Hamamatsu-photonics K.k.

Hamamatsu Photonics Kabushiki Kaisha

Kyushu University

Other

Toru Hirohata

Minoru Niigaki

Masami Yamada

Hirofumi Kan

Kazutoshi Nakajima

Yoshihiko Mizushima

Takashi Iida

Kenichi Sugimoto

Tomoko Suzuki

Katsumi Shibayama

Masashi Ito

Yoshihiro Maruyama

Yoshihisa Warashina

Hiroki Kamei

Tomoko Mochizuki

Tuneo Ihara

Kazuue Fujita

Shigeo Hara

Yasuharu Negi

Takahiko Yamanaka

Akira Higuchi

Chihaya Adachi

Hajime Nakanotani

Hiroyasu Fujiwara

Masaki Hirose

Takafumi Yokino

Takashi Kasahara

Hiroki Oyama

Toshimitsu Kawai

Kazuto Ofuji

Katsuyuki Kinoshita

Anna Yoshida

Kazunori Tanaka

Kuniyoshi Mori

Norio Asakura

Tadataka Edamura

Tatsuo Dougakiuchi

Kimitsugu Nakamura

Yasuyuki Egawa

Tokuaki Nihashi

Koichiro Oba

Tomihiko Kuroyanagi

Yasufumi Takagi

Toshihiro Suzuki

Masamichi Yamanishi

Hideki Suzuki

Takashi Watanabe

Yuta Aoki

Satoru Okawara

Wataru Akahori

Tsuneo Ihara

Wataru Aka-Hori

Minoru Nigaki

Provided is a light-emitting device including an organic light-emitting element and a control unit that controls the organic light-emitting element. The organic light-emitting element includes a first electrode, a second electrode, and an organic light-emitting layer which is disposed between the first electrode and the second electrode and in which separation of charges occurs due to incidence of excited light. The control unit changes a potential difference between the first electrode and the second electrode so that recoupling of the charges occurs, in a second period after passage of a delay period from a first period in which the excited light is incident to the organic light-emitting layer.

Light-emitting device, light-emitting method, and organic light-emitting element

An organic electro-luminescent element having a luminescence peak in a near-infrared range, comprising a positive electrode, a negative electrode, and at least one organic layer including a luminescent layer located between the positive electrode and the negative electrode, wherein the luminescent layer comprises a host material, a delayed fluorescent material and a luminescent material, wherein each of the delayed fluorescent material and the luminescent material have a structure with two or three benzene rings bonded to an N atom.

Organic electro-luminescent element and bioinstrumentation device

An optical semiconductor element includes: an optical waveguide body; a first electrode that is disposed on the second clad layer; a second electrode that is disposed on a second clad layer on one side of the first electrode in a light guiding direction of the optical waveguide body; a third electrode that is disposed on the second clad layer on the other side of the first electrode in the light guiding direction; and at least one fourth electrode that faces the first electrode, the second electrode, and the third electrode with the optical waveguide body interposed therebetween. The optical waveguide body includes a first separation region that electrically separates a first region under the first electrode from a second region under the second electrode and a second separation region that electrically separates the first region under the first electrode and a third region under the third electrode.

Optical semiconductor element and method of driving optical semiconductor element

With a probein which an end of the organic photoelectric-conversion layeron a projection optical pathside is covered by an upper electrodehaving a light-blocking effect, light passing through the projection optical pathfrom a light source can be prevented from directly entering the organic photoelectric-conversion layer

Probe for bioinstrumentation and bioinstrumentation device

An organic EL element having a luminescence peak in a near-infrared range comprises a positive electrode, a negative electrode, and at least one organic layer including a luminescent layer located between the positive electrode and the negative electrode. The luminescent layer comprises a host material, a delayed fluorescent material and a luminescent material. The LUMO and HOMO energy levels of the delayed fluorescent material and the luminescent material, the absorption spectrum of the luminescent material, and the emission spectrum of the delayed fluorescent material satisfy predetermined relationships.

A SERS elementcomprises a substratehaving a front face; a fine structure part, formed on the front face, having a plurality of pillars; a first conductor layerformed on the front faceand fine structure partso as to cover the front faceand fine structure partcontinuously; and a second conductor layerformed on the first conductor layerso as to form a plurality of gaps G, Gfor surface-enhanced Raman scattering; while the first and second conductor layersare constituted by the same material.

Surface-enhanced Raman scattering element, and method for manufacturing surface-enhanced Raman scattering element

A SERS element comprises a substrate; a fine structure part formed on a front face of the substrate and having a plurality of pillars; and a conductor layer formed on the fine structure part and constituting an optical function part for generating surface-enhanced Raman scattering. The conductor layer has a base part formed along the front face of the substrate and a plurality of protrusions protruding from the base part at respective positions corresponding to the pillars. The base part and the protrusions form a plurality of gaps in the conductor layer, each of the gaps having an interstice gradually decreasing in the projecting direction of the pillar.

Surface-enhanced raman scattering element including a conductor layer having a base part and a plurality of protusions

A SERS element comprises a substrate; a fine structure part formed on a front face of the substrate and having a plurality of pillars; and a conductor layer formed on the fine structure part and constituting an optical function part for generating surface-enhanced Raman scattering. The conductor layer has a base part formed along the front face of the substrate and a plurality of protrusions protruding from the base part at respective positions corresponding to the pillars. The base part and the protrusions form a plurality of gaps in the conductor layer, each of the gaps having an interstice gradually decreasing in a direction perpendicular to the projecting direction of the pillar.

Surface-enhanced Raman scattering element including a conductor layer having a base part and a plurality of protusions

A SERS element comprises a substrate having a front face; a fine structure part formed on the front face and having a plurality of pillars; and a conductor layer formed on the fine structure part and constituting an optical function part for generating surface-enhanced Raman scattering. The conductor layer has a base part formed along the front face and a plurality of protrusions protruding from the base part at respective positions corresponding to the pillars. The base part has a thickness greater than the height of the pillars.

Surface-enhanced Raman scattering element, and method for producing same

A SERS element comprises a substrate having a front face; a fine structure part formed on the front face and having a plurality of pillars; and a conductor layer formed on the fine structure part and constituting an optical function part for generating surface-enhanced Raman scattering. The conductor layer has a base part formed along the front face and a plurality of protrusions protruding from the base part at respective positions corresponding to the pillars. The base part is formed with a plurality of grooves surrounding the respective pillars when seen in the projecting direction of the pillars, while an end part of the protrusion is located within the groove corresponding thereto.

Surface-enhanced raman scattering element

A photodetectorA comprises a multilayer structurehaving a first layerconstituted by first metal or first semiconductor, a semiconductor structure layermounted on the first layerand adapted to excite an electron by plasmon resonance, and a second layermounted on the semiconductor structure layerand constituted by second metal or second semiconductor.

Photodetector

A quantum cascade detector includes a semiconductor substrate, and an active layer formed by laminating unit laminate structures each having an absorption region with a first barrier layer to a second well layer and a transport region with a third barrier layer to an n-th well layer. A second absorption well layer has a layer thickness &#xbd; or less of that of a first absorption well layer thickest in one period, and a coupling barrier layer has a layer thickness smaller than that of an exit barrier layer thickest in one period. The unit laminate structure has a detection lower level arising from a ground level in the first well layer, a detection upper level generated by coupling an excitation level in the first well layer and a ground level in the second well layer, and a transport level structure for electrons.

Quantum cascade detector

An optical elementfor transmitting light therethrough along a predetermined direction and modulating the light comprises a structurehaving a first region Rand a second region Rperiodically arranged with respect to the first region Ralong a plane perpendicular to the predetermined direction, the first and second regions R, Rhaving respective refractive indexes different from each other, and properties of transmitting the light therethrough.

Optical element and photodetector

When light is incident to an antenna layer AAof a photocathode AA, light of a specific wavelength included in the incident light couples with surface plasmons in the antenna layer AAwhereupon near-field light is outputted from a through hole AA. The intensity of the output near-field light is proportional to and greater than the intensity of the light of the specific wavelength. The output near-field light has a wavelength that can be absorbed in a photoelectric conversion layer AA. The photoelectric conversion layer AAreceives the near-field light outputted from the through hole AA. A region of the photoelectric conversion layer AAaround the through hole AAabsorbs the near-field light and generates photoelectrons (e) in an amount according to the intensity of the near-field light. The photoelectrons (e) generated in the photoelectric conversion layer AAare outputted to the outside.

Photocathode, electron tube, field assist type photocathode, field assist type photocathode array, and field assist type electron tube

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Hamamatsu, Japan

Toru Hirohata