Hitachi Power Solutions Co., Ltd.

Toru Itagaki

Hideaki Takemori

Hisashi Aoki

Satoshi Higashiyama

The object of the invention is to provide a double-sided circuit non-oxide-based ceramic substrate excellent in radiation property and low in cost, and a method for manufacturing the same. A double-sided circuit non-oxide-based ceramic substrate related to the present invention includes a high heat-conductive non-oxide-based ceramic substrate that includes a through hole, a holding layer that is formed on a wall surface of the through hole, and an electro-conductive metal section that is held inside the through hole by the holding layer and does not include an active metal. The double-sided circuit non-oxide-based ceramic substrate related to the present invention preferably includes electrodes (thin film electrodes) that shield end surfaces of the holding layer and end surfaces of the electro-conductive metal section which are exposed to front and back surfaces of the ceramic substrate.

Double-sided circuit non-oxide-based ceramic substrate and method for manufacturing same

A single crystal silicon carbide substrate includes a substrate of a single crystal silicon carbide; a first wiring film and a second wiring film disposed on one side of the substrate and having therebetween an interstice which is formed continuously without being broken from a first end of the one side to a second end of the one side; and an insulating portion disposed in the interstice between the first wiring film and the second wiring film and including a surface texture of the one side exposed by removing using dry etching a surface contaminated layer which is contaminated by at least one of iron, aluminum, chromium, or nickel adhered thereto.

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Hitachi, Japan

Toru Itagaki