Mitsubishi Electric Corporation

Toru Ichimura

Tetsujiro Tsunoda

Masanori Yamamoto

Hiroshi Fujita

Toshinari Hirai

A power semiconductor module includes a power semiconductor element; a control circuit which controls the power semiconductor element; and multiple terminals. The control circuit deactivates a gate terminal, which is a control electrode of the power semiconductor element, in an event of a fault in the power semiconductor element or the power semiconductor module, and outputs from a first output terminal a fault signal indicating the event of the fault in the power semiconductor module. When there is no fault in the power semiconductor element and the power semiconductor module, the control circuit uses the first output terminal for other applications such as for outputting temperature information on the power semiconductor module, for example. This allows the fault signal to be output without increasing the number of terminals of the power semiconductor module more than necessary.

Power semiconductor module and power converter

A semiconductor device includes a printed wiring board; a first semiconductor module including a first package body and a first heat radiation surface on one surface of the first package body, another surface of the first package body, opposite to the first heat radiation surface, faces one face of the printed wiring board; a first heat radiator on the first heat radiation surface; a second semiconductor module including a second package body and a second heat radiation surface on one surface of the second package body, another surface of the second package body, opposite to the second heat radiation surface, faces another face of the printed wiring board; and a second heat radiator provided on the second heat radiation surface. The first and second semiconductor modules are arranged to overlap each other in a plan view. The second semiconductor module is connected in parallel to the first semiconductor module.

Semiconductor device

According to the present invention, a semiconductor device includes a first metal plate, a second metal plate provided above the first metal plate, a third metal plate provided above the second metal plate, a first semiconductor chip provided between the first metal plate and the second metal plate, a second semiconductor chip provided between the second metal plate and the third metal plate and a cooling member, wherein the first metal plate has a first cooling portion that is in contact with the cooling member, the second metal plate has a second cooling portion that is in contact with the cooling member, and the third metal plate has a third cooling portion that is in contact with the cooling member.

Provided is a power module having a sufficient space in which a large electronic component in size is disposed, and having yield strength against external stresses, such as vibrations. A power module includes: an insulating substrate; a semiconductor element mounted above the insulating substrate; a sealant sealing the insulating substrate and semiconductor element, and forming the outer shape of the power module; and a pair of terminals disposed on the sealant, in both ends of the sealant in a width direction of the power module in an upright manner. The pair of terminals are spaced from each other by a distance greater than the width of a film capacitor being a first electronic component mounted on the bottom surface of a control substrate being a circuit substrate coupled to tips of the pair of terminals. The pair of terminals are longer in a height direction than the film capacitor.

Growing community of inventors

Tokyo, Japan

Toru Ichimura