Nippon Mining & Metals Co., Ltd.

Jx Nippon Mining Metals Corporation

Nikko Materials Company, Limited

Japan Energy Corporation

Bridgestone Corporation

Osaka University

Nagoya University

Nippon Mining Co., Ltd.

Nara Institute of Science and Technology

Toru Imori

Junnosuke Sekiguchi

Atsushi Yabe

Junichi Ito

Masataka Yahagi

Atsushi Nakamura

Kouichi Takemoto

Yoshiyuki Hisumi

Yasushi Narusawa

Koichi Takemoto

Kouichi Nakamura

Masaomi Murakami

Kazunori Iida

Jun Suzuki

Yoshihisa Fujihira

Toshifumi Kawamura

Yoshihiro Sasaki

Tsukasa Torimoto

Susumu Kuwabata

Masashi Kumagai

Yasuhiro Yamakoshi

Shiro Tsukamoto

Akihiro Aiba

Shinichiro Senda

Akira Noda

Hirofumi Takahashi

Takahiro Uchida

Makoto Mikami

Kouji Murakami

Shinsuke Nakane

Jun-ichi Kikuchi

Hideaki Fukuyo

Osamu Uchino

Yasushi Naitoh

Kanji Fujiki

Seiji Masuda

Takashi Ouchi

Mizuho Yoshida

Ryu Murakami

Takayuki Ninomiya

Kazuhiro Kondoh

Mineo Hashizume

Kouhei Ushikubo

Masatomi Murakami

Kunihiko Hosonuma

Takashi Kinase

Kenichi Okazaki

Provided is a method for manufacturing high purity tin including: depositing electrodeposited tin on the surface of a cathode by electrowinning in an electrolytic bath in which a diaphragm is placed between an anode and the cathode, by using a raw material for tin as the anode and a leachate obtained by electrolytically leaching the raw material for tin in a sulfuric acid solution as an electrolytic solution, the electrolytic solution containing a smoothing agent for improving a surface property of the electrodeposited tin; discharging the electrolytic solution from the electrolytic bath such that lead in the discharged electrolytic solution is removed; and putting the electrolytic solution from which lead is removed back into the electrolytic bath.

Method for manufacturing high purity tin, electrowinning apparatus for high purity tin and high purity tin

Provided is a high purity tin (Sn) having an extremely low oxygen content. A high purity tin having a tin purity of 5N (99.999% by mass, provided that carbon, nitrogen, oxygen and hydrogen are excluded) or more, wherein the high purity tin has an oxygen content of less than 10 ppb by mass, as measured by elemental analysis using Dynamic-SIMS.

High purity tin and method for manufacturing same

Provided is high purity tin having purity of 5N (99.999% by mass), which can suppress generation of particles. According to the high purity tin, the number of particles each having a particle diameter of 0.5 &#x3bc;m or more is 50,000 or less per a gram.

High purity tin and method for producing same

Provided is a high-purity tin product that does not contain undesirable carbonaceous impurities as a result of the following: a vacuum-packed high-purity metal article (vacuum-packed high-purity tin article) is obtained by vacuum packaging a high-purity metal (high-purity tin), at least a portion of a surface of a high-purity metal being covered with a fluorocarbon resin sheet; and the vacuum-packed high-purity metal article(vacuum-packed high-purity tin article) is obtained by vacuum packaging, with a vacuum packaging film, the high-purity metal in which at least a portion of a surface is covered with the fluorocarbon resin sheet.

Method for vacuum packing high-purity tin and vacuum-packed high purity tin

The present invention provides a radiation detector UBM electrode structure body and a radiation detector which suppress the degradation of metal electrode layers at the time of formation of UBM layers and achieve sufficient electric characteristics, and a method of manufacturing the same. A radiation detector UBM electrode structure body according to the present invention includes a substrate made of CdTe or CdZnTe, comprising a Pt or Au electrode layer formed on the substrate by electroless plating, an Ni layer formed on the Pt or Au electrode layer by sputtering, and an Au layer formed on the Ni layer by sputtering.

Radiation detector UBM electrode structure body, radiation detector, and method of manufacturing same

An electroless plating pretreatment agent that can retain stably Pd(II) over a long period of time in an organic solvent, an electroless plating method using the same that is capable of forming an electroless plated film having excellent adhesion, and an electroless plated object. The electroless plating pretreatment agent contains an organic palladium compound and a coordination compound having a functional group with a metal-capturing capability dissolved in an organic solvent, the coordination compound being selected from the group consisting of the imidazole analogs, polyethyleneamines, ethyleneimines and polyethyleneimines.

Electroless plating pretreatment agent, electroless plating method using same, and electroless plated object

A substrate having, on a base material, a barrier film for preventing copper diffusion containing one or more metal elements selected from tungsten, molybdenum and niobium, a metal element having a catalytic function in electroless plating such as platinum, gold, silver and palladium, and nitrogen contained in the form of a nitride of the aforementioned one or more metal elements selected from tungsten, molybdenum and niobium. The barrier film for preventing copper diffusion is manufactured by sputtering in a nitrogen atmosphere using a target containing one or more metal elements selected from tungsten, molybdenum and niobium and the aforementioned metal element having a catalytic function in electroless plating.

Substrate and manufacturing method therefor

A metal-coated material comprising a metal-coated lipid bilayer vesicle and a preparation method thereof are provided. A metal-coated material comprising a metal-coated lipid bilayer vesicle having a network of siloxane bonding (Si&#x2014;O&#x2014;Si) on its surface. a method for preparing the metal-coated lipid bilayer vesicle comprising the following steps:

Metal-coated lipid bilayer vesicles and process for producing same

An electroless copper plating solution that is favorable to improve the adhesion of a plating film and realizes uniform plating at a low temperature is characterized by containing a water-soluble nitrogen-containing polymer in an electroless copper plating solution, and preferably the above-mentioned electroless copper plating solution contains glyoxylic acid and phosphinic acid as reducing agents. The water-soluble nitrogen-containing polymer is preferably a polyacrylamide or a polyethyleneimine and, preferably, its weight average molecular weight (Mw) is at least 100,000 and Mw/Mn is 10.0 or less.

Electroless copper plating solution

A plated article has an alloy thin film formed on a substrate and having a catalytically active metal (A) for electroless plating and a metal (B) capable of undergoing displacement plating with a metal ion contained in an electroless plating solution, and a metal thin film formed on the alloy thin film by electroless displacement and reduction plating. The alloy thin film of the catalytically active metal (A) and the metal (B) capable of displacement plating has a composition comprising 5 at % to 40 at % of the metal (A). The metal thin film formed by electroless displacement and reduction plating is a metal thin film having a thickness no greater than 10 nm and a resistivity no greater than 10 &#x3bc;&#x3a9;&#xb7;cm. Preferably, the metal (B) has a barrier function with respect to a metal of the metal thin film.

Plated article having metal thin film formed by electroless plating

A layer having a barrier function and catalytic power and excelling in formation uniformity and coverage of an ultrathin film, a pretreatment technique making it possible to form an ultrafine wiring and form a thin seed layer of uniform film thickness and a substrate including a thin seed layer formed with a uniform film thickness by electroless plating by using the aforementioned technique. A substrate in which an alloy film of one or more metal elements, having a barrier function and a metal element or metal elements, having catalytic power with respect to electroless plating is formed by chemical vapor deposition (CVD) on a base to a film thickness of 0.5 nm to 5 nm with a content ratio of the one or more metal element having a barrier function from 5 to 90 at. %.

Substrate comprising alloy film of metal element having barrier function and metal element having catalytic power

A ULSI micro-interconnect member having a substrate and a ULSI micro-interconnect formed on the substrate, wherein the ULSI micro-interconnect includes a barrier layer formed on the substrate and a ruthenium electroplating layer formed on the barrier layer; the ULSI micro-interconnect member further including a copper electroplating layer formed using the ruthenium electroplating layer as a seed layer; and a process for fabricating the ULSI micro-interconnect members.

ULSI micro-interconnect member having ruthenium electroplating layer on barrier layer

An object of the present invention is to provide a high-purity aqueous copper sulfonate solution and a simplified method of producing this solution. The aqueous copper sulfonate solution of the present invention is characterized in that the copper concentration therein is at least 90 g/L, the content of metal impurities is less than 10 mg/L as metal for each metal impurity, the content of chlorine is less than 10 mg/L, and the sulfonic acid is a sulfonic acid represented by the following general formulaR&#x2014;(SOH)(in the formula, R represents a lower alkyl group, lower alkylidene group, lower alkylene group, or hydroxyalkyl group and n represents 1 or 2).

High-purity aqueous copper sulfonate solution and method of producing same

A metal nano particle can be supported and immobilized on a substrate uniformly. Thus, disclosed is a method for supporting a nano metal particle, which comprises applying a silane coupling agent having at least one functional group capable of capturing a metal (e.g., an imidazole group, an amino group, a diamino group, a mercapto group, and a vinyl group) in its molecule on a substrate, and then contacting the silane coupling agent with a nano particle of a metal (e.g., gold, platinum, silver, copper, palladium, nickel, cobalt), wherein the silane coupling agent may be produced by the reaction between an azole compound with an epoxysilane compound, and wherein the metal nano particle to be contacted with the silane coupling agent is preferably coated with an ionic fluid. Also disclosed is a substrate having a metal nano particle supported thereon, which is produced by the method.

Method for supporting metal nanoparticles and metal nanoparticles-carrying substrate

Growing community of inventors

Kitaibaraki, Japan

Toru Imori