Kokusai Electric Corporation

Hitachi-kokusai Electric Inc.

Toru Kakuda

Hidehiro Yanai

Shin Hiyama

Tomihiro Amano

Toshiya Shimada

Takuya Joda

Sadayoshi Horii

Masahisa Okuno

Hideto Tateno

Katsuhiko Yamamoto

Daisuke Hara

Akinori Tanaka

Takashi Tsukamoto

A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel; a gas introduction port installed at an upper end of the reaction vessel; an electrode installed along an outer circumference of the reaction vessel; a baffle installed between the upper end of the reaction vessel and an upper end of the electrode with a gap between an outer circumference of the baffle and an inner circumference of the reaction vessel along the outer circumference of the baffle; a fixing part attached to an inner plane of the baffle and disposed inside the outer circumference of the baffle so as to fix the baffle to the upper end of the reaction vessel; and a gas exhaust pipe connected to the reaction vessel.

Substrate processing apparatus, and method of manufacturing semiconductor device

A substrate processing apparatus, includes: a process chamber accommodating a substrate; a vaporizer vaporizing a liquid precursor to generate reaction gas and deliver a processing gas containing the reaction gas and a carrier gas, the vaporizer including: a vaporization vessel; and a heater heating the liquid precursor introduced into the vessel; a carrier gas flow rate controller controlling flow rate of the carrier gas supplied to the vaporizer; a liquid precursor flow rate controller controlling flow rate of the liquid precursor; a processing gas supply pipe introducing the processing gas delivered from the vaporizer into the process chamber; and a gas concentration sensor detecting a gas concentration of the reaction gas contained in the processing gas delivered from the vaporizer into the processing gas supply pipe.

Substrate processing apparatus

A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber.

Substrate processing apparatus, method of manufacturing semiconductor device, and baffle structure of the substrate processing apparatus

There is provided a technique that includes a first act of modifying a film containing a silazane bond by heating a substrate, in which the film containing the silazane bond is formed over a surface of the substrate, to a first temperature and by supplying a first processing gas containing hydrogen peroxide to the substrate; and after the first act, a second act of modifying the film containing the silazane bond by heating the substrate to a second temperature higher than the first temperature and by supplying a second processing gas containing hydrogen peroxide to the substrate.

Method of manufacturing semiconductor device and recording medium

Described herein is a technique capable of improving a quality of a substrate processing performed using hydrogen peroxide. According to one aspect of the technique described herein, there is provided a method of manufacturing a semiconductor device including: (a) supplying a first process gas containing water and a first concentration of hydrogen peroxide to a substrate having a silicon-containing film formed on a surface thereof; and (b) supplying a second process gas containing water and a second concentration of hydrogen peroxide higher than the first concentration to the substrate after (a).

Method of manufacturing semiconductor device and non-transitory computer-readable recording medium

To improve the characteristics of a film formed on a substrate, a method of manufacturing a semiconductor device includes: loading a substrate into a processing container, the substrate being provided with a film having a silazane bond, the film being subjected to pre-baking; supplying oxygen-containing gas at a first temperature not higher than the temperature of the pre-baking; and supplying processing gas containing at least any one of steam and hydrogen peroxide at a second temperature higher than the first temperature.

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Toyama, Japan

Toru Kakuda