Olympus Corporation

Mitsubishi Chemical Corporation

Mitsubishi Rayon Company, Limited

Toru Kondo

Nobuyuki Watanabe

Masato Yamamoto

Seisuke Matsuda

Kosei Tamiya

Eiji Furukawa

Masahiro Ichino

Takuya Teranishi

Satoshi Okamoto

Akira Oota

Saki Fujita

Yukihiro Harada

Satoshi Mae

Yuuta Maenaka

Eriko Satou

Akiko Miyagawa

Shogo Miyai

Megumi Kayashima

An acrylic resin powder soluble in acetone, including a multi-stage polymer (M) that includes a polymer (B) obtained by polymerizing a monomer mixture (b) containing methyl methacrylate and an alkyl (meth)acrylate ester (mb) in the presence of a polymer dispersion that contains a polymer (A) obtained by polymerizing a monomer mixture (a) containing an alkyl (meth)acrylate ester (ma), in which an alkyl group in the alkyl (meth)acrylate ester (ma) has 4 to 8 carbon atoms, an alkyl group in the alkyl (meth)acrylate ester (mb) has 4 to 8 carbon atoms, a glass transition temperature of the polymer (A) is 20° C. or lower, a glass transition temperature of the polymer (B) obtained by polymerizing the monomer mixture (b) is 55° C. or higher, and a mass average molecular weight of the multi-stage polymer (M) is 10,000 or more and 300,000 or less.

Acrylic resin powder, resin composition, hot melt adhesive composition containing acrylic resin powder and method for producing same

There are provided an acrylic polymer and plastisol using which a textile ink having excellent washing resistance and crocking resistance can be produced and a textile ink having excellent washing resistance and crocking resistance. The acrylic polymer of the present invention is an acrylic polymer comprising an acetone-soluble portion (A) and an acetone-insoluble portion (B), and the content of the acetone-insoluble portion (B) in the acrylic polymer is 5 mass % to 29 mass %, and the content of methyl methacrylate units in the acetone-soluble portion (A) is 60 mass % to 85 mass %.

Acrylic polymer, plastisol, and textile ink

A solid-state imaging device includes a first semiconductor substrate including a pixel array unit, a second semiconductor substrate stacked on a surface of a side opposite to a side on which light is incident in the first semiconductor substrate and on which a pixel control circuit and a reading circuit are arranged, and a plurality of connection electrodes configured to electrically connect pixel control signal lines between the first semiconductor substrate and the second semiconductor substrate, wherein the connection electrodes electrically connect pixel control signal lines within a pixel immediate region which overlaps a region where the pixel array unit is arranged in the first semiconductor substrate, and the pixel control circuit is arranged along an edge of the pixels in either one of a row direction and a column direction arranged in the pixel array unit in the pixel immediate region.

Solid state imaging device

A solid-state image pickup device includes: a pixel array in which a plurality of pixels each outputting a photoelectric conversion signal are disposed; a reference voltage generator that generates a temperature detection voltage changing in accordance with a change in temperature and a reference voltage not depending on a change in temperature; a read circuit that performs signal processing of the photoelectric conversion signal output by the pixel array and the temperature detection voltage generated by the reference voltage generator and reads the photoelectric conversion signal and the temperature detection voltage that are processed; an output circuit that outputs both the photoelectric conversion signal and the temperature detection voltage for which the signal processing has been performed by the read circuit to the outside; and a bias generator that supplies a bias voltage generated based on the reference voltage to both the read circuit and the output circuit.

Solid-state image pickup device and image pickup apparatus

A resin composition including an epoxy resin (A), a curing agent (B), and vinyl polymer particles (C), in which the contained amount of epoxy resin (a1) having a molecular weight of 100-480 is 30-90 parts by mass per 100 parts by mass of the epoxy resin (A), the contained amount of epoxy resin (a2) having a molecular weight of 2,000-40,000 is 10-70 parts by mass per 100 parts by mass of the epoxy resin (A), the contained amount of the vinyl polymer particles (C) is 2-30 parts by mass per 100 parts by mass of the epoxy resin (A), and the instantaneous maximum thickening value of the vinyl polymer particles obtained by the following method is 0.3-5.0 Pa&#xb7;s/&#xb0; C.

Resin composition and compression-molded article of same

A solid-state imaging device includes n first photoelectric conversion elements configured to photoelectrically convert incident light, n first reading circuits configured to output corresponding first pixel signals, m second photoelectric conversion elements configured to photoelectrically convert incident light, m second reading circuits configured to sequentially output corresponding second pixel signals, and a reading control circuit, wherein each of the second reading circuits includes a detection circuit configured to output an event signal when a change in a second charge signal is detected and a pixel signal generation circuit configured to add address information to an event signal, and the reading control circuit causes the first pixel signal to be output by determining a reading region corresponding to address information, and n and m are natural numbers greater than or equal to 2.

Solid-state imaging device

A solid-state imaging device includes a first substrate, a second substrate, an electrode portion, a first substrate connecting portion, an electrostatic protection circuit, and a second substrate connecting portion. A photoelectric conversion element is disposed on the first substrate. A part of the peripheral circuit is arranged on the second substrate. The electrode portion has a connection surface. The first substrate connecting portion electrically connects the electrode portion and the second substrate. The electrostatic protection circuit is connected to a circuit between the first substrate connecting portion and the peripheral circuit. The second substrate connecting portion electrically connects the peripheral circuit and the photoelectric conversion element. The electrostatic protection circuit is disposed at a position such that the electrostatic protection circuit does not overlap any of the first substrate connecting portion and the second substrate connecting portion.

Solid-state imaging device and imaging system

A solid-state imaging device includes a first semiconductor substrate to which light is incident; a second semiconductor substrate stacked to the first semiconductor substrate; n first photoelectric conversion devices periodically arranged in the first semiconductor substrate and generating first electric charge signals; n first reading circuits arranged in correspondence with the n first photoelectric conversion devices in the first semiconductor substrate, respectively, each of the n first reading circuits accumulating the first electric charge signal outputting a signal voltage corresponding to the accumulated first electric charge signal as a first pixel signal; a driving circuit sequentially outputting the first pixel signal; m second photoelectric conversion devices periodically arranged in one of the first/second semiconductor substrates and generating second electric charge signals; and m second reading circuits sequentially outputting a second pixel signal, wherein m and n are natural numbers equal to 2 or more than 2.

A solid-state imaging device includes a plurality of pixels in which photoelectric conversion units that generate signal charges are arranged in a matrix, a plurality of first charge accumulation circuits that hold the signal charges and output the signal charges as a first pixel signal, a plurality of charge transfer circuits that transfer the signal charges to the first charge accumulation circuit, and a plurality of second charge accumulation circuits that hold signal charges based on the signal charges generated by the photoelectric conversion units and output the signal charges as a second pixel signal in which the number of pixels is reduced to a predetermined number, and the charge transfer circuit transfers the signal charges in the same exposure period to the second charge accumulation circuit when transferring the signal charges of the same exposure to the first charge accumulation circuit.

Solid-state imaging device and imaging system for transferring signal charges during the same exposure period

A solid-state image pickup device includes: a first substrate which has a pixel part divided into a plurality of groups obtained by dividing a plurality of pixels arranged in a two-dimensional matrix into groups corresponding to each of a plurality of predetermined rows; and a second substrate including a pixel load current source corresponding to a vertical signal line to which the plurality of pixels disposed in the same column within the groups are connected, a column circuit that performs a predetermined process on a pixel signal which is output from the pixel to a corresponding vertical signal line, and a pixel for correction that outputs a pixel signal for correction for correcting the corresponding column circuit to the vertical signal line to which the corresponding column circuit is connected, for each column of the pixels belonging to the group.

A solid-state imaging device includes a pixel signal processing unit including a plurality of pixels; a plurality of first charge storage circuits which are configured to hold the first signal charges generated by the photoelectric conversion units and output first signal voltages as first pixel signals; and a plurality of second charge storage circuits which are configured to hold second signal charges and output second signal voltages, and a differential analog/digital conversion unit includes: a plurality of first differential calculation units; a plurality of first analog/digital conversion units which are configured to perform analog/digital conversion to the first differential pixel signals and output digital values indicating magnitudes of the first differential pixel signals; and a plurality of second analog/digital conversion units which are configured to perform analog/digital conversion to the second pixel signal and output digital values indicating magnitudes of the second pixel signals.

Disclosed is a method for producing a plastisol acrylic polymer which can have a satisfactory adhesion property even when the heating time is short and the heating temperature is low, and which has excellent storage stability. The method comprises (1) a step of polymerizing an acrylic monomer mixture (a) to produce a polymer (A) and (2) a step of polymerizing an acrylic monomer mixture (b) in a dispersion containing the polymer (A), wherein a monomer having a hydroxy group is contained in the acrylic monomer mixture (a), a monomer having an acetoacetyl group or a block isocyanate group is contained in the acrylic monomer mixture (b), and the dissolution parameter (SA) for the polymer (A) and the dissolution parameter (SB) for a polymer (B) produced by the polymerization of the acrylic monomer mixture (b) are different from each other.

Method for producing acrylic polymer, acrylic polymer, and plastisol composition

A solid-state image pickup device according to one aspect of the present invention includes, but is not limited to: first and second substrates on which circuit elements constituting a pixel; a coupler electrically coupling the first and second substrates; a first photoelectric conversion element on the first substrate; a first amplifier circuit on the first substrate; a first storing unit on the second substrate; and an output circuit on the second substrate. The first photoelectric conversion element performs photoelectric conversion on a first incident light to generate a first signal. The first amplifier circuit is coupled in series to the first photoelectric conversion element. The first amplifier circuit amplifies the first signal to generate a first amplified signal and output the first amplified signal to the coupler. The first storing unit stores the first amplified signal. The output circuit sequentially outputs the first amplified signal stored.

Solid-state image-pickup device, image-pickup device, and signal reading method

In the solid-state imaging device, first and second substrates are electrically connected to each other via connectors electrically connecting the first and second substrates. A photoelectric conversion element is disposed in the first substrate. A read circuit is disposed in the second substrate and reads a signal generated by the photoelectric conversion element and transmitted via the connector. In a signal processing circuit including elements or circuits performing signal processing on the read signal, some of the elements or circuits are disposed in the first substrate, the remaining elements or circuits are disposed in the second substrate, and the elements or circuits disposed in the first and second substrates are electrically connected to each other via the connector.

Solid-state imaging device and imaging device with circuit elements distributed on multiple substrates, method of controlling solid-state imaging device, and imaging device with circuit elements distributed on multiple substrates

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Tokyo, Japan

Toru Kondo