Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Toru Fukumoto

Masayuki Endo

Bunji Mizuno

Shinichi Yamamoto

Takashi Hirao

Hiromi Ohsaki

Akihisa Yoshida

Kazuyasu Adachi

Junichi Onoue

The commodity recycling method of the present invention includes the steps of: selling or renting a commodity to a first user (step S); collecting the commodity from the first user (step S); estimating a remaining life of the commodity based on information indicating a usage history of the commodity recorded in a recording section provided in the commodity (step S); determining sale terms or lease terms based on the estimated remaining life of the commodity (step S); selling or renting the commodity to a second user in accordance with the sale terms or the lease terms (step S). The recording section records the information indicating the usage history of the commodity in a manner in which it is substantially impossible for a user of the commodity to alter the usage history information.

Television and lifetime estimating method of a television

In a clean room, after conducting a surface treatment on the surface of a semiconductor substrate with 4-trimethylsiloxy-3-penten-2-one, the treated surface of the semiconductor substrate is coated with a chemically amplified resist, thereby forming a first resist film. Then, the first resist film is successively subjected to exposure, PEB and development, thereby forming a first resist pattern of the chemically amplified resist. Next, in the same clean room, after conducting a surface treatment on the surface of the semiconductor substrate with 4-dimethyl-n-hexylsiloxy-3-penten-2-one, the treated surface of the semiconductor substrate is coated with a non-chemically amplified resist, thereby forming a second resist film. Then, the second resist film is successively subjected to the exposure, the PEB and the development, thereby forming a second resist pattern of the non-chemically amplified resist.

Manufacturing method and apparatus for semiconductor device

In a method of manufacturing a semiconductor device having an LDD structure, source gases for generating plural types of impurity ions exhibiting different molecular weights and different projected ranges in a target during impurity implantation are supplied to a plasma space, ionized, accelerated with a voltage, and implanted in a semiconductor region on the target substrate. In the case of manufacturing a top-gate transistor, a gate electrode on the semiconductor region has a sufficient thickness to serve as a mask. In the case of manufacturing a bottom-gate transistor, a mask and a resistor are used. An implantation angle is set to an optimum value as desired. Thereafter, the impurity is activated as desired. Thus, the semiconductor device having the LDD structure is manufactured by a single step of impurity implantation.

Method of manufacturing transistor

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Kyoto, Japan

Toru Fukumoto