Canon Anelva Corporation

Tokyo Electron Limited

Toru Kitada

Atsushi Gomi

Shinji Furukawa

Naoki Watanabe

Kanto Nakamura

Motonobu Nagai

Yasuhiko Kojima

Tetsuya Miyashita

Hiroshi Sone

Tatsuo Hirasawa

Yusuke Suzuki

Koichi Takatsuki

Masahiro Suenaga

Chiaki Yasumuro

Yasunobu Suzuki

Atsushi Shimada

Takeo Konno

Keisuke Sato

A deposition device according to one embodiment includes a processing container. A mounting table is installed inside the processing container, and a metal target is installed above the mounting table. Further, a head is configured to inject an oxidizing gas toward the mounting table. This head is configured to move between a first region that is defined between the metal target and a mounting region where a target object is mounted on the mounting table and a second region spaced apart from a space defined between the metal target and the mounting region.

Deposition device and deposition method

The present disclosure provides a vacuum-processing apparatus for forming a metal film on a substrate by sputtering targets with ions of plasma, and then oxidizing the metal film, the apparatus including: a first target composed of a material having a property of adsorbing oxygen; a second target composed of a metal; a power supply unit configured to apply a voltage to the targets; a shutter configured to prevent particles generated from one of the targets from adhering to the other of the targets; a shielding member; an oxygen supply unit configured to supply an oxygen-containing gas to the substrate mounted on the mounting unit; and a control unit configured to perform supplying a plasma-generating voltage to the targets and sputtering the targets and supplying the oxygen-containing gas from the oxygen supply unit to the substrate.

Vacuum-processing apparatus, vacuum-processing method, and storage medium

A magnetic film having excellent uniformity in in-plane distribution of film thickness or sheet resistance is formed when the film is formed by forming a magnetic field on a processing surface of a substrate () and performing oblique incidence sputtering by using high discharge power. A sputtering apparatus () is provided with a substrate holder () for holding rotatably the substrate () in the surface direction of the processing surface of the substrate; a substrate magnetic field forming device () which is disposed to surround the substrate () and forms a magnetic field on the processing surface of the substrate (); cathodes () which are arranged diagonally above the substrate () and are supplied with electric discharge power; a position detecting device () for detecting a rotation position of the substrate (); and a control device () which adjusts the rotation speed of the substrate () in accordance with the rotation position detected by the position detecting device ().

Sputtering device and sputtering method

A sputtering apparatus includes a substrate holder which holds a substrate to be rotatable in the plane direction of the processing surface of the substrate, a substrate-side magnet which is arranged around the substrate and forms a magnetic field on the processing surface of the substrate, a cathode which is arranged diagonally above the substrate and receives discharge power, a position detection unit which detects the rotational position of the substrate, and a controller which controls the discharge power in accordance with the rotational position detected by the position detection unit.

Sputtering apparatus, sputtering method, and electronic device manufacturing method

A manufacturing method of a magnetoresistance element having a pinned magnetic layer, a non-magnetic intermediate layer, and a free magnetic layer, the method includes forming at least one thin film of the non-magnetic intermediate layer and the free magnetic layer at a pressure of 8.0&#xd7;10Pa or less in the vicinity of a substrate using a sputtering apparatus. The apparatus includes a vacuum chamber in which a cathode and a substrate holder are arranged, a first exhausting apparatus connected to an exhausting port of the vacuum chamber, a gas introduction mechanism to introduce a gas toward the target, a first pressure regulator to cause a pressure difference between a target space and a center space outside the target space, a second pressure regulator to cause a pressure difference between the center space and a substrate space, and a second exhausting apparatus to exhaust the center space.

Manufacturing apparatus of magnetoresistance elements

Growing community of inventors

Cupertino, CA, United States of America

Toru Kitada