Hitachi-high-technologies Corporation

Toru Ito

Hiroaki Ishimura

Hitoshi Kobayashi

Hayato Watanabe

Yoshiharu Inoue

Masunori Ishihara

Toshiaki Nishida

Akito Kouchi

The present invention provides a plasma processing method in which sideetching and microloading can be suppressed in a plasma processing method of forming trenches with a mask having a minimum opening width of 20 nm or less. The plasma processing method of the present invention is characterized by including the steps of forming trenches by plasma etching, forming a nitride film on sidewalls of trenches using plasma, and forming an oxide film on sidewalls and bottom surfaces of the trenches using plasma.

Plasma processing method

The invention provides a dry etching method capable of obtaining a good profile with little side etch without receiving the restriction of a micro loading effect. A dry etching method for etching a sample having formed on the surface thereof a pattern with an isolated portion and a dense portion using plasma comprises a first etching step using an etching gas containing a CF-based gas and a nitrogen gas in which an etching rate of a dense portion of the pattern is greater than the etching rate of the isolated portion of the mask pattern, and a second etching step in which the etching rate of the isolated portion of the pattern is greater than the etching rate of the dense portion of the pattern.

Dry etching method

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Kudamatsu, Japan

Toru Ito