Mitsubishi Electric Corporation

Jsr Corporation

Polymatech Co., Ltd.

Crystal Is, Inc.

Sony Corporation

Mitsubishi Denki Kabushiki Kaisha

Pioneer Corporation

Yamaha Corporation

Toyokawa Denki Co., Ltd.

Toru Kimura

Atsushi Nakamura

Tadahiro Yoshida

Naoki Tanaka

Leo J Schowalter

Robert T Bondokov

Keisuke Yamaoka

James R Grandusky

Jianfeng Chen

Masayuki Tobita

Takashi Chiba

Shichao Wang

Koichi Kagawa

Thomas Miebach

Toshihiro Matsunaga

Hiroki Nakagawa

Tomohiro Utaka

Naoyuki Shimoyama

Hideki Miyatake

Hirokazu Sakakibara

Yoshio Takimoto

Hiroyuki Yoshihara

Yoichi Goto

Tsukasa Ishigaki

Hiroshi Ikeda

Yukio Nishimura

Masahiro Arioka

Dai Nakajima

Hiromitsu Nakashima

Masafumi Hori

Hiroaki Nemoto

Shin-ya Nakafuji

Toshio Hashimoto

Shin-ya Minegishi

Kazuki Kasahara

Satoru Murakami

Masaki Goto

Masafumi Yoshida

Kiyofumi Kitai

Reiko Kimura

Sachiko Kaneko

Goro Ueda

Hiroshi Dougauchi

Fumio Saitoh

Takashi Mori

Masao Kikuchi

Tatsuya Okuda

Kazuki Takahashi

Ken Maruyama

Naoki Yoshimatsu

Masayoshi Ishikawa

Yuji Shirakata

Tomotaka Yano

Shinya Minegishi

Hisashi Aoki

Mitsuru Tsukima

Yusuke Asano

Kazunori Takanashi

Hiromitsu Tanaka

Kei Yamamoto

Taehyun Kim

Hiroshi Yamabuchi

Goji Wakamatsu

Takanobu Yoshida

Kazuhiro Tada

Taishi Sasaki

Masakazu Fukada

Yuji Kuramoto

Kyoyu Yasuda

Tsunehisa Kimura

Takao Mitsui

Hiromu Miyata

Takayoshi Abe

Takeshi Ohi

Makoto Kanemaru

Shinya Nakafuji

Tomoko Tanabe

Masatoshi Hasegawa

Toshinori Yamane

Noriyuki Funakubo

Yuuji Kuramoto

Munetaka Kashiwa

Kenji Kusaki

Masafumi Yamato

Shunsuke Kurita

Shun Aoki

Sean P Branagan

Hideki Komori

Majumdar Gourab

Kazuhiko Koumura

Shigeyuki Nakazato

Masahiko Okuzawa

Takayuki Kai

In various embodiments, single-crystal aluminum nitride boules and substrates have low Urbach energies and/or absorption coefficients at deep-ultraviolet wavelengths. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers. The single-crystal aluminum nitride boules may advantageously have diameters that increase along at least portions of their lengths.

Aluminum nitride crystals having low urbach energy and high transparency to deep-ultraviolet wavelengths

In various embodiments, single-crystal aluminum nitride boules and substrates are formed from the vapor phase with controlled levels of impurities such as carbon. Single-crystal aluminum nitride may be heat treated via quasi-isothermal annealing and controlled cooling to improve its ultraviolet absorption coefficient and/or Urbach energy.

Impurity control during formation of aluminum nitride crystals and thermal treatment of aluminum nitride crystals

In various embodiments, single-crystal aluminum nitride boules and substrates are highly visibly transparent and have low Urbach energies and/or absorption coefficients at deep-ultraviolet wavelengths. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.

Aluminum nitride single crystals having controllable color and methods of forming them

In various embodiments, single-crystal aluminum nitride boules and substrates have low Urbach energies and/or absorption coefficients at deep-ultraviolet wavelengths. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.

A vacuum circuit breaker includes a tank containing an electrical device. An opening corresponds to a terminal of the electrical device. A porcelain tube protruding from the tank is fixed to an opening base, and has a terminal conductor. A first connection conductor in the porcelain tube is connected to the terminal conductor. A second connection conductor is arranged in the porcelain tube. A third connection conductor is arranged between the first and the second connection conductor, has a closed end concave section fitted onto the first connection conductor and is connected to the second connection conductor by a fastener. A contact is disposed between said first connection conductor and the third connection conductor. The third and second connection conductors are made of a solid conductor. A center of the third connection conductor and a center of the second connection conductor are formed with a threaded section.

Tank type vacuum circuit breaker

A basic unit portion configured by a standard unit and a variable unit portion whose shape is configured to be changeable. The basic unit portion includes: a first pressure tank with a first opening portion; a circuit breaker; a first bushing; a first disconnecting switch. The variable unit portion includes: a busbar; a second pressure tank with a second opening portion; a second bushing whose necessary number is disposed in accordance with the number of circuits to be externally connected; and second disconnecting switches which are arranged between the busbar and the second bushing. The first opening portion of the basic unit portion and the second opening portion of the variable unit portion are joined facing each other to form into a constitutional body.

Gas insulated switchgear

Distribution board

A pattern-forming method comprises: forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; and removing at least a part of the resist underlayer film and at least a part of the silicon-containing film with a basic aqueous solution. Preferably, the pattern-forming method further comprises, after the forming of the silicon-containing film and before the removing of the resist underlayer film and the silicon-containing film, forming a resist pattern on an upper face side of the silicon-containing film, and etching the silicon-containing film using the resist pattern as a mask.

Pattern-forming method, resin, and composition

A pattern-forming method includes applying an inorganic film-forming composition on an upper face side of a substrate to provide an inorganic film, forming a resist pattern on an upper face side of the inorganic film; and dry-etching once or several times using the resist pattern as a mask such that the substrate has a pattern The inorganic film-forming composition includes a polyacid or a salt thereof, and an organic solvent. The step for forming a resist pattern may include the steps of: applying a resist composition on an upper face side of the inorganic film to provide a resist film; exposing the resist film; and developing the resist film exposed.

Pattern forming method

A power semiconductor device is provided with a base plate thermally connected to the power semiconductor element for heat generated from the power semiconductor element to be conducted to heat radiation fins. An electrically conductive member fixed to the base plate is electrically conducted to the base plate and is connected to ground, and has projections fitted into notches provided in the electrically conductive member. By deforming the projections, the electrically conductive member is fixed to the base plate and electrical conduction can be secured. With this arrangement, noise radiated from the power semiconductor element is reduced and malfunction of the power semiconductor element is suppressed.

Power semiconductor device

A pattern-forming method includes providing a resist underlayer film on a substrate using a resist underlayer film-forming composition. The resist underlayer film-forming composition includes a first polymer having a glass transition temperature of 0 to 180&#xb0; C. A silicon-based oxide film is provided on a surface of the resist underlayer film. A resist pattern is provided on a surface of the silicon-based oxide film using a resist composition. The silicon-based oxide film and the resist underlayer film are sequentially dry-etched using the resist pattern as a mask. The substrate is dry-etched using the dry-etched resist underlayer film as a mask.

Pattern-forming method and resist underlayer film-forming composition

Included are: a movable plate which is coupled to a main shaft of the switchgear and performs motion in accordance with the movement of the main shaft; an ON/OFF display plate in which a display showing the state of the switchgear, such as 'ON'/'OFF,' is provided on each of different two faces, and mechanically rotates or performs linear motion and thus displaying the opening/closing state of the contact; and an ON/OFF display plate link which is mechanically connected to the movable plate and the ON/OFF display plate and converts the motion of the movable plate to transfer to the ON/OFF display plate. The display of the ON/OFF display plate is arranged at a tilt toward the upper side or the lower side so as to point at an optional angle.

Switchgear state display device

Growing community of inventors

Tokyo, Japan

Toru Kimura