Sanyo Electric Co., Ltd.

Tokyo Institute of Technology

Research Development Corporation of Japan

Development Corporation of Japan

Toru Ishikawa

Akira Ibaraki

Nobuhiko Hayashi

Yasuyuki Bessho

Masayuki Shono

Daisuke Ide

Mitsuaki Matsumoto

Takenori Goto

Shoji Honda

Koutarou Furusawa

Keiichi Yodoshi

Teruaki Miyake

Takatoshi Ikegami

Kenichi Matsukawa

Atushi Tajiri

Kenichi Iga

Kenji Kawashima

Kotaro Furusawa

Masayuki Fujita

Takeshi Sano

Gaku Harada

To provide a solid electrolytic capacitor having a high capacitance and an excellent heat resistance. A solid electrolytic capacitor includes: an anode; a dielectric layerprovided on the surface of the anode; a first conductive polymer layerprovided on the dielectric layer; a second conductive polymer layerprovided on the first conductive polymer layer; a third conductive polymer layerprovided on the second conductive polymer layer; and a cathode layer provided on the third conductive polymer layer, wherein the first conductive polymer layeris made of a conductive polymer film formed by polymerizing pyrrole or a derivative thereof, the second conductive polymer layeris made of a conductive polymer film formed by polymerizing thiophene or a derivative thereof, and the third conductive polymer layeris made of a conductive polymer film formed by electropolymerizing pyrrole or a derivative thereof.

Solid electrolytic capacitor and fabrication method thereof

A semiconductor laser with a self-sustained pulsation is disclosed in which a first cladding layer of first conductive type, an active layer and a second cladding layer of second conductive type having a striped ridge are formed in that order on a semiconductor substrate of first conductive type. The first and second cladding layers have a refractive index smaller than and a band gap larger than the active layer. A saturable optical absorbing layer having a band gap of energy substantially equal to the energy corresponding to lasing wavelength is formed in both the first and second cladding layers. Further, a barrier layer having a refractive index smaller than and a band gap larger than the first and second cladding layers is formed between the first cladding layer and the active layer and/or between the active layer and the second cladding layer.

Semiconductor laser with a self sustained pulsation

Method of making a semiconductor laser with a self-sustained pulsation

Semiconductor laser with a self-sustained pulsation

A method of manufacturing a surface-emitting-type semiconductor laser device having a buried structure. A GaAlAs film is used as a mask layer in forming a GaAlAs/GaAs system burying part around a GaAlAs/GaAs system buried part. The mask layer can be formed continuously together with an active layer, a cladding layer and the like which constitute the buried part by means of a crystal growing apparatus for forming the buried part. When the system is etched, the GaAlAs film mask prevents the system buried part from becoming undercut so that the mask has better resistance to peeling during subsequent processing.

Method of manufacturing a surface-emitting type semiconductor laser

A surface-emitting-type semiconductor laser device having a buried structure wherein a burying part having a current blocking function is formed around a buried part comprising an active region. A reflecting mirror consisting of a semiconductor multilayer film is installed on the buried part and the burying part, and the Bragg wavelength of this semiconductor multilayer film is set in matching with a longitudinal mode one mode higher than the longitudinal mode of oscillation in pulse operation. This semiconductor multilayer film has a configuration wherein two kinds of GaAlAs layers having different composition ratios of Al are laminated alternately, and the layer thickness of each GaAlAS layer constituting the semiconductor multilayer film is set so as to able to realize the Bragg wavelength calculated theoretically.

Surface-emitting-type semiconductor laser device

Growing community of inventors

Takatsuki, Japan

Toru Ishikawa