Hitachi-high-technologies Corporation

Hitachi High-tech Corporation

Toru Iwaya

Hisayuki Takasu

Kengo Asai

Atsushi Kamino

Hiroyasu Shichi

Asako Kaneko

Hirobumi Muto

Kento Horinouchi

Sakae Koubori

Tsutomu Tetsuka

Tomohisa Ohtaki

Mami Konomi

Hitoshi Kamoshida

Haruhiko Hatano

Hirobumi Mutou

Sakae Kobori

Hajime Chino

Masaru Watahiki

Provided is an ion gun that is capable of obtaining a higher plasma efficiency. This ion gun comprises: a first cathodethat is formed in a disc shape; a second cathodethat is formed in a disc shape and has an ion beam extraction holeprovided thereto; a first permanent magnetthat is disposed between the first cathode and the second cathode, and that is formed in a cylindrical shape; an anodethat has a cylindrical regionand an extending regionprovided to one end of the cylindrical region; and an insulating materialthat keeps the anode electrically insulated from the first cathode, the second cathode, and the first permanent magnet, all of which are electrically connected. The cylindrical region of the anode is disposed inside the inner diametrical position of the first permanent magnet, and the extending region of the anode is disposed so as to cross over the inner diametrical position of the first permanent magnet and to face the first cathode.

Ion gun and ion milling machine

An ion milling device which balances high processing speed and a wide processing region with smoothness of a processing surface. The ion milling device includes first to third ion guns that emit unfocused ion beams. An ion beam center of the third ion gun is included in a first plane defined by a normal to a surface of a sample and a mask end, and an ion beam center of the first ion gun and an ion beam center of the second ion gun are included in a second plane. The second plane is inclined toward the mask with respect to the first plane, and an angle formed by the first plane and the second plane is more than 0 degrees and 10 degrees or less. The processing surface of the sample is formed in a region where the emitted ion beams overlap on the surface of the sample.

Ion milling device

Provided is a machining technology to obtain a desired machining content while suppressing a possibility of causing a redeposition in a machining surface. The invention is directed to provide an ion milling device which includes an ion source which emits an ion beam, a sample holder which holds a sample, and a sample sliding mechanism which slides the sample holder in a direction including a normal direction of an axis of the ion beam.

Ion milling device and ion milling method

To provide an ion milling apparatus adapted to suppress the contamination of a beam forming electrode. The ion milling apparatus includes: an ion gun containing therein a beam forming electrode for forming an ion beam; a specimen holder for fixing a specimen to be processed by irradiation of an ion beam; a mask for shielding a part of the specimen from the ion beam; and an ion gun controller for controlling the ion gun.

Ion milling apparatus

By irradiating a sample with an unfocused ion beam, processing accuracy of an ion milling device for processing a sample or reproducibility accuracy of a shape of a processed surface is improved. Therefore, the ion milling device includes a sample chamber, an ion source position adjustment mechanism provided at the sample chamber, an ion source attached to the sample chamber via the ion source position adjustment mechanism and configured to emit an ion beam, and a sample stage configured to rotate around a rotation center. When a direction in which the rotation center extends when an ion beam center of the ion beam matches the rotation center is set as a Z direction, and a plane perpendicular to the Z direction is set as an XY plane, the ion source position adjustment mechanism is capable of adjusting a position of the ion source on the XY plane and a position of the ion source in the Z direction.

Ion milling device and ion source adjusting method for ion milling device

To provide an ion gun of a penning discharge type capable of achieving a milling rate which is remarkably higher than that in the related art, an ion milling device including the same, and an ion milling method. An ion generation unit includes a cathode that emits electrons, an anode that is provided within the ion generation unit and has an inner diameter of 5.2 mm or less, and magnetic-field generation means using a permanent magnet of which a maximum energy product ranges from 110 kJ/mto 191 kJ/m.

Ion milling device, ion source, and ion milling method

An ion milling device of the present invention is provided with a tilt stage () which is disposed in a vacuum chamber () and has a tilt axis parallel to a first axis orthogonal to an ion beam, a drive mechanism () which has a rotation axis and a tilt axis parallel to a second axis orthogonal to the first axis and rotates or tilts a sample (), and a switching unit which enables switching between a state in which the ion beam is applied while the sample is rotated or swung while the tilt stage is tilted, and a state in which the ion beams is applied while the tilt stage is brought into an untilted state and the sample is swung. Consequently, the ion milling device capable of performing cross-section processing and flat processing of the sample in the same vacuum chamber is implemented.

A charged particle beam device that can improve machining position precision in section processing using a shielding plate is provided. The invention is directed to a charged particle beam device including: an ion source (); a sample stand () on which a sample () is mounted; a shielding plate () placed so that a portion of the sample () is exposed when seen from the ion source (); and tilt units () that tilt the sample () and the shielding plate () relative to the irradiation direction of an ion beam () from the ion source () to the sample ().

Charged particle beam device

To provide an ion milling system that can suppress an orbital shift of an observation electron beam emitted from an electron microscope column, the ion milling system includes: a Penning discharge type ion gunthat includes a permanent magnetand that generates ions for processing a sample; and a scanning electron microscope for observing the sample, in which a magnetic shieldfor reducing a leakage magnetic field from the permanent magnetto the electron microscope column is provided.

Ion milling system

To provide an ion gun of a penning discharge type capable of narrowing a beam with a low ion beam current at a low acceleration voltage, an ion milling device including the same, and an ion milling method. An ion milling device that controls half width of a beam profile of an ion beam with which a sample is irradiated from an ion gun to be in a range of 200 &#x3bc;m to 350 &#x3bc;m. The device includes: the ion gun that ionizes a gas supplied from the outside, and emits an ion beam; a gas-flow-rate varying unit that varies a flow rate of the gas supplied to the ion gun; and a current measurement unit that measures a current value of the ion beam emitted from the ion gun. The gas-flow-rate varying unit sets a gas flow rate to be higher than a gas flow rate at which the ion beam current has a maximum value based on the current value measured by the current measurement unit and the flow rate of the gas determined by the gas-flow-rate varying unit.

Ion milling device, ion source and ion milling method

The present invention relates to adjustment of a mask position by driving an R-axis of an electron microscope in order to adjust the mask position with high accuracy while performing observation by the electron microscope without providing a heat generation source inside the electron microscope. The R-axis originally exists in a sample chamber of the electron microscope, which enables control with high accuracy. The R-axis driving of a sample stage can be substituted by raster rotation, therefore, the mask position can be adjusted with high accuracy while performing observation by the electron microscope according to the present invention.

Mask position adjustment method of ion milling, electron microscope capable of adjusting mask position, mask adjustment device mounted on sample stage and sample mask component of ion milling device

Provided is a technology for suppressing a heat rise in a sample, the heat rise being generated due to ion beam irradiation at a low acceleration voltage. A blocking plate, which is different from a mask, is disposed in front of a sample. The blocking plate has an opening that overlaps a processing surface, and ion beams pass only through the opening of the blocking plate, and in the areas excluding the opening, the ion beams are blocked by the blocking plate, and the sample is not irradiated thereby. Furthermore, the heat rise in the sample is further suppressed by cooling the blocking plate.

Ion milling apparatus and sample processing method

The present invention aims at providing an ion milling apparatus for emitting an ion beam to a sample to process the sample and capable of controlling the temperature of the sample with high accuracy regardless of deformation or the like of the sample being irradiated with the ion beam, and proposes an ion milling apparatus including at least one of a shield holding member for supporting a shield for shielding the sample from the ion beam while exposing a part of the sample to the ion beam; a shifting mechanism for shifting a surface of the sample stand in contact with the sample following deformation of the sample during irradiation with the ion beam, the shifting mechanism having a temperature control mechanism for controlling temperature of at least one of the shield holding member and the sample stand; and a sample holding member disposed between the shield and the sample, the sample holding member deforming following deformation of the sample during irradiation with the ion beam, for example.

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Tokyo, Japan

Toru Iwaya