Murata Manufacturing Co., Ltd.

Toru Kasanami

Hisashi Ariyoshi

Susumu Fukuda

Hiroji Tani

Akio Ikeda

Atsuo Senda

Shizuharu Watanabe

Yukio Yoshino

Kenichi Kotani

Suehiro Kato

Mikio Nakajima

Toshiaki Ikeda

A piezoelectric device is essentially composed of a piezoelectric transducer and a light transmitting protector. The protector is made of heat resisting glass, heat resisting acrylic, transparent ceramics or the like. By exposing the piezoelectric device to a laser beam and thereby causing it to penetrate through the protector to the piezoelectric transducer and to partly cut the surface of the piezoelectric transducer, or to change the intensity of polarization, mechanical coupling coefficient or dielectric constant of the piezoelectric transducer, its vibration frequency and resonance characteristic can be adjusted. If an ultraviolet-ray setting agent is used as adhesive, it can be hardened by exposing the piezoelectric device to ultraviolet rays to thereby cause it penetrate through the protector.

Method of producing a piezoelectric device

A manufacturing method for an integrated resonator is disclosed wherein a mass of O.sup.+ ions are implanted into a silicon monocrystal substrate from one side thereof, a buried SiO.sub.2 layer is formed by annealing the ion implanted substrate, an SiO.sub.2 layer is formed on the surface of the substrate by oxidizing it, at least one slit is formed on the SiO.sub.2 layer for etching a predetermined area of the silicon monocrystal layer sandwich between two SiO.sub.2 layers to form a cavity and, a piezo-electric resonator is formed on an area of the surfacial SiO.sub.2 layer corresponding to the cavity in the substrate.

Manufacturing method for integrated resonator

A production method for producing a semiconductor device by growing a crystalline compound semiconductor on a monocrystalline silicon substrate is comprised of a step for forming a transition domain varying from a monocrystalline silicon layer to a polycrystalline silicon layer in the silicon substrate by implanting oxygen ions into the silicon substrate and annealing the silicon substrate and a step for depositing a compound semiconductor layer on the silicon substrate.

Producing a compound semiconductor device on an oxygen implanted silicon

Resistance paste for baked-film resistors consists essentially of conducting powder, glass frit and organic varnish. The conducting powder consists essentially of iron oxide, ruthenium oxide and lead oxide, the molar ratio of the three components of the conducting powder being 1:0.6-3:0.2-1 when expressed in terms of Fe.sub.3 O.sub.4, RuO.sub.2 and Pb.sub.3 O.sub.4, respectively.

Resistance paste

A process for preventing the oxidation of a copper film formed on a ceramic body, which comprises the steps of forming a copper film on a ceramic body by a dry-plating process, treating the resultant copper film with a deactivating agent comprising at least one volatile hydrocarbon halide monomer by feeding the same into a vacuum chamber of a dry-plating apparatus.

Growing community of inventors

Kyoto, Japan

Toru Kasanami