of differential alternating current each of which having the same frequency with the resonant frequency of the resonator yet being 180 degrees out of phase in mutual; a pair of transformers each of which having a primary inductor and a secondary inductor, for conducting the alternating current to the primary inductor; and an impedance-matching circuit connected to the secondary inductor of the transformers, wherein an output signal is outputted from the secondary inductors of the transformers.

Voltage-controlled oscillator and communication device using the same

A frequency synthesizer comprises: a single-tone signal generator which outputs signals of a single frequency; a frequency multiplier which generates one or more intermediate signals having different frequencies based on frequencies of input signals and outputs the same as output signals; a frequency selector; a mixer; and a frequency synthesizer control circuit which includes a frequency synthesizer control terminal, wherein an output of the single-tone signal generator is set as an input of the frequency multiplier, one or more outputs of the frequency multiplier are set as one or more inputs of the frequency selector, an output of the frequency selector and one output of the outputs of the frequency multiplier are set as first and second inputs of the mixer, and an output of the mixer is set as an output of the frequency synthesizer.

Frequency synthesizer

The variable gain amplifier includes a bias circuit (BC), a matching circuit (MC), a variable gain resistive feedback amplifier (FA)and an output follower (EA). The resistance values of the load resistance Rc and feedback resistance Rf are changed in cooperation. In a case of making the load resistance Rc a high resistance to set the low noise amplifier to a high gain, the feedback resistance Rf is also made a high resistance, the feedback time constant &#x3c4;fb(c)&#x2248;2&#x3c0;&#xb7;RfCbe/(1+gmRc) of the closed loop of the resistive negative feedback amplifierbecomes substantially constant, and then the amplifier has a gain small in frequency dependency over a wide bandwidth. In a case of making the load resistance Rc a low resistance to set the low noise amplifier to a low gain, the feedback resistance Rf is also made a low resistance. The feedback resistance Rf with the low resistance increases the negative feedback quantity, and thus the amplifier is set to a low gain. Also, the load resistance Rc is made a low resistance, and the feedback time constant &#x3c4;fb(c) becomes substantially constant. The gain is not lowered further in a high frequency region.

Semiconductor integrated circuit with variable gain amplifier

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Kokubunji, Japan

Toru Masuda