Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Toru Iwagami

Hisashi Kawafuji

Maki Hasegawa

Shinya Nakagawa

Mitsutaka Iwasaki

Masahiro Kato

Shuhei Yokoyama

Shigeru Mori

Shinya Shirakawa

Mamoru Seo

Shogo Shibata

Tomofumi Tanaka

Hiroyuki Nakamura

Gourab Majumdar

Akihisa Yamamoto

Yoshifumi Tomomatsu

Hiroshi Sakata

Shinji Hatae

Koichiro Noguchi

Dong Wang

Kosuke Yamaguchi

Fumitaka Tametani

Masaki Sakai

A semiconductor module includes: a semiconductor element; a first lead frame including a first portion on which the semiconductor element is mounted; a sealing member sealing the semiconductor element and the first portion; and a heat dissipation member which is integrated with the sealing member and dissipates heat generated in the semiconductor element. The heat dissipation member is insulated from the semiconductor element and the first portion by the sealing member. Therefore, the semiconductor module that is applicable to vertical semiconductor elements and ensures electrical insulation between the semiconductor element and the heat dissipation member when implementing the semiconductor module onto a circuit board, can be provided.

Semiconductor module and semiconductor device

The present invention is a semiconductor module including: first and second drive circuits that perform drive control of at least one pair of first and second switching devices, in which the at least one pair of first and second switching devices and the first and second drive circuits are sealed in a package having a rectangular shape in plan view, and there are provided: a control terminal provided to protrude from a side surface of a first long side out of first and second long sides of the package, and to which a control signal of the first and second drive circuits is inputted; an output terminal provided to protrude from a side surface of the second long side; a first main terminal provided to protrude from a side surface of a first short side out of first and second short sides of the package; and a second main terminal provided to protrude from a side surface of the second short side.

Package and terminal arrangement for semiconductor module

It is an object to provide a technique capable of providing a semiconductor device with information indicating a plurality of electrical characteristics. A semiconductor device sorting system includes a characteristic measurement unit measuring electrical characteristics of a semiconductor device, a rank determination database for classifying the electrical characteristics into ranks, a calculation unit classifying the plurality of electrical characteristics of the semiconductor device measured by the characteristic measurement unit into a plurality of ranks with reference to the rank determination database, a writing unit converting the plurality of ranks classified by the calculation unit into a graphic symbolic code and forming the graphic symbolic code on the semiconductor device, a reading unit reading the plurality of ranks from the graphic symbolic code formed on the semiconductor device, and a sorting unit sorting the semiconductor device based on the plurality of ranks being read by the reading unit.

Semiconductor device sorting system and semiconductor device

Converter output terminals of a converter are located adjacent to each other on a first side and an external terminal for external connection of a composite module is located adjacent to the converter output terminal. AC input terminals of the converter are located on a second side. Each of the distances between the converter output terminals and between the converter output terminal and the external terminal is set to a first formation pitch. Each of the distances between the AC input terminals is set to a second formation pitch. The first formation pitch is set to be equal to the second formation pitch.

Modular power conversion semiconductor device

Power semiconductor device

Among first IGBTs and first MOSFETs, a transistor arranged near a first gate control circuit gives, through a gate thereof, a gate control signal supplied from the first gate control circuit to a gate of a transistor arranged at a position farther from the first gate control circuit. Among second IGBTs and second MOSFETs, a transistor arranged near a second gate control circuit gives, through a gate thereof, a gate control signal supplied from the second gate control circuit to a gate of a transistor arranged at a position farther from the second gate control circuit.

An inverter circuit includes an IGBT () and an IGBT () connected in series between a power supply potential (Vcc) and a GND potential, and an HVIC () and an LVIC () for respectively controlling actuation of the IGBTs () and (). The inverter circuit also includes a capacitor (), a diode (), and a resistor (). The capacitor () is connected between a terminal (VS) and the GND potential. The diode () has a series connection to the capacitor () between the terminal (VS) and the GND potential, with such a polarity that a forward current flows from the GND potential to the terminal (VS). The resistor () is connected in parallel to the capacitor ().

Inverter circuit

A power semiconductor device has first and second power switching elements connected in series, with flywheel diodes, and first and second driver circuits connected to gates of the first and second power switching semiconductor elements. Further, a second diode is connected to a line to be connected to a terminal of at least one of the first and second driver circuits in forward direction such that a current does not flow in the line from the terminal through the second diode. For example, the second diode is connected between a power source terminal of the driver circuit and a controlled power source. In another example, the second diode is connected between an input terminal of the driver circuit and a device for supplying a control signal to the input terminal.

A power semiconductor module has a detector for detecting main circuit current passing through a power semiconductor element. The detector includes first and second circuit patterns; a bonding wire connected at first and second bonding points with the first and second circuit patterns, respectively; and a pair of terminal patterns extended from near the first and second bonding points of the first and second circuit patterns. The detector is designed to detect a potential difference between the pair of terminal patterns generated by flowing main circuit current through the first circuit pattern, the bonding wire and then the second circuit pattern, in order to detect a potential difference across the bonding wire.

Power semiconductor module with detector for detecting main circuit current through power semiconductor element

A comparator compares the voltage of a shunt resistor, detected by a current detection terminal, with a reference voltage and supplies a current abnormality signal to a fault circuit when the voltage of the shunt resistor is in excess of the reference voltage. A stop signal is then supplied to a power device driving circuit and an input circuit. In response to the received stop signal, the power device driving circuit and another power device driving circuit stop operation of transistors respectively. The fault circuit, which is capable of outputting the stop signal through a fault terminal, is also able to receive a stop signal output from another control circuit and supply the stop signal to the power device driving circuit and the input circuit. Thus, the circuitry of an inverter module having a protective function is simplified, and the module is able to be miniaturized.

Semiconductor device

An inverter module includes a plurality of leads arranged according to a ZIP. A lead ( ) serving as a load side output terminal and a lead ( ) serving as a high-potential side control input terminal are bent toward directions opposite to each other. A lead ( ) serving as a low-potential side control input terminal is arranged at a distance four times a terminal pitch from the lead serving as the load side output terminal ( ).

Growing community of inventors

Tokyo, Japan

Toru Iwagami